Techniques for operating an atomic force microscope, the atomic force microscope comprising a cantilever and configured to image a surface of a sample using a probe tip coupled to the cantilever, the techniques comprising using a controller to perform: obtaining, based on at least one intrinsic parameter of the cantilever, a first quality factor and a first free oscillation amplitude, wherein the cantilever exhibits only one stable oscillation state when oscillating at the first free oscillation amplitude and operating at the first quality factor; and controlling the cantilever to exhibit the only one stable oscillation state by controlling the cantilever to oscillate at a fixed frequency at or near a resonance frequency of the cantilever, oscillate at the first free oscillation amplitude, and operate at the first quality factor.

Techniques for operating an atomic force microscope, the atomic force microscope comprising a cantilever and configured to image a surface of a sample using a probe tip coupled to the cantilever, the techniques comprising using a controller to perform: obtaining, based on at least one intrinsic parameter of the cantilever, a first quality factor and a first free oscillation amplitude, wherein the cantilever exhibits only one stable oscillation state when oscillating at the first free oscillation amplitude and operating at the first quality factor; and controlling the cantilever to exhibit the only one stable oscillation state by controlling the cantilever to oscillate at a fixed frequency at or near a resonance frequency of the cantilever, oscillate at the first free oscillation amplitude, and operate at the first quality factor.

A method for measuring damage (D) of a substrate (1) caused by an electron beam (2). The method comprises using an atomic force microscope (AFM) to provide a measurement (S2) of mechanical and/or chemical material properties (P2) of the substrate (1) at an exposure area (1a) of the electron beam (2). The method further comprises calculating a damage parameter (Sd) indicative for the damage (D) based on the measurement (S2) of the material properties (P2) at the exposure area (1a).

Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.

The disclosure relates to determining information about a target structure formed on a substrate using a lithographic process. In one arrangement, a cantilever probe is provided having a cantilever arm and a probe element. The probe element extends from the cantilever arm towards the target structure. Ultrasonic waves are generated in the cantilever probe. The ultrasonic waves propagate through the probe element into the target structure and reflect back from the target structure into the probe element or into a further probe element extending from the cantilever arm. The reflected ultrasonic waves are detected and used to determine information about the target structure.

A method and system for performing subsurface atomic force microscopy measurements, the system comprising: a signal source for generating an drive signal; a transducer configured to receive the drive signal for converting the drive signal into vibrational waves and coupling said vibrational waves into a stack comprising a sample for interaction with subsurface features within said sample; cantilever tip for contacting the sample for measuring surface displacement resulting from the vibrational waves to determine subsurface features; wherein the system includes a measurement device for measuring a measurement signal returning from the transducer during and/or in between the subsurface atomic force microscopy measurements.

A cantilever (30) for an ultrasound acoustic microscopy device is provided comprising a transmission tip (31) to contact a sample (11) to therewith transmit an ultrasound acoustic signal as an ultrasound acoustic wave into the sample. The cantilever further comprises a reception tip (32) separate from the transmission tip (31) to contact the sample to receive an acoustic signal resulting from reflections of the ultrasound wave from within the sample.

A cantilever (30) for an ultrasound acoustic microscopy device is provided comprising a transmission tip (31) to contact a sample (11) to therewith transmit an ultrasound acoustic signal as an ultrasound acoustic wave into the sample. The cantilever further comprises a reception tip (32) separate from the transmission tip (31) to contact the sample to receive an acoustic signal resulting from reflections of the ultrasound wave from within the sample.

This document is directed at a method of manufacturing a semiconductor element, the method comprising manipulating a surface of a substrate using an atomic force microscope, the atomic force microscope including a probe, the probe including a cantilever and a probe tip, the substrate including at least one or more device features embedded underneath the surface. The method comprises: imaging the embedded device features, and identifying that a position of the probe tip of the atomic force microscope is aligned with the feature; and displacing the probe tip transverse to the surface for exerting a stress for performing the step of surface manipulation, as for example contact holes. Imaging is performed by applying and obtaining an acoustic signal to and from the substrate via the probe tip, including a first and a second signal component at different frequencies. The imaging and surface manipulation are performed using said same probe and probe tip.

Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.