A torsional probe for a metrology instrument includes a cantilever coupled to a support structure via a torsion bar. The cantilever, support structure, and arms of torsion bar have substantially the same thickness. A method of manufacture of the torsion probe, as well as a method of using the torsion probe to measure photothermal induced surface displacement of a sample are also described.

In order to increase the order of a frequency of an AC signal to be applied between a vibration section and a sample to an order at substantially the same level as the order of a vibration frequency of the vibration section in measuring a vibration component of the vibration control section, a vibration component measuring device (2) includes: a vibration section (4); a first AC signal generator (20) configured to generate a first AC signal; a second AC signal generator (44) configured to generate a second AC signal having a frequency which is (a) more than one time and less than two times or (b) more than two times and less than three times as high as a frequency of the first AC signal; a signal applying section (14, 56) configured to apply the second AC signal between the vibration section and a sample (X); a vibration control section (10) configured to cause the vibration section to vibrate; and a measuring section (16, 18, 20, 22, 42, 44, 50) configured to measure a varying component of vibration of the vibration section, the varying component being varied by an interaction between the vibration section and the sample.

In order to increase the order of a frequency of an AC signal to be applied between a vibration section and a sample to an order at substantially the same level as the order of a vibration frequency of the vibration section in measuring a vibration component of the vibration control section, a vibration component measuring device (2) includes: a vibration section (4); a first AC signal generator (20) configured to generate a first AC signal; a second AC signal generator (44) configured to generate a second AC signal having a frequency which is (a) more than one time and less than two times or (b) more than two times and less than three times as high as a frequency of the first AC signal; a signal applying section (14, 56) configured to apply the second AC signal between the vibration section and a sample (X); a vibration control section (10) configured to cause the vibration section to vibrate; and a measuring section (16, 18, 20, 22, 42, 44, 50) configured to measure a varying component of vibration of the vibration section, the varying component being varied by an interaction between the vibration section and the sample.

The document relates to a method of performing subsurface imaging of embedded structures underneath a substrate surface, using an atomic force microscopy system. The system comprises a probe with a probe tip, and a sensor for sensing a position of the probe tip. The method comprises the steps of: positioning the probe tip relative to the substrate: applying a first acoustic input signal to the substrate; applying a second acoustic input signal to the substrate; detecting an output signal from the substrate in response to the first and second acoustic input signal; and analyzing the output signal. The first acoustic input signal comprises a first signal component and a second signal component, the first signal component comprising a frequency below 250 megahertz and the second signal component either including a frequency below 2.5 megahertz or a frequency such as to provide a difference frequency of at most 2.5 megahertz with the first signal component, such as to enable analysis of an induced stress field in the substrate; and wherein the second acoustic input signal comprises a third signal component having a frequency above 1 gigahertz, such that the return signal includes a scattered fraction of the second acoustic input signal scattered from the embedded structures. This enables to perform imaging a various depths in one pass, across a large range of depths.

The document relates to a method of performing subsurface imaging of embedded structures underneath a substrate surface, using an atomic force microscopy system. The system comprises a probe with a probe tip, and a sensor for sensing a position of the probe tip. The method comprises the steps of: positioning the probe tip relative to the substrate: applying a first acoustic input signal to the substrate; applying a second acoustic input signal to the substrate; detecting an output signal from the substrate in response to the first and second acoustic input signal; and analyzing the output signal. The first acoustic input signal comprises a first signal component and a second signal component, the first signal component comprising a frequency below 250 megahertz and the second signal component either including a frequency below 2.5 megahertz or a frequency such as to provide a difference frequency of at most 2.5 megahertz with the first signal component, such as to enable analysis of an induced stress field in the substrate; and wherein the second acoustic input signal comprises a third signal component having a frequency above 1 gigahertz, such that the return signal includes a scattered fraction of the second acoustic input signal scattered from the embedded structures. This enables to perform imaging a various depths in one pass, across a large range of depths.

A system for measuring the absorption of a laser radiation by a sample is provided. The system comprises: •(i) a pulsed laser source, suitable for emitting pulses at a repetition frequency f.sub.l and arranged so as to illuminate the sample; •(ii) an AFM probe arranged so as to be able to be placed in contact with the region of the surface of the sample on one side, the AFM probe having a mechanical resonance mode at a frequency f.sub.m; and •(iii) a detector configured to measure the amplitude of the oscillations of the AFM probe resulting from the absorption of the laser radiation by the region of the surface of the sample, characterized in that it also comprises a translation system designed to displace the sample at a frequency f.sub.p.

Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.

A method for measuring damage (D) of a substrate (1) caused by an electron beam (2). The method comprises using an atomic force microscope (AFM) to provide a measurement (S2) of mechanical and/or chemical material properties (P2) of the substrate (1) at an exposure area (1a) of the electron beam (2). The method further comprises calculating a damage parameter (Sd) indicative for the damage (D) based on the measurement (S2) of the material properties (P2) at the exposure area (1a).

A scanning probe microscope (50) is provided with a probe (20), a cantilever (2) supporting the probe (20), a scanner (43) on which a sample (S) is placed, a drive unit (4) for changing the distance between the sample (S) and the probe (20), and a displacement measurement unit (3) for measuring the displacement of the cantilever (2). The scanning probe microscope (50) is provided with a curve generation unit (11) for generating a first curve representing the relation between the distance between the probe (20) and the sample (S) and the quantity representing the displacement of the cantilever (2) when the sample (S) approaches the probe (20) and a second curve representing the relation between the distance between the probe (20) and the sample (S) when the sample (S) moves away from the probe (20) and the quantity representing the displacement of the cantilever (2), and a physical quantity calculation unit (53) for determining the quantity representing the area between the first curve and the second curve as a physical quantity of the sample.

A scanning probe microscope (50) is provided with a probe (20), a cantilever (2) supporting the probe (20), a scanner (43) on which a sample (S) is placed, a drive unit (4) for changing the distance between the sample (S) and the probe (20), and a displacement measurement unit (3) for measuring the displacement of the cantilever (2). The scanning probe microscope (50) is provided with a curve generation unit (11) for generating a first curve representing the relation between the distance between the probe (20) and the sample (S) and the quantity representing the displacement of the cantilever (2) when the sample (S) approaches the probe (20) and a second curve representing the relation between the distance between the probe (20) and the sample (S) when the sample (S) moves away from the probe (20) and the quantity representing the displacement of the cantilever (2), and a physical quantity calculation unit (53) for determining the quantity representing the area between the first curve and the second curve as a physical quantity of the sample.