Disclosed is a test device for testing a high-frequency and high-speed semiconductor. The test device includes a probe supporting block formed with a tube accommodating portion along a test direction; a conductive shield tube accommodated in the tube accommodating portion; and a probe accommodated and supported in the shield tube without contact, the tube accommodating portion including a conductive contact portion for transmitting a ground signal to the shield tube. When a high-frequency and high-speed semiconductor or the like subject is tested, the test device easily and inexpensively prevents crosstalk between the adjacent signal probes and improves impedance characteristic.

Disclosed is a test device for testing a high-frequency and high-speed semiconductor. The test device includes a probe supporting block formed with a tube accommodating portion along a test direction; a conductive shield tube accommodated in the tube accommodating portion; and a probe accommodated and supported in the shield tube without contact, the tube accommodating portion including a conductive contact portion for transmitting a ground signal to the shield tube. When a high-frequency and high-speed semiconductor or the like subject is tested, the test device easily and inexpensively prevents crosstalk between the adjacent signal probes and improves impedance characteristic.

Feed forward compensation of parasitic capacitance in a device frontend is provided. A feed forward element is positioned along at least a portion of a length of a first input resistance and a distance away from the first input resistance. In some implementations, the feed forward element has a width that is increasing along the at least a portion of the length of the first input resistance. The feed forward element is operative to introduce an element capacitance that offsets a parasitic capacitance in a volume surrounding the first input resistance.

A hermetically RF-EMI shielded 3-axis and planarity adjustable combo link assembly for low loss connection between the coaxial RF connector of external instruments (impedance tuners) with 30- or 45-degrees wafer probes allows continuous, micro-positioner controlled independent horizontal and vertical probe movement. Flexible sealing O-rings and RF absorbing sheets and gaskets ensure airtight and RF-EMI shielded operation.

A hermetically RF-EMI shielded 3-axis and planarity adjustable combo link assembly for low loss connection between the coaxial RF connector of external instruments (impedance tuners) with 30- or 45-degrees wafer probes allows continuous, micro-positioner controlled independent horizontal and vertical probe movement. Flexible sealing O-rings and RF absorbing sheets and gaskets ensure airtight and RF-EMI shielded operation.

A current sensor includes a magnetic sensor configured to detect a magnetic field generated by a current to be measured flowing through a current path and a shielding member including a first shield, a second shield, and a third shield disposed away from each other. The first shield is disposed on an opposite side of the current path from the magnetic sensor in a first direction in which the magnetic sensor and the current path oppose each other and includes a first opposing surface opposing the current path. The second shield includes a second opposing surface along the first direction. The third shield includes a third opposing surface along the first direction. The second shield and the third shield are disposed such that the second opposing surface and the third opposing surface oppose each other, with the magnetic sensor and the current path sandwiched therebetween.

A measuring apparatus for measuring an electrical voltage for a metal-encapsulated switchgear. The measuring apparatus has an electrical conductor, an electrically conductive measuring electrode, which surrounds a first conductor portion of the electrical conductor and is electrically insulated from the electrical conductor, and an electrically conductive field control electrode, which is electrically insulated from the electrical conductor and from the measuring electrode and which has a first field control electrode portion that surrounds the measuring electrode.

Feed forward compensation of parasitic capacitance in a device frontend is provided. A feed forward element is positioned along at least a portion of a length of a first input resistance and a distance away from the first input resistance. In some implementations, the feed forward element has a width that is increasing along the at least a portion of the length of the first input resistance. The feed forward element is operative to introduce an element capacitance that offsets a parasitic capacitance in a volume surrounding the first input resistance.

A current sensor assembly includes a housing; a plurality of shields which are accommodated inside the housing and open toward the top of the housing; a plurality of bus bars to which three-phase current is applied and which are arranged spaced apart from each other so as to go past the plurality of shields, respectively; and a current sensor unit which includes a printed circuit board and a plurality of current sensors disposed on the printed circuit board to measure the current applied to the bus bars. The shields, the bus bars, and the current sensor unit are configured to be accommodated inside the housing, and the current sensors are spaced apart from the bus bars and disposed in the inner spaces of the shields.

A current sensor assembly includes a housing; a plurality of shields which are accommodated inside the housing and open toward the top of the housing; a plurality of bus bars to which three-phase current is applied and which are arranged spaced apart from each other so as to go past the plurality of shields, respectively; and a current sensor unit which includes a printed circuit board and a plurality of current sensors disposed on the printed circuit board to measure the current applied to the bus bars. The shields, the bus bars, and the current sensor unit are configured to be accommodated inside the housing, and the current sensors are spaced apart from the bus bars and disposed in the inner spaces of the shields.