A magnetic core for a current sensor is provided. The magnetic core comprises a first and a second core part, each of which is formed from a stack made up of a plurality of sheet metal layers. The second core part has a first end piece structured such that some of the sheet metal layers are longer and protrude beyond the remaining, shorter sheet metal layers. The first core part has a second end piece which is structured inversely to the first end piece of the second core part. The first core part and the second core part are joined together at a connection point such that the longer sheet metal layers of the first end piece and the second end piece overlap at the connection point, wherein the overlap takes place at a number of interfaces that is at least two less than the number of sheet metal layers.

A magnetic core for a current sensor is provided. The magnetic core comprises a first and a second core part, each of which is formed from a stack made up of a plurality of sheet metal layers. The second core part has a first end piece structured such that some of the sheet metal layers are longer and protrude beyond the remaining, shorter sheet metal layers. The first core part has a second end piece which is structured inversely to the first end piece of the second core part. The first core part and the second core part are joined together at a connection point such that the longer sheet metal layers of the first end piece and the second end piece overlap at the connection point, wherein the overlap takes place at a number of interfaces that is at least two less than the number of sheet metal layers.

A current-measuring transducer device has a current transducer for measuring an electric current along a conduction path. The current transducer has a magnetic field-sensitive element for converting the magnetic field resulting from the current flow along the conduction path into at least one physical variable and a measuring device for measuring the physical variable. The current transducer device has a coil arrangement with at least one coil for simulating the magnetic field resulting from the current flow along the conduction path. There is also described a method for calibrating a corresponding current transducer and a computer program product for performing the calibration method.

A current-measuring transducer device has a current transducer for measuring an electric current along a conduction path. The current transducer has a magnetic field-sensitive element for converting the magnetic field resulting from the current flow along the conduction path into at least one physical variable and a measuring device for measuring the physical variable. The current transducer device has a coil arrangement with at least one coil for simulating the magnetic field resulting from the current flow along the conduction path. There is also described a method for calibrating a corresponding current transducer and a computer program product for performing the calibration method.

A current measurement apparatus includes: a current sensing element generating a signal according to a current to be measured; a current measurement means measuring an amount of the current to be measured from the signal outputted from the current sensing element; a communication unit receiving system information from at least one upper-level controller; a correction amount calculation unit calculating information on an amount of a corrected current based on the amount of the current to be measured and the system information; and a measurement operation unit outputting the information on the amount of the corrected current to the at least one upper-level controller.

A current sensor includes a magnetic detection unit capable of detecting the magnetism, a first magnetic shield and a second magnetic shield. The first magnetic shield includes a first shield section and two second shield sections respectively connected in the vicinity of the two ends thereof. The second magnetic shield includes a third shield section and two fourth shield sections respectively connected in the vicinity of the two ends thereof. Between the first shield section and the third shield section is a conductor placement region, and the magnetic detection unit is positioned between the first shield section and the conductor placement region and is provided at a magnetic field canceling position where the magnetic field in the second direction is substantially zero at non-energized times after a prescribed current has flowed in the conductor, in relationship to the length of the two fourth shield sections along the third direction.

A current sensor circuit package includes a primary conductor having an input portion into which a current flows, an output portion from which the current flows, and an exposed portion, wherein the input and output portions have a reduced area edge. A secondary lead has an elongated portion that is offset with respect to the exposed portion of the secondary lead. A semiconductor die is disposed adjacent to the primary conductor on an insulator portion and at least one magnetic field sensing element is supported by the semiconductor die. A package body enclosing the semiconductor die and a portion of the primary conductor includes a first cutout in a first side edge configured to expose the reduced area edge of the input portion of the primary conductor and a second cutout on a second side edge configured to expose the reduced area edge of the output portion of the primary conductor, wherein the first side edge of the package body is substantially parallel with respect to the second side edge of the package body.

A current sensor is described comprising an integrated circuit for sensing electric currents comprising an active side, the active side comprising at least one sensing element and at least one contact pad and a housing comprising material embedding the integrated circuit arranged for allowing electric connection to the at least two contact pads of the active side of the integrated circuit. The housing comprises at least one conductive via disposed outside the integrated circuit and connected to the at least one contact pad, for distributing signals from the at least one contact pad through the housing away from the active side of the integrated circuit.

A power semiconductor module includes: an electrically insulative frame having opposite mounting sides and a border wall that defines a periphery of the frame; a substrate seated in the frame; power semiconductor dies attached to the substrate; signal pins attached to the substrate and electrically connected to the power semiconductor dies; a busbar attached to the substrate and extending through the border wall; a receptable in the border wall configured to receive a current sensor module and that exposes part of the busbar, the exposed part of the busbar having an opening; and a rotation bar jutting out from a sidewall of the receptable and onto the exposed part of the busbar without obstructing the opening in the busbar, wherein the rotation bar forms an axis of rotation within the receptable. A power electronic assembly that incorporates the power semiconductor module and corresponding method of production are also described.

A magnetic field detection apparatus includes a magnetoresistive effect element and a helical coil. The magnetoresistive effect element includes a magnetoresistive effect film extending in a first axis direction. The helical coil includes a parallel connection including first and second parts extending in a second axis direction inclined with respect to the first axis direction. The first and second parts are adjacent to each other in a third axis direction and coupled to each other in parallel. The helical coil is wound around the magnetoresistive effect element while extending along the third axis direction. The magnetoresistive effect film overlaps the first and second parts in a fourth axis direction orthogonal to the second and third axis directions. The helical coil is configured to be supplied with a current and thereby configured to generate an induction magnetic field to be applied to the magnetoresistive effect film in the third axis direction.