G01R17/105

Magnetic Sensor with Serial Resistor for Asymmetric Sensing Field Range

The present disclosure generally relates to a Wheatstone bridge that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures each have an additional non-TMR resistor as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge is non-zero.

Magnetic Sensor Array with Different RA TMR Film

The present disclosure generally relates to a Wheatstone bridge array that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures have a different resistance area as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge array is non-zero.

Magnetic field sensing apparatus
11061085 · 2021-07-13 · ·

A magnetic field sensing apparatus including a substrate, a plurality of magnetoresistance sensors and a plurality of magnetization direction setting devices is provided. A surface of the substrate includes a plurality of inclined surfaces and a plane surface. The magnetoresistance sensors include a plurality of first magnetoresistance sensors disposed at the inclined surfaces and a plurality of second magnetoresistance sensors disposed at the plane surface. The first magnetoresistance sensors include a first and a third portions and form a first full Wheatstone Bridge. The second magnetoresistance sensors include a second and a fourth portions and form a second full Wheatstone Bridge. The magnetization direction setting devices include a first and a second magnetization direction setting devices. The first magnetization direction setting device is disposed beside and overlaps with the first and the second portions. The second magnetization direction setting device is disposed beside and overlaps with the third and the fourth portions.

WIRE CONNECTION QUALITY MONITORING SYSTEMS
20200400733 · 2020-12-24 · ·

A connection quality system can include a resistance test module, a first line connected to the resistance test module and configured to connect to a wire connection assembly past one or more physical connections of the wire connection assembly, and a second line connected to the resistance test module and configured to connect to the wire connection assembly directly or indirectly on an opposite side of the one or more physical connections of the wire connection assembly such that the first line and the second line are in electrical communication through the wire connection assembly. The resistance test module can be configured to determine if the one or more physical connections are degraded or broken based on a resistance of the wire connection assembly.

Electronic device, method for operating the same, and wireless controllable electronic assembly

An electronic device includes a substrate, a Wheatstone bridge circuit, a power module, and a controller. The Wheatstone bridge circuit includes a first pressure sensing electrode disposed on the substrate. A resistance of the first pressure sensing electrode varies with pressure applied to the first pressure sensing electrode. The first pressure sensing electrode is coil-shaped. The power module is electrically connected to the Wheatstone bridge circuit. The controller is configured to control the power module to provide direct current (DC) to the Wheatstone bridge circuit within a first period of time, and to control the power module to provide alternating current (AC) to the Wheatstone bridge circuit within a second period of time.

METHOD FOR DETERMINING THE RESISTANCE TEMPERATURE CHARACTERISTIC OF A CERAMIC GLOW PLUG

A method is described for determining the resistance temperature characteristic of a ceramic glow plug, wherein the glow plug is heated at a specified power, wherein before the heating it is first determined whether the glow plug is an aged glow plug, and then, if the glow plug has not been detected as an aged glow plug, the glow plug is heated at a first specified power and the resistance value thereby achieved is assigned to a temperature that is anticipated to be the final temperature when heating a factory-outlet glow plug at this first power, or if the glow plug has been detected as an aged glow plug, the glow plug is heated at a reduced power which is smaller than the first power, and the resistance value achieved thereby is assigned to the same temperature that is also anticipated when heating a factory-outlet glow plug at the first power.

MAGNETIC FIELD SENSING APPARATUS
20200300937 · 2020-09-24 · ·

A magnetic field sensing apparatus including a substrate, a plurality of magnetoresistance sensors and a plurality of magnetization direction setting devices is provided. A surface of the substrate includes a plurality of inclined surfaces and a plane surface. The magnetoresistance sensors include a plurality of first magnetoresistance sensors disposed at the inclined surfaces and a plurality of second magnetoresistance sensors disposed at the plane surface. The first magnetoresistance sensors include a first and a third portions and form a first full Wheatstone Bridge. The second magnetoresistance sensors include a second and a fourth portions and form a second full Wheatstone Bridge. The magnetization direction setting devices include a first and a second magnetization direction setting devices. The first magnetization direction setting device is disposed beside and overlaps with the first and the second portions. The second magnetization direction setting device is disposed beside and overlaps with the third and the fourth portions.

Systems and methods for measuring the electrical contact resistance at an interface
10739389 · 2020-08-11 · ·

A method for measuring a contact resistance at an interface of an electrically conductive coating and a cross-ply surface of a composite layer having electrically conductive fibers. The method includes: placing a dielectric coating of a sensing pad in contact with the composite layer or with the electrically conductive coating on the cross-ply surface of the composite layer; electrically connecting first and second input terminals of a comparator to the sensing pad and to one side of a capacitor respectively; electrically connecting another side of the capacitor to a fixed resistance; electrically connecting the fixed resistance to an electrically conductive body inserted in a hole in the composite layer; supplying an alternating current to the electrically conductive body and to the fixed resistance; and outputting a characteristic voltage signal if an amplitude of the input signal at the first input terminal is at least equal to an amplitude of the input signal at the second input terminal.

Detecting device
10718795 · 2020-07-21 · ·

A detecting device includes: a bridge circuit having at least one sensing resistor whose resistance varies according to a physical quantity of a measurement object; a power supply configured to apply a voltage to the bridge circuit; an instrumentation amplifier configured to receive an output voltage of the bridge circuit from high-impedance input terminals, amplify the received output voltage, and output the amplified output voltage; and a physical quantity calculating unit configured to receive the output voltage amplified by the instrumentation amplifier and calculate the physical quantity based on the output voltage. The bridge circuit is connected to the instrumentation amplifier via a connector.

Method and circuit for biasing and readout of resistive sensor structure

A method of biasing and reading-out a passive resistive sensor structure having two excitation nodes and two readout nodes, comprises the steps of: a) determining a first state of a first capacitor corresponding to a first amount of charge biasing the sensor structure such that a biasing current flows through said first capacitor during a first time interval determining a second state of the first capacitor corresponding to a second amount of charge integrating or averaging the readout signal during a second time interval related to the first time interval, thereby obtaining an integrated or averaged readout signal determining the sensor readout signal based on the integrated or averaged readout signal and a change in state of the first capacitor.