The overall performance of a current sense amplifier system may be improved by increasing the common mode rejection of the system. In particular, improved current sense amplifier systems of this disclosure may be configured to use a first ADC path to measure a current flowing through a device, a second ADC path to measure a common mode value, a memory element to store a calibration value, and a summer block to output a voltage proportional to the measured current through the device by correcting a voltage value output by the first ADC path based on the measured common mode value of the second ADC path and the stored calibration value.

A power MOSFET and a sense MOSFET for detecting a current of the power MOSFET are formed in a semiconductor chip, and a source pad and a Kelvin pad are formed of a source electrode for the power MOSFET. The source pad is a pad for outputting the current flowing to the power MOSFET, and the Kelvin pad is a pad for detecting a source potential of the power MOSFET. The source electrode has a slit, and at least a part of the slit is arranged between the source pad and the Kelvin pad when seen in a plan view.

A power MOSFET and a sense MOSFET for detecting a current of the power MOSFET are formed in a semiconductor chip, and a source pad and a Kelvin pad are formed of a source electrode for the power MOSFET. The source pad is a pad for outputting the current flowing to the power MOSFET, and the Kelvin pad is a pad for detecting a source potential of the power MOSFET. The source electrode has a slit, and at least a part of the slit is arranged between the source pad and the Kelvin pad when seen in a plan view.

A power MOSFET and a sense MOSFET for detecting a current of the power MOSFET are formed in a semiconductor chip, and a source pad and a Kelvin pad are formed of a source electrode for the power MOSFET. The source pad is a pad for outputting the current flowing to the power MOSFET, and the Kelvin pad is a pad for detecting a source potential of the power MOSFET. The source electrode has a slit, and at least a part of the slit is arranged between the source pad and the Kelvin pad when seen in a plan view.

A power MOSFET and a sense MOSFET for detecting a current of the power MOSFET are formed in a semiconductor chip, and a source pad and a Kelvin pad are formed of a source electrode for the power MOSFET. The source pad is a pad for outputting the current flowing to the power MOSFET, and the Kelvin pad is a pad for detecting a source potential of the power MOSFET. The source electrode has a slit, and at least a part of the slit is arranged between the source pad and the Kelvin pad when seen in a plan view.

The flexibility of a branch circuit monitor is improved by a signal conditioning unit that outputs a voltage in response to an input voltage and which is configurable to output the same range of output voltages in response to input voltages varying over different ranges.

A current shunt monitor (CSM) circuit for monitoring the current through a sense resistor. An analog circuit provides an analog output signal proportional to the voltage across the sense resistor. A power supply includes a fixed voltage power supply at a first voltage supply level and a floating power supply. The floating power supply operates at a second voltage supply level referenced from the voltage level on a voltage input and a floating ground. The voltage input varies from a voltage level above the first voltage supply level to a voltage level below the first voltage supply level, and the floating power supply provides power to the analog circuit at least when the voltage level of the voltage input is above the first voltage supply level. A crossover circuit switches power from the floating power to the fixed voltage power supply at the first voltage supply level upon detecting the voltage level on the voltage input proximate in value to the first voltage supply level.

A current shunt monitor (CSM) circuit for monitoring the current through a sense resistor. An analog circuit provides an analog output signal proportional to the voltage across the sense resistor. A power supply includes a fixed voltage power supply at a first voltage supply level and a floating power supply. The floating power supply operates at a second voltage supply level referenced from the voltage level on a voltage input and a floating ground. The voltage input varies from a voltage level above the first voltage supply level to a voltage level below the first voltage supply level, and the floating power supply provides power to the analog circuit at least when the voltage level of the voltage input is above the first voltage supply level. A crossover circuit switches power from the floating power to the fixed voltage power supply at the first voltage supply level upon detecting the voltage level on the voltage input proximate in value to the first voltage supply level.

A test system for testing devices is disclosed. The test system includes a scanning microscope module and a test module. The scanning microscope module, when testing a device under test (DUT), is configured to perturb the DUT with a laser at a test (pixel) location. The test module includes a tester unit, a reference failure log containing prior failing compare vectors of interest, and a comparator unit which includes a software comparator. The tester unit is configured to perform a test run at the test location of the DUT with a test pattern. If the test run fails testing, the tester unit is configured to compare using the comparator unit to determine if failing test vectors of the test run matches a desired failure signature, and to generate a comparator trigger pulse if failing test vectors match the prior failure signature. The trigger pulse indicates that the test location of the DUT is a failed location.

A charge measuring device detects focused ion beam attacks on an integrated semiconductor circuit with a capacitor, a field effect transistor, and a charge collecting device all manufactured in the integrated semiconductor circuit and insulated from additional circuit elements. A first pole of the capacitor is conductively connected to the charge collecting device and a gate of the field effect transistor. When a voltage is applied to the second pole of the capacitor, a drain source current flows through the field effect transistor, and a relationship between the voltage and the drain source current is ascertained. A comparison of the relationship with a previously ascertained relationship indicates a change of the charge quantity stored in the capacitor by the charge collecting device.