G01R17/16

SEMICONDUCTOR CIRCUITS, DEVICES AND METHODS

A high-voltage sensing device providing full galvanic isolation between a high-voltage domain and a low-voltage domain, wherein the circuit topology of the device resembles that of a Wheatstone bridge, the Wheatstone bridge employing at least one voltage-controlled semiconductor resistor, wherein the circuit also comprises a reference source connected directly to the Wheatstone bridge and the device comprises a number of shielding structures to electrically isolate the high-voltage domain from the low-voltage domain.

SEMICONDUCTOR CIRCUITS, DEVICES AND METHODS

A high-voltage sensing device providing full galvanic isolation between a high-voltage domain and a low-voltage domain, wherein the circuit topology of the device resembles that of a Wheatstone bridge, the Wheatstone bridge employing at least one voltage-controlled semiconductor resistor, wherein the circuit also comprises a reference source connected directly to the Wheatstone bridge and the device comprises a number of shielding structures to electrically isolate the high-voltage domain from the low-voltage domain.

SENSOR FOR VEHICLE, SENSING METHOD THEREOF AND VEHICLE SYSTEM
20180022320 · 2018-01-25 ·

According to one embodiment, there is provided a sensor for a vehicle, which includes: a vehicle glass; a substrate disposed on the vehicle glass; a transparent sensing electrode disposed on the substrate; and a wire electrode connected to the sensing electrode, wherein the sensing electrode comprises a first sensing electrode and a second sensing electrode spaced apart from the first sensing electrode.

System and method for current measurement in the presence of high common mode voltages

A system and method for making accurate current measurements by determining the differential voltage drop across a resistor in series with the load in the presence of large common mode voltages. A compensating voltage equal in magnitude but 180 degrees out of phase with a common mode voltage is generated and applied to a network of resistors connected to a measurement amplifier, thereby significantly reducing the magnitude of the common mode voltage at the measurement amplifier's inputs. An error correction voltage is generated and applied to the output of the measurement amplifier to compensate for errors in the values of the resistor network.

System and method for current measurement in the presence of high common mode voltages

A system and method for making accurate current measurements by determining the differential voltage drop across a resistor in series with the load in the presence of large common mode voltages. A compensating voltage equal in magnitude but 180 degrees out of phase with a common mode voltage is generated and applied to a network of resistors connected to a measurement amplifier, thereby significantly reducing the magnitude of the common mode voltage at the measurement amplifier's inputs. An error correction voltage is generated and applied to the output of the measurement amplifier to compensate for errors in the values of the resistor network.

CURRENT SENSING CIRCUIT AND METHOD
20170192040 · 2017-07-06 ·

The present application relates to a circuit arrangement for sensing a current. The circuit arrangement comprises a current sense circuit configured to cause the sense current through a sense transistor, wherein the sense current is representative of a load current through a load transistor. The current sense circuit comprises a differential difference amplifier with a first differential input terminal pair coupled across the drain electrode and the source electrode of the load transistor and a second differential input terminal pair coupled across the drain electrode and the source electrode of the sense transistor. The current sense circuit is operable to force the same voltage difference value across the drain electrode and the source electrode of the load transistor as across the drain electrode and the source electrode of the sense transistor.

CURRENT SENSING CIRCUIT AND METHOD
20170192040 · 2017-07-06 ·

The present application relates to a circuit arrangement for sensing a current. The circuit arrangement comprises a current sense circuit configured to cause the sense current through a sense transistor, wherein the sense current is representative of a load current through a load transistor. The current sense circuit comprises a differential difference amplifier with a first differential input terminal pair coupled across the drain electrode and the source electrode of the load transistor and a second differential input terminal pair coupled across the drain electrode and the source electrode of the sense transistor. The current sense circuit is operable to force the same voltage difference value across the drain electrode and the source electrode of the load transistor as across the drain electrode and the source electrode of the sense transistor.

Methods and apparatus to detect a conductive object

A method and apparatus scan a first capacitive sensor element that is located in a first scan region for a presence of a conductive object and then scan a second capacitive sensor element that is located in a second scan region for the presence of the conductive object. The scan of the first capacitive sensor element includes applying a ground voltage to a ground element through the second capacitive sensor element, the ground element located in the first scan region.

Methods and apparatus to detect a conductive object

A method and apparatus scan a first capacitive sensor element that is located in a first scan region for a presence of a conductive object and then scan a second capacitive sensor element that is located in a second scan region for the presence of the conductive object. The scan of the first capacitive sensor element includes applying a ground voltage to a ground element through the second capacitive sensor element, the ground element located in the first scan region.

SEMICONDUCTOR DEVICE
20170089957 · 2017-03-30 ·

A power MOSFET and a sense MOSFET for detecting a current of the power MOSFET are formed in a semiconductor chip, and a source pad and a Kelvin pad are formed of a source electrode for the power MOSFET. The source pad is a pad for outputting the current flowing to the power MOSFET, and the Kelvin pad is a pad for detecting a source potential of the power MOSFET. The source electrode has a slit, and at least a part of the slit is arranged between the source pad and the Kelvin pad when seen in a plan view.