A dielectric barrier discharge ionization detector capable of achieving a high signal-to-noise ratio is provided. The detector includes: a discharging section for generating plasma from argon-containing gas by electric discharge; and a charge-collecting section for ionizing a component in a sample gas by an effect of the plasma and for detecting ion current formed by the ionized component. The discharging section includes a cylindrical dielectric tube having a high-voltage electrode connected to AC power source as well as upstream-side and downstream-side ground electrodes and formed on its outer circumferential wall. A semiconductor film is formed on the inner circumferential surface of the tube. The upstream-side and downstream-side ground electrodes are respectively made longer than the initiation distances for a creeping discharge between the high-voltage electrode and a tube-line tip member as well as between the high-voltage electrode and the charge-collecting section.

The dielectric barrier discharge ionization detector includes: a dielectric tube through which a plasma generation gas is passed; a high-voltage electrode formed on the outer wall of the dielectric tube; two ground electrodes and formed on the outer wall of the dielectric tube, with the high-voltage electrode in between; a voltage supplier for applying AC voltage between the high-voltage electrode and each ground electrode to generate electric discharge within the dielectric tube and thereby generate plasma from the plasma generation gas; and a charge-collecting section for detecting an ion current formed by ionized sample-component gas produced by the plasma. The distance between one ground electrode and the high-voltage electrode is longer than a discharge initiation distance between these two electrodes, while the distance between the other ground electrode and the high-voltage electrode is shorter than the discharge initiation distance between these two electrodes.

Embodiments disclosed herein include a processing tool. In an embodiment, the processing tool comprises a power supply, an impedance matching network coupled to the power supply, a cathode, wherein the power supply is configured to supply power through the impedance matching network to the cathode, and a processing module, wherein the processing module is communicatively coupled to the power supply and the impedance matching network.

A device for measuring very low current closes to femto Ampere using an integration, includes a first operational amplifier connected as an integrator, and a second operational amplifier connected as an original current generator which can compensate for leakage current in the circuit measurement state and reset the QO charge of the integration capacitor in the reset state.

A closed and open contact method to predict a usable life of vacuum interrupters in the field can include using computer instructions in the data storage to instruct the processor to position a calculated amp or calculated pressure on an ionic or current versus pressure calibration curve for the installed vacuum interrupter and identify trend data from a library of trend data corresponding to the installed vacuum interrupter and to the calculated pressure or calculated amp of the installed vacuum interrupter; thereby determining the anticipated life expectancy.

A wide dynamic range trans-impedance amplifier includes a first trans-impedance amplifier configured to receive a first input current and produce a first voltage as a function of the first input current, and a second trans-impedance amplifier configured to receive a second input current and produce a second voltage as a function of the second input current. A current steering element causes a first portion of current from a current source to flow to the first trans-impedance amplifier until the first current portion reaches the first threshold current, and causes a second portion of current from the current source to flow to the second trans-impedance amplifier, until the second current portion reaches the second threshold current. The second current portion is current from the current source that exceeds the first threshold current. The wide dynamic range trans-impedance amplifier may receive, for example, ion collector current from a hot cathode ionization gauge (HCIG).

Each of multiple plasma processing chambers has an RF power input line connected to receive RF power from a common RF power source. An RF control module is connected to distribute RF power from the common RF power source to the RF power input lines of the multiple chambers. A voltage sensor and a current sensor are connected to a corresponding RF power input line. Each voltage sensor measures an instantaneous electrical voltage present on its RF power input line. Each current sensor measures an instantaneous electrical current present on its RF power input line. An analog multiplier module is connected to receive as inputs the instantaneous electrical voltage from its corresponding voltage sensor and the instantaneous electrical current from its corresponding current sensor. Each analog multiplier module generates an output signal that indicates an instantaneous RF power present on the corresponding RF power input line of the corresponding chamber.

Embodiments of systems, devices, and methods relating to a beam system. An example method of detecting beam misalignment a beam system includes detecting beam misalignment in an injector system of the beam system. The example method further includes detecting beam misalignment in an accelerator system of the beam system.

Embodiments disclosed herein include a processing tool. In an embodiment, the processing tool comprises a power supply, an impedance matching network coupled to the power supply, a cathode, wherein the power supply is configured to supply power through the impedance matching network to the cathode, and a processing module, wherein the processing module is communicatively coupled to the power supply and the impedance matching network.

Systems and methods for determining wafer bias are described. One of the methods includes detecting output of a generator to identify a generator output complex voltage and current (V&I). The generator is coupled to an impedance matching circuit and the impedance matching circuit is coupled to an electrostatic chuck (ESC). The method further includes determining from the generator output complex V&I a projected complex V&I at a point along a path between an output of a model of the impedance matching circuit and a model of the ESC. The operation of determining of the projected complex V&I is performed using a model for at least part of the path. The method includes applying the projected complex V&I as an input to a function to map the projected complex V&I to a wafer bias value at the ESC model.