A Fast Faraday cup includes a group of electrodes including a ground electrode having a through hole and a collector electrode configured with a blind hole that functions a collector hole. The electrodes are configured to allow a beam (e.g., a non-relativistic beam) to fall onto the ground electrode so that the through hole cuts a beamlet that flies into the collector hole and facilitates measurement of the longitudinal distribution of particle charge density in the beam. The diameters, depths, spacing and alignment of the collector hole and the through hole are controllable to enable the Fast Faraday day cup to operate with a fast response time (e.g., fine time resolution) and capture secondary particles.

An apparatus and method for measuring flux, current, or integrated charge of a beam are provided. The apparatus and method include a cup on which the beam is incident. The cup includes an inner cylinder, a coaxial cylinder, and an aperture. The coaxial cylinder surrounds the inner cylinder and is electrically insulated therefrom. An offset current source is in electrical communication with the inner cylinder. An electrometer, a charge integrator, or a counter may be electrically connected to the cup and the offset current source. When the beam is incident on the cup and aligned with the aperture, the electrometer can measure the beam current and the charge integrator can measure the integrated charge of the beam.

Computed tomographic method and apparatus includes an electron or ion beam having a beam axis, a refractory metal disk; at least one slit in the refractory metal disk that receive the beam, wherein the slit is at an angle to the beam axis; a beam entrance opening in the slit that allows the beam to enter; an effective beam exit opening in the slit that allow the beam to exit, wherein the beam effective exit opening is smaller than the beam entrance opening; and a system for moving the beam across the refractory metal disk, wherein the beam enters the slit through the beam entrance opening and exits the slit through the effective beam exit opening; and a computed tomographic device for measuring the beam that enters and exits the slit for analyzing the beam.

An apparatus for measuring ion beam current values without disturbing the state of ionization of an ion source includes a high-voltage circuit for applying a voltage between an anode and at least one cathode of an ion source based on a voltage condition and supplying its output current to the anode; a gas flow rate adjusting mechanism for adjusting the flow rate of a gas being an ion source material for generating ions and to be admitted into the ion source; a memory in which there is stored information representing a relationship between the flow rate of the gas and the value of an extraction current flowing through an extraction electrode; and an arithmetic processor for finding the extraction current corresponding to the flow rate of the gas based on the information stored in the memory and subtracting the value of the extraction current from the value of the output current supplied to the anode by the high-voltage circuit to compute the electrical current value of the ion beam.

An ion detector that is installed in an ion generator, the ion detector includes: a detection unit configured to acquire a first detected signal corresponding to a change in an electric field caused by an electric discharge of the ion generator; and a frequency filtering circuit configured to perform frequency filtering on the first detected signal to output a post-filtering first detected signal, wherein the frequency filtering circuit comprises at least one band-pass filter and at least one band-elimination filter, the at least one band-elimination filter having a frequency characteristic different from a frequency characteristic of the at least one band-pass filter.

A system for voltage measurement of dielectric material in plasma includes a vacuum chamber. The system also includes an electrostatic receiver located outside of the vacuum chamber. The system also includes a conductive probe having a first terminus in contact with the dielectric material in the vacuum chamber and a second terminus in electrical communication with the electrostatic receiver. The system also includes a non-contact electrostatic voltmeter configured to measure a floating potential of the electrostatic receiver that corresponds to a dielectric potential of the dielectric material at a location in contact with the first terminus of the conductive probe.

An amplification device including: a switch including an output that is suitable for being connected to a first or a second input; a first branch that is connected to the first input, which applies a first gain to generate a first amplified signal; a second branch that is connected to the second input, which applies a second gain to generate a second amplified signal; a controller for controlling the switching of the switch to apply the first or the second amplified signal to the output, depending on whether or not the value of a predetermined quantity of the first amplified signal falls within a predetermined range. The first gain and the second gain being non-zero real numbers of opposite sign.

Computed tomographic method and apparatus includes an electron or ion beam having a beam axis, a refractory metal disk; at least one slit in the refractory metal disk that receive the beam, wherein the slit is at an angle to the beam axis; a beam entrance opening in the slit that allows the beam to enter; an effective beam exit opening in the slit that allow the beam to exit, wherein the beam effective exit opening is smaller than the beam entrance opening; and a system for moving the beam across the refractory metal disk, wherein the beam enters the slit through the beam entrance opening and exits the slit through the effective beam exit opening; and a computed tomographic device for measuring the beam that enters and exits the slit for analyzing the beam.

A voltage sensor for a substrate processing system is provided. The voltage sensor includes a terminal, a first channel, and a second channel. The terminal connects to a pickup device of a substrate support in the substrate processing system. The first channel is configured to detect, at the pickup device, first radio frequency voltages in a first voltage range. The first channel includes a first voltage divider. The first voltage divider is connected to the terminal and is configured to output a first reduced voltage representative of a detected one of the first radio frequency voltages. The second channel is configured to detect, at the pickup device, second radio frequency voltages in a second voltage range. The second channel includes a second voltage divider. The second voltage divider is connected to the terminal and is configured to output a second reduced voltage representative of a detected one of the second radio frequency voltages. The second voltage range is different than the first voltage range.

A sensing device for measuring a plasma process parameter in a plasma chamber for processing workpieces may include a substrate with one or more sensor embedded in the substrate. The substrate can have a surface made of substantially the same material as workpieces that are plasma processed in the plasma chamber. Each sensor can include a collector portion made of substantially the same material as the substrate surface. The collector portion includes a surface that is level with the surface of the substrate. The collector portion is the top surface of the substrate. Sensor electronics are embedded into the substrate and coupled to the collector portion. When the substrate surface is exposed to a plasma one or more signals resulting from the plasma can be measured with the sensor(s).