The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event. The two conductive structures have facing surfaces that have different shapes;

A current detection circuit includes an N-type first transistor configured to supply a first current to an output terminal, an N-type second transistor that constitutes a current mirror circuit with the first transistor, a comparison circuit configured to output a detection result showing whether or not the first current is larger than a predetermined threshold based on a current flowing through the second transistor, a ground fault detection circuit configured to output a result detecting a ground fault of the output terminal, and a logical circuit configured to output a current detection signal showing whether or not the first current is an overcurrent based on the detection result of the comparison circuit and the ground fault detection result of the ground fault detection circuit.

This application discloses a voltage monitoring method, a voltage monitoring apparatus, and an electric vehicle. The voltage monitoring apparatus includes a power conversion module and a microcontroller electrically connected to the power conversion module. The power conversion module is configured to output a voltage. The microcontroller includes an ADC module, a monitoring module, and an IO module. The ADC module is configured to obtain an output voltage of the power conversion module, and determine whether the output voltage encounters an exception. The monitoring module is configured to: when the output voltage encounters an exception, output a control signal through the IO module. The power conversion module correspondingly stops outputting a voltage based on the control signal. Based on this, diagnostic coverage of the power conversion module can reach 99% for a single-point fault metric, thereby meeting a requirement of a corresponding level of ASIL D.

The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, a device configured to monitor electrical overstress (EOS) events includes a pair of spaced conductive structures configured to electrically arc in response to an EOS event, wherein the spaced conductive structures are formed of a material and have a shape such that arcing causes a detectable change in shape of the spaced conductive structures, and wherein the device is configured such that the change in shape of the spaced conductive structures is detectable to serve as an EOS monitor.

A circuit for measurement of a voltage comprises a passive sensing element configured to be coupled between a measurement point and a reference point. The passive sensing element has a voltage-dependent impedance. Further, the circuit comprises an impedance detector and a reference circuit. The impedance detector is configured to detect the impedance of the passive sensing element by providing a probe signal to the passive sensing element and evaluating a response to the probe signal from the passive sensing element and a reference response from the reference circuit. Further, the circuit comprises a converter circuit configured to convert a result of evaluating the response and the reference response to a voltage level information.

Circuit test devices and methods are provided. The method includes measuring a voltage between first and second conductor points (CPs) of a circuit under test (CUT), and determining if the measured voltage is less than a low voltage threshold value (LVTV) indicative of electrical continuity (EC) between the first and second CPs. In response to determining that the measured voltage is less than the LVTV, the method includes: transmitting a test signal (TS) to the first or second CP, and determining if the test signal is received after being transmitted. In response to determining that the TS is received, a presence of EC between the first and second conductor points is reported, and in response to determining that the TS is not received, absence of EC between the first and second CPs, or a lack of electrical contact between the VMC and the first and/or second CP(s), is reported.

A current sensor assembly can include: a coil structure having a first coil and a second coil connected in series, the coil structure configured to generate a differential magnetic field responsive to an electrical current passing through the first and second coils; a first magnetic field sensing element disposed proximate to the first coil and operable to generate a first signal responsive to the differential magnetic field passing through the first magnetic field sensing element in a first direction; a second magnetic field sensing element disposed proximate to the second coil and operable to generate a second signal responsive to the differential magnetic field passing through the second magnetic field sensing element in a second direction; and a circuit operable to subtract the first and second signals to generate a differential signal proportional to the electrical current.

This application provides a current measurement circuit including: an amplification unit, configured to amplify an electrical signal from the sensor unit; a comparison unit, configured to obtain an initial pulse signal based on a voltage signal output by the amplification unit and a preset voltage; a delay unit, electrically connected to the comparison unit and configured to delay an output of the initial pulse signal to obtain a target pulse signal; a resistance unit, wherein two terminals of the resistance unit are electrically connected to an input terminal of the amplification unit and an output terminal of the delay unit respectively, and the resistance unit is configured to charge and discharge the amplification unit based on the target pulse signal; and a calculation unit, electrically connected to the delay unit and configured to calculate a target current based on the target pulse signal output by the delay unit.

This application provides a current measurement circuit including: an amplification unit, configured to amplify an electrical signal from the sensor unit; a comparison unit, configured to obtain an initial pulse signal based on a voltage signal output by the amplification unit and a preset voltage; a delay unit, electrically connected to the comparison unit and configured to delay an output of the initial pulse signal to obtain a target pulse signal; a resistance unit, wherein two terminals of the resistance unit are electrically connected to an input terminal of the amplification unit and an output terminal of the delay unit respectively, and the resistance unit is configured to charge and discharge the amplification unit based on the target pulse signal; and a calculation unit, electrically connected to the delay unit and configured to calculate a target current based on the target pulse signal output by the delay unit.

The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event. The two conductive structures have facing surfaces that have different shapes;