In an embodiment, a method includes filtering, with a low-pass filter, a voltage signal (V.sub.dd) of a chip to create a filtered signal (V.sub.ref). The method further includes dividing V.sub.ref by a given factor. The method further includes determining whether a voltage droop occurred in V.sub.dd by comparing V.sub.dd to the divided V.sub.ref. The method further includes outputting a droop detection signal if V.sub.dd is less than the divided V.sub.ref. In an embodiment, dividing V.sub.ref by the given factor includes selecting, with a multiplexer, one of a plurality of divided V.sub.ref signals outputted by a voltage divider. The selecting is based on a selection signal.

During normal operation of a processor, voltage droop is likely to occur and there is, therefore, a need for techniques for rapidly and accurately detecting this droop so as to reduce the probability of circuit timing failures. The droop detector described herein uses a tap sampled delay line in which a clock signal is split along two separate paths. Each of the taps in the paths are separated by two inverter delays such that the set of samples produced represent sample values of the clock signal that are each separated by a single inverter delay without inversion of the first clock signal between the samples.

Devices, methods, systems, and computer-readable media for a dynamic temperature sensor are described herein. One or more embodiments include a device, comprising: a controller that includes a variable voltage output coupled to a sensor, wherein the controller provides a voltage segment to the sensor based on a signal of the sensor received at the controller.

The present invention provides a voltage monitoring apparatus capable of stable operation even in a low-voltage region. The voltage monitoring apparatus (1) includes: an inner voltage generating portion (40), lowering an input voltage (VIN) to generate an inner voltage (Vreg); an input voltage monitoring portion (30), receiving a power supply from an output terminal of the inner voltage generating portion (40) to operate; a switch portion (50), disposed between an input terminal of the input voltage (VIN) and the output terminal of the inner voltage generating portion (40); and a switch driving portion (60), turning on the switch portion (50) when the input voltage (VIN) is lower than a threshold voltage (for example, Vy<Vref), and turning off the switch portion (50) when the input voltage (VIN) is higher than the threshold voltage (for example, Vy>Vref). Furthermore, the threshold voltage is preferably set as, for example, turning off the switch portion (50) upon the inner voltage generating portion (40) changing to a state capable of outputting the inner voltage (Vreg) that is at least higher than a minimum operating voltage of the input voltage monitoring portion (30).

The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event. The two conductive structures have facing surfaces that have different shapes.

A voltage detector includes a first voltage detection circuit, a second voltage detection circuit, and a voltage divider circuit having a first node for providing a first divided voltage, and a second node for providing a second divided voltage. The second voltage detection circuit has a comparator circuit including a first input end connected to the first node and a second input end connected to a reference voltage. The first voltage detection circuit has a first NMOS transistor including a gate to which the second divided voltage is applied, and a constant current source with one end connected to the first NMOS transistor. The first NMOS transistor is configured to turn on in response to the second divided voltage being higher than a second threshold voltage and turn off in response to the second divided voltage being lower than the second threshold voltage.

During normal operation of a processor, voltage droop is likely to occur and there is, therefore, a need for techniques for rapidly and accurately detecting this droop so as to reduce the probability of circuit timing failures. The droop detector described herein uses a tap sampled delay line in which a clock signal is split along two separate paths. Each of the taps in the paths are separated by two inverter delays such that the set of samples produced represent sample values of the clock signal that are each separated by a single inverter delay without inversion of the first clock signal between the samples.

Circuit test devices and methods are provided. The method includes measuring a voltage between first and second conductor points (CPs) of a circuit under test (CUT), and determining if the measured voltage is less than a low voltage threshold value (LVTV) indicative of electrical continuity (EC) between the first and second CPs. In response to determining that the measured voltage is less than the LVTV, the method includes: transmitting a test signal (TS) to the first or second CP, and determining if the test signal is received after being transmitted. In response to determining that the TS is received, a presence of EC between the first and second conductor points is reported, and in response to determining that the TS is not received, absence of EC between the first and second CPs, or a lack of electrical contact between the VMC and the first and/or second CP(s), is reported.

A pair of clamping parts clamp a conductor to be measured and biased in closing directions. A pair of gripping parts are provided to be able to change a distance between the respective clamping parts according to a distance therebetween. Magnetoelectric conversion element(s) for current measurement is/are provided on either one or both of the respective clamping parts. A distance measurement unit is provided to be able to measure a physical quantity corresponding to the distance between the respective gripping parts as a physical quantity corresponding to the distance between the respective clamping parts. A current calculation device is provided to obtain a current flowing in the conductor to be measured on the basis of a magnetic field detected by the magnetoelectric conversion element(s) for current measurement and the physical quantity measured by the distance measurement unit when the conductor to be measured is clamped by the respective clamping parts.

A voltage detector detects a voltage of a positive electrode of a battery, and outputs a detection value indicating a detected voltage value. A target voltage to be detected is applied to one end of a resistor, via a first switch. A current is input to an output circuit from the other end of the resistor. The output circuit outputs a current whose current value substantively coincides with the current value of the current input from the resistor to one end of a resistor, while maintaining a voltage value of the other end of the resistor substantively at a predetermined voltage value. A voltage value of the one end of the resistor is output to a microcomputer as the detection value.