An on-chip power sensor and a millimeter-wave communication device (e.g. transmitter or transceiver) on a chip including the on-chip power sensor are described. The millimeter-wave communication device can also include a coupler disposed on a transmit path, the coupler being configured to receive a transmit signal and to provide the transmit signal to an antenna connection (e.g. pad). The on-chip power sensor can be configured to receive a coupled portion of the transmit signal from the coupler, and measure a transmit power of the transmit signal based on the coupled portion of the transmit signal.

An on-chip power sensor and a millimeter-wave transmitter on a chip including the on-chip power sensor are described. The millimeter-wave transmitter can also include a coupler disposed on a transmit path, the coupler being configured to receive a transmit signal and to provide the transmit signal to an antenna. The on-chip power sensor can be configured to receive a coupled portion of the transmit signal from the coupler, and measure a transmit power of the transmit signal based on the coupled portion of the transmit signal.

An on-chip power sensor and a millimeter-wave transmitter on a chip including the on-chip power sensor are described. The millimeter-wave transmitter can also include a coupler disposed on a transmit path, the coupler being configured to receive a transmit signal and to provide the transmit signal to an antenna. The on-chip power sensor can be configured to receive a coupled portion of the transmit signal from the coupler, and measure a transmit power of the transmit signal based on the coupled portion of the transmit signal.

A device includes an output circuit that includes an input port at which a signal is received, an output port at which an impedance-adjusted representation of the signal is provided, and a set of bond wires connecting the input and output ports. The device further includes first and second couplers, each including a respective coupling bond wire along the set of bond wires for inductive coupling with the set of bond wires. The first coupler is oriented relative to the distributed-element output circuit to measure forward power provided by the impedance-adjusted representation of the signal via the output port. The second coupler is oriented relative to the output circuit to measure reflected power received via the output port.

A device includes an output circuit that includes an input port at which a signal is received, an output port at which an impedance-adjusted representation of the signal is provided, and a set of bond wires connecting the input and output ports. The device further includes first and second couplers, each including a respective coupling bond wire along the set of bond wires for inductive coupling with the set of bond wires. The first coupler is oriented relative to the distributed-element output circuit to measure forward power provided by the impedance-adjusted representation of the signal via the output port. The second coupler is oriented relative to the output circuit to measure reflected power received via the output port.

An apparatus includes a first directional coupler, a second directional coupler, a first detector, and a second detector. A through port of the first directional coupler is coupled to a through port of the second directional coupler. An isolated port of the first directional coupler is coupled to an isolated port of the second directional coupler. A coupled port of the first directional coupler is coupled to the first detector. A coupled port of the second directional coupler is coupled to the second detector. A detected power signal is generated by combining an output of the first detector and an output of the second detector.

A direction detecting device according to an exemplary embodiment of the present invention includes; a structure having at least two through-holes passing through an upper surface and a lower surface thereof; and at least two electrode units inserted into the at least two through-holes and each including a dielectric layer, a first electrode layer disposed on an upper surface of the dielectric layer and exposed at the upper surface of the structure, and a second electrode layer disposed on a lower surface of the dielectric layer and exposed at the lower surface of the structure.

An apparatus includes a first directional coupler, a second directional coupler, a first detector, and a second detector. A through port of the first directional coupler is coupled to a through port of the second directional coupler. An isolated port of the first directional coupler is coupled to an isolated port of the second directional coupler. A coupled port of the first directional coupler is coupled to the first detector. A coupled port of the second directional coupler is coupled to the second detector. A detected power signal is generated by combining an output of the first detector and an output of the second detector.

An on-chip millimeter wave power detection circuit comprises a high resistive probe for voltage sensing of millimeter wave signals, the probe comprises a metal line perpendicularly connected to a transmission line, at one end, and further connected to a power root mean square (RMS) detector at the other end; and the RMS detector for measuring a RMS voltage value of the sensed millimeter wave signals, wherein the RMS detector is characterized by a known impedance.

An on-chip millimeter wave power detection circuit comprises a high resistive probe for voltage sensing of millimeter wave signals, the probe comprises a metal line perpendicularly connected to a transmission line, at one end, and further connected to a power root mean square (RMS) detector at the other end; and the RMS detector for measuring a RMS voltage value of the sensed millimeter wave signals, wherein the RMS detector is characterized by a known impedance.