In various embodiments, a graphical plotter can create a transformation circle. An identification component can identify a center point, a radius from the center point, and a circular outer point set extended from the center point by the radius. A creation component can create a plot based, at least in part, on the center point, the radius, and the circular outer point set. An output component can cause the plot to be outputted, where the circular outer point set is dependent on trigonometry of an angle set from an x-axis pertaining to the center point and the radius.

A deterioration degree diagnosis device includes a measurement unit and a diagnosis unit. The measurement unit measures an impedance related to a contact resistance of an electrical connection portion by measuring an AC voltage between metal members and an AC current flowing between the metal members in a state where an AC signal of a predetermined frequency is applied to an electric circuit that connects two metal members in contact via the electrical connection portion. The diagnosis unit diagnoses a deterioration degree of the electrical connection portion based on a reactance component value in the impedance measured by the measurement unit.

A deterioration degree diagnosis device includes a measurement unit and a diagnosis unit. The measurement unit measures an impedance related to a contact resistance of an electrical connection portion by measuring an AC voltage between metal members and an AC current flowing between the metal members in a state where an AC signal of a predetermined frequency is applied to an electric circuit that connects two metal members in contact via the electrical connection portion. The diagnosis unit diagnoses a deterioration degree of the electrical connection portion based on a reactance component value in the impedance measured by the measurement unit.

The present invention provides a method for positioning short circuit failure, used to position the short circuit point between a first metal wire and a second metal wire. The positioning method comprises: measuring the resistance between the first metal wire and the second metal wire, and positioning the first region where the short circuit point is located by a resistance ratio. In the first region, the short circuit point may be gradually approached by periodically cutting the first metal wire and the second metal wire, electrically isolating the cut portions, and performing a plurality of voltage contrast analysis on the first metal wire and the second metal wire based on the principle of the dichotomy, thereby accurately locating the short circuit point. With the positioning method provided by the present invention, the region where the short circuit defect of the nA (nano ampere) level is located may be accurately found from the first metal wire and the second metal wire that are extremely long. The present invention contributes to improving the yield of a semiconductor device based on the defect adjustment process.

The present invention provides a method for positioning short circuit failure, used to position the short circuit point between a first metal wire and a second metal wire. The positioning method comprises: measuring the resistance between the first metal wire and the second metal wire, and positioning the first region where the short circuit point is located by a resistance ratio. In the first region, the short circuit point may be gradually approached by periodically cutting the first metal wire and the second metal wire, electrically isolating the cut portions, and performing a plurality of voltage contrast analysis on the first metal wire and the second metal wire based on the principle of the dichotomy, thereby accurately locating the short circuit point. With the positioning method provided by the present invention, the region where the short circuit defect of the nA (nano ampere) level is located may be accurately found from the first metal wire and the second metal wire that are extremely long. The present invention contributes to improving the yield of a semiconductor device based on the defect adjustment process.

A circuit for measuring an unknown resistance of a resistive element comprises a sensor circuit to generate a differential voltage dependent on the resistance of the resistive element and a reference circuit to generate a differential reference voltage and a sigma-delta converter comprising a first stage, wherein a first capacitor is selectively coupled to one of the output terminals of the sensor circuit and a second capacitor is coupled to one of the output terminals of the reference circuit. The circuit generates logarithmically compressed values.

A circuit for measuring an unknown resistance of a resistive element comprises a sensor circuit to generate a differential voltage dependent on the resistance of the resistive element and a reference circuit to generate a differential reference voltage and a sigma-delta converter comprising a first stage, wherein a first capacitor is selectively coupled to one of the output terminals of the sensor circuit and a second capacitor is coupled to one of the output terminals of the reference circuit. The circuit generates logarithmically compressed values.

A switched mode amplifier system may include a switched mode amplifier having an amplifier input coupled to an output of an analog integrator and an amplifier output, include a feedback network coupled between the amplifier output and an input of the analog integrator, and a calibration system. The calibration system may be configured to force the input of the analog integrator to a fixed known input value, force the amplifier output to a fixed known duty cycle, measure an analog signal generated at the output of the analog integrator in response to forcing the input of the analog integrator to the fixed value, determine an offset of the switched mode amplifier system based on the analog signal, and correct for the offset.

Provided is a device or the like that can improve the accuracy of battery performance evaluation of a rechargeable battery. Parameter values of a rechargeable battery model are identified on the basis of a measurement result of a complex impedance Z of a first rechargeable battery 221. The rechargeable battery model expresses an impedance of an internal resistance of the first rechargeable battery 221 with transfer functions representing IIR and FIR systems, respectively. Performance of a second rechargeable battery 222 is evaluated on the basis of a result of contrast between a voltage response characteristic V(t) that is output from a rechargeable battery 220 as the second rechargeable battery 222 when an impulse current I(t) is input to the second rechargeable battery 222, and a model voltage response characteristic V.sub.model(t) when the impulse current is input to the rechargeable battery model having the parameter values identified.

A method for determining system resistance of at least one power supply of a handheld medical device, the method including: a) generating at least one excitation voltage signal, wherein the excitation voltage signal comprises at least one direct current (DC) voltage signal, wherein the excitation voltage signal has a fast transition DC flank of 20 ns or less; b) applying the excitation voltage signal to at least one reference resistor having a predetermined or pre-defined resistance value, wherein the reference resistor is arranged in series with the power supply; c) measuring a response signal of the power supply; d) determining a signal flank from the response signal and determining an ohmic signal portion from one or both of shape and height of the signal flank; and e) determining the system resistance of the power supply from the ohmic signal portion.