The present application discloses a method and apparatus for calculating the kink current of SOI device, which is used to solve the problem that the kink current calculation in the prior art is not accurate and is not suitable for circuit simulation. The method includes: obtaining the impact ionization factor, the parasitic transistor effect factor, and the drain saturation current of the SOI device respectively; and calculating the kink current of the SOI device according to the impact ionization factor, the parasitic transistor effect factor, and the drain saturation current.

A method and device for monitoring a multi-die power module in a half-bridge switch configuration are provided. The method and device are designed to set dies in a non conductive state, select one die which is blocking a voltage, inject a current in a gate of the selected die in order to charge an input parasitic capacitance of the selected die, monitor a voltage that is representative of a voltage on the gate of the selected die, and memorize the value of the monitored voltage when the value of the monitored voltage is stabilized.

A testing method and apparatus is disclosed for testing an integrated circuit device (100) which has a dedicated ground bias pad (121) connected across a high voltage electrostatic discharge clamp circuit (123) to a well-driving ground pad (122) by applying a first voltage to the dedicated ground bias pad to bias a wafer substrate (101) while simultaneously applying a second voltage to the well-driving ground pad to bias the well region (103), where the first and second voltage create a stressing voltage across a buried insulator layer (102, 105) in the integrated circuit device so that a screening test can be conducted to screen for a defect (106) in the buried insulator layer by measuring a leakage current.

A testing apparatus includes a testing stage and an element pickup module. The test loader includes a testing area and a plurality of terminals arranged within the testing area. The element pickup module includes a mobile arm movable towards the testing stage, an air passage set disposed within the mobile arm and respectively connected to the vacuum pump equipment and the mobile arm, and a pressure-buffering portion. The pressure-buffering portion includes an elastic pad and a plurality of penetrating openings. The elastic pad is disposed on the bottom portion of the mobile arm, and provided with a flat surface for contacting a semiconductor element. The penetrating openings are distributed on the flat surface to connect to the air passage set so that the semiconductor element is fixedly sucked on the flat surface by the vacuum pump equipment through the penetrating openings.

A testing apparatus includes a testing stage and an element pickup module. The test loader includes a testing area and a plurality of terminals arranged within the testing area. The element pickup module includes a mobile arm movable towards the testing stage, an air passage set disposed within the mobile arm and respectively connected to the vacuum pump equipment and the mobile arm, and a pressure-buffering portion. The pressure-buffering portion includes an elastic pad and a plurality of penetrating openings. The elastic pad is disposed on the bottom portion of the mobile arm, and provided with a flat surface for contacting a semiconductor element. The penetrating openings are distributed on the flat surface to connect to the air passage set so that the semiconductor element is fixedly sucked on the flat surface by the vacuum pump equipment through the penetrating openings.

Device, circuit, system, and method for contact sequencing are discussed. An electrical circuit includes a first pair of terminals adapted to be connected across a first set of switchable contacts, and a second pair of terminals adapted to be connected across a second set of switchable contacts that are coupled to an arc suppression circuit. A controller circuit is coupled to the first and second pairs of terminals and is configured to sequence activation or deactivation of the first and second sets of contacts based on a contact control signal. A first power switching circuit is coupled to the first pair of terminals and the controller circuit. The first power switching circuit is configured to switch power from an external power source and to trigger the activation or the deactivation of the first set of switchable contacts based on a first logic state signal from the controller circuit.

A solid state power switch device comprises a switch unit comprising at least one switch element configured to provide power supply to a load of a vehicle while the switch element is in close state; a switch control unit in communication with the switch unit, and configured to control in open/close state the switch element; the switch control unit comprising a built in self-test module of the switch element configured to control a self-test sequence of the switch element and to check failure/success of the self-test sequence of the switch element such that the switch unit is self-tested.

A solid state power switch device comprises a switch unit comprising at least one switch element configured to provide power supply to a load of a vehicle while the switch element is in close state; a switch control unit in communication with the switch unit, and configured to control in open/close state the switch element; the switch control unit comprising a built in self-test module of the switch element configured to control a self-test sequence of the switch element and to check failure/success of the self-test sequence of the switch element such that the switch unit is self-tested.

An operating condition monitor (100) for monitoring an operating condition of a transistor-based power converter (102), comprising: a sensing apparatus (106) configured to measure a turn-off transient energy of the power converter (102), a processor (108) in communication with the sensing apparatus (106) to receive the measurement of the turn-off transient energy, the processor being configured to: compare the measurement of the turn-off transient energy to a threshold; and issue an event signal based on the comparison to the threshold meeting a comparison criterion. A method (200, 200′) of monitoring an operating state of a transistor-based power converter is also disclosed.

An operating condition monitor (100) for monitoring an operating condition of a transistor-based power converter (102), comprising: a sensing apparatus (106) configured to measure a turn-off transient energy of the power converter (102), a processor (108) in communication with the sensing apparatus (106) to receive the measurement of the turn-off transient energy, the processor being configured to: compare the measurement of the turn-off transient energy to a threshold; and issue an event signal based on the comparison to the threshold meeting a comparison criterion. A method (200, 200′) of monitoring an operating state of a transistor-based power converter is also disclosed.