The present invention relates to systems and methods that enable a connection to be made to a high speed, packaged or unpackaged semiconductor device that preserves signal integrity using probes that exhibit the properties of a coaxial transmission line so as to provide an accurate representation of the environment in which the device under test will be used. The coaxial structure further reduces capacitive coupling between probes resulting in significantly improved crosstalk performance.

The present invention relates to systems and methods that enable a connection to be made to a high speed, packaged or unpackaged semiconductor device that preserves signal integrity using probes that exhibit the properties of a coaxial transmission line so as to provide an accurate representation of the environment in which the device under test will be used. The coaxial structure further reduces capacitive coupling between probes resulting in significantly improved crosstalk performance.

An LED package structure includes a multilayered circuit board, a plurality of lighting elements, a control unit, a reflecting unit, a package unit, a plurality of test paths and a plurality of operation paths. The multilayered circuit board includes a plurality of testing pads, a first electrical connecting pad and a plurality of second electrical connecting pads. The lighting elements are disposed on the multilayered circuit board. The control unit is electrically connected to the lighting elements. The reflecting unit is disposed on the multilayered circuit board and surrounds the lighting elements. The package unit covers the lighting elements. The test paths are in electrical connection with the first electrical connecting pad, the lighting elements and one of the testing pads. The operation paths are in electrical connection with the first electrical connecting pad, the control unit, the lighting elements and one of the second electrical connecting pads.

An LED package structure includes a multilayered circuit board, a plurality of lighting elements, a control unit, a reflecting unit, a package unit, a plurality of test paths and a plurality of operation paths. The multilayered circuit board includes a plurality of testing pads, a first electrical connecting pad and a plurality of second electrical connecting pads. The lighting elements are disposed on the multilayered circuit board. The control unit is electrically connected to the lighting elements. The reflecting unit is disposed on the multilayered circuit board and surrounds the lighting elements. The package unit covers the lighting elements. The test paths are in electrical connection with the first electrical connecting pad, the lighting elements and one of the testing pads. The operation paths are in electrical connection with the first electrical connecting pad, the control unit, the lighting elements and one of the second electrical connecting pads.

An inspection apparatus including an illumination light source, a sensing probe and a processing device is provided. The illumination light source emits an illumination beam to simultaneously irradiate the plurality of light-emitting diode. The sensing probe is configured to measure a charge distribution, an electric field distribution, or a voltage distribution on the plurality of light-emitting diodes simultaneously irradiated by the illumination beam. The processing device determines a plurality of electro-optical characteristics of the plurality of light-emitting diodes through the charge distribution, the electric field distribution, or the voltage distribution on the plurality of light-emitting diodes simultaneously irradiated by the illumination beam. Moreover, a method of for inspecting light-emitting diodes is also provided.

An inspection apparatus including an illumination light source, a sensing probe and a processing device is provided. The illumination light source emits an illumination beam to simultaneously irradiate the plurality of light-emitting diode. The sensing probe is configured to measure a charge distribution, an electric field distribution, or a voltage distribution on the plurality of light-emitting diodes simultaneously irradiated by the illumination beam. The processing device determines a plurality of electro-optical characteristics of the plurality of light-emitting diodes through the charge distribution, the electric field distribution, or the voltage distribution on the plurality of light-emitting diodes simultaneously irradiated by the illumination beam. Moreover, a method of for inspecting light-emitting diodes is also provided.

A circuit device can be implemented, which includes a zener diode barrier composed of one or more zener diodes. The circuit device further includes one or more detection circuits electronically in series with the zener diode (or zener diodes) of the zener diode barrier. The zener diode barrier functions as an IS (Intrinsically Safe) barrier. The detection circuit (or circuits) facilitates the production of detailed information concerning different types of events detected by the detection circuit(s).

Disclosed is a detector 10 using a liquid spray 2000 for detecting electrical faults or shorts with the detector including a body 100 having an interior 120; a hose or pipe 130 fluidly connected to interior 120; a trigger valve 140 operatively connected to hose 130; a conductor 200 attached to detector 10; and/or a pump 110 fluidly connected to interior 120. In various embodiments the detector 10 can cause liquid spray 2000 to be sprayed on a subregion of an item such as a remotely operated vehicle to create a closed electrical circuit through the liquid spray and the conductor in the detector.

In one embodiment, a circuit includes a plurality of elementary transistors connected in parallel between a node of application of a first potential of a power supply voltage and a node for coupling a load. The plurality of transistors includes a first assembly of elementary transistors having their gates coupled to a control node by a first circuit and a second assembly of elementary transistors having their gates coupled to the control node by a second circuit. The second circuit has two states, where the first and second circuits are configured to supply a substantially identical control voltage to the gates of the first and second assemblies of elementary transistors when the second circuit is in one of the two states.

A test structure for measuring static noise margin (SNM) for one or more static random access memory (SRAM) cells can include a first transistor gate (TG) and a second TG electrically coupled to each SRAM cell. In an implementation, an interconnect between an output of a first inverter and an input of a second inverter of the SRAM cell can be electrically disconnected using a cut off. During operation of the SRAM cell, internal storage nodes within the SRAM cell can be electrically coupled through the first TG and the second TG to, for example, external pins and to a test fixture. Electrical parameters such as voltage can be measured at the internal storage nodes through the external pins and used to calculate SNM of the SRAM cell.