To provide a measurement device which allows long-term accurate measurement of voltage without adversely affecting a device under test, by ensuring a predetermined level of resistance to ESD and reducing leakage current. A measurement device includes a probe needle for contacting a device under test, a first FET for detecting voltage of the device under test, and a protection circuit for protecting the first FET from static electricity. The protection circuit includes a second FET having an oxide semiconductor film as a channel formation region.

A device and method for limiting damage to a semiconductor device under test when the semiconductor device fails during a high current, or high power test is provided. The occurrence of a failure of the device under test is detected, and power applied to the semiconductor device is diverted through a parallel path element upon detection of failure of the semiconductor device.

A method includes varying spacing between at least one of a source region or a drain region and a well contact region to create a group of configurations. The method further includes determining an effect of latchup on each configuration.

A method includes varying spacing between at least one of a source region or a drain region and a well contact region to create a group of configurations. The method further includes determining an effect of latchup on each configuration.

A circuit and diagnosis method capable of individually diagnosing abnormality of a plurality of internal FETs constituting a MOSFET provided between a secondary battery pack and an electric vehicle. Voltage at both ends of each of the internal FETs is measured while individually turning ON/OFF the internal FETs, and is compared with a diagnosis table in order to determine abnormality thereof.

A circuit and diagnosis method capable of individually diagnosing abnormality of a plurality of internal FETs constituting a MOSFET provided between a secondary battery pack and an electric vehicle. Voltage at both ends of each of the internal FETs is measured while individually turning ON/OFF the internal FETs, and is compared with a diagnosis table in order to determine abnormality thereof.

A device for supplying power to an inductive load, including an H-bridge switching structure, the switching structure being designed to drive a current in the inductive load through a first control output and a second control output, an anomaly detector designed to generate an item of anomaly detection information about the detection of an anomaly at the switching structure, the anomaly detector including a first voltage generator, a second voltage generator, a first current measuring device, a second current measuring device designed to measure a current at the output of the second voltage generator, a third current measuring device, a fourth current measuring device, a fifth current measuring device and a sixth current measuring device, the current measuring devices being designed to respectively measure the currents of the switches.

Systems and methods for estimating electrical component degradation include a processor programmed to: compute a cumulative degradation value for an electrical system component of an electrical system based on an operating parameter of the electrical system component; and to compute a corrosion compensated cumulative degradation value for the electrical system component based on the cumulative degradation value and a corrosion rating of the electrical system.

Systems and methods for estimating electrical component degradation include a processor programmed to: compute a cumulative degradation value for an electrical system component of an electrical system based on an operating parameter of the electrical system component; and to compute a corrosion compensated cumulative degradation value for the electrical system component based on the cumulative degradation value and a corrosion rating of the electrical system.

A method for supplying power to an inductive load (12) using an H-bridge (2) power supply structure, comprising a first block B1 of steps for detecting an anomaly using a “DIAG ON” diagnostic method, a second block B2 of steps for detecting an anomaly using a “DIAG OFF” diagnostic method, and finally a third block B3 of steps for discriminating the detected anomaly and for confirming a short circuit at the inductive load (12) anomaly.