In a method for contact accuracy assurance in an inspection apparatus, an alignment substrate having first marks is placed and aligned on a stage, and a position checking member, which is a transparent body simulating a probe card and has second marks at positions corresponding to the first marks, is coupled to a mounting part where the probe card is to be coupled. Further, the alignment substrate is placed in a contact area directly below the position checking member. Horizontal deviations between the first and the second marks are detected by capturing images of the first and the second marks with position checking cameras provided above the position checking member at positions respectively corresponding to the second marks to capture the images from a top down angle. The contact accuracy between the substrate and probes of the probe card is assured when the deviations are within an allowable range.

There is provided a probe device for inspecting a wafer. The probe device includes: an upper camera provided in a wafer alignment unit; a lower camera provided in a stage; a target member provided in any one of the wafer alignment unit and the stage; and a control circuit configured to control each operation of the upper and lower camera. The target member has an end surface on which a target mark is provided, wherein any of the upper and lower camera is configured to capture an image of the target mark. The control circuit is configured to acquire a captured image of the target mark using any of the upper camera and the lower camera; and calculate a correspondence between a specific physical parameter and a value represented in the captured image for a parameter represented in the captured image among physical parameters, based on the acquired captured image.

The invention provides a method for checking a semiconductor switch for a fault, wherein the semiconductor switch is driven with a PWM signal with a variable duty cycle. To the benefit of determining faults on the semiconductor switch reliably and cost-effectively, it is provided that if the semiconductor switch is operated with a duty cycle of 100% or 0%, the current measurement of the overall system is evaluated, while if the semiconductor switch is operated with a duty cycle of between 0% and 100%, the generated voltage pulses across the semiconductor switch are evaluated.

A test method and device for a contact resistor are provided, configured to test a contact resistor of a metal-oxide-semiconductor (MOS) transistor. The method includes: a resistance value per area and a temperature coefficient of resistance of the contact resistor are acquired; and a target resistance value of the contact resistor is determined according to the resistance value per area, the temperature coefficient of resistance, and an area of the contact resistor.

A control method includes: determining a first state of a plurality of components in an electronic device; acquiring a first operating state of the electronic device; and determining whether to allow one or more of the plurality of components to be removed based on the first state of the plurality of components and the first operating state of the electronic device.

Disclosed is a signal transmission circuit device (200) including a feedback signal transmission unit (210) that feeds back a control output signal (Sout) as a feedback signal (Sf) to an input side circuit (200A). A logical comparison circuit (212) detects “mismatch” between input and output by performing logical comparison between a control input signal (Sin) and the feedback signal (Sf). When a state of “mismatch” between input and output occurs, a first pulse generating circuit (202) or a second pulse generating circuit (204) outputs a first correction signal (Sa1) or a second correction signal (Sa2) corresponding to a potential (high level or low level) of the control input signal (Sin), and corrects the control output signal (Sout) to the same potential (high level or low level) as the control input signal (Sin). With such configuration, the mismatch

Disclosed is a signal transmission circuit device (200) including a feedback signal transmission unit (210) that feeds back a control output signal (Sout) as a feedback signal (Sf) to an input side circuit (200A). A logical comparison circuit (212) detects “mismatch” between input and output by performing logical comparison between a control input signal (Sin) and the feedback signal (Sf). When a state of “mismatch” between input and output occurs, a first pulse generating circuit (202) or a second pulse generating circuit (204) outputs a first correction signal (Sa1) or a second correction signal (Sa2) corresponding to a potential (high level or low level) of the control input signal (Sin), and corrects the control output signal (Sout) to the same potential (high level or low level) as the control input signal (Sin). With such configuration, the mismatch

A compensation device (20) for compensating for leakage currents has a differential current measuring device (22), a supply network detection device (42; 45), a control device (26), an amplifier (27), a compensation current selection device (36) and a feed-in device (39, 41). The supply network detection device (42; 45) generates a second signal (V_GRID; V_ES) characterizing the supply network (L1, L2, L3, N) connected to the active conductors (51, 52, 53, 54) and to supply it to the control device (26). The compensation current selection device (36) feeds in the compensation current (I_COMP) on the basis of a third signal (V_SEL) on at least one of the at least two different active conductors (51, 54), and the third signal (V_SEL) is dependent on the second signal (V_GRID; V_ES) to select at least one active conductor (51, 54) suitable for the connected supply network for the feed-in operation.

A compensation device (20) for compensating for leakage currents has a differential current measuring device (22), a supply network detection device (42; 45), a control device (26), an amplifier (27), a compensation current selection device (36) and a feed-in device (39, 41). The supply network detection device (42; 45) generates a second signal (V_GRID; V_ES) characterizing the supply network (L1, L2, L3, N) connected to the active conductors (51, 52, 53, 54) and to supply it to the control device (26). The compensation current selection device (36) feeds in the compensation current (I_COMP) on the basis of a third signal (V_SEL) on at least one of the at least two different active conductors (51, 54), and the third signal (V_SEL) is dependent on the second signal (V_GRID; V_ES) to select at least one active conductor (51, 54) suitable for the connected supply network for the feed-in operation.

A bonded structure is disclosed. The bonded structure can include a first element that has a first plurality of contact pads. The first plurality of contact pads includes a first contact pad and a second redundant contact pad. The bonded structure can also include a second element directly bonded to the first element without an intervening adhesive. The second element has a second plurality of contact pads. The second plurality of contact pads includes a third contact pad and a fourth redundant contact pad. The first contact pad is configured to connect to the third contact pad. The second contact pad is configured to connect to the fourth contact pad. The bonded structure can include circuitry that has a first state in which an electrical signal is transferred to the first contact pad and a second state in which the electrical signal is transferred to the second contact pad.