A field-programmable gate array includes a memory, a firmware state machine, a register, and an interconnect structure. The memory is configured to store a plurality of configurations. Each of the plurality of configurations has at least one parameter associated therewith. The firmware state machine is configured to read the parameters stored in the memory. The register is configured to have the parameters associated with the plurality of configurations written thereto. The interconnect structure is configured to transmit the parameters between the firmware state machine and the register. The interconnect structure is configured to receive the parameters associated with the plurality of the configurations simultaneously and the interconnect structure is configured to transmit the received parameters associated with the plurality of configurations to the register simultaneously.

Methods and systems are provided for testing and/or programming a thread-type string of RFID tags or devices. A thread-type RFID tag is formed on a length or thread having an RFID chip, a first antenna section and a second antenna section, the first and second antenna sections being positioned on the length of thread on opposite sides of the RFID chip. An RFID reader is positioned in electronic communication with a first coupler and a second coupler lying along a path, and the RFID tag and couplers are in relative motion with respect to each other such that the first and second couplers are on opposite sides of the RFID chip. A differential electric field is applied between the first coupler and the second coupler and across the RFID chip whereby the RFID reader couples to the RFID chip and interacts with the RFID tag to carry out testing and/or programming tasks with respect to the RFID tag.

A sensor integrated circuit including a regulator for generating a regulated voltage includes a digital load configured to draw a load current from the regulator in response to a clock signal during in situ operation and a comparator configured to determine the absence or presence of a fault during in situ operation. The load current is less than or equal to a predetermined level in the absence of a fault and is greater than the predetermined level in the presence of a fault. The comparator is responsive to the load current and to a threshold level and is configured to generate a comparator output signal having a level indicative of whether the load current is less than or greater than the threshold level in order to thereby determine the absence or presence of a fault during in situ operation, respectively.

Electrostatic discharge (ESD) test systems include a FET-based pulse generator using pairs of back-to-back FETs coupled to produce an ESD pulse based on discharging a capacitor that is coupled in series with a device under test (DUT). A number of FETs can be selected based on an intended ESD test voltage magnitude.

A method for predicting an operation parameter of an integrated circuit includes the following steps. A plurality of cells used by the integrated circuit are provided. A voltage-frequency sweep test is performed on each of cells through a test model to generate a plurality of parameters, wherein the parameters correspond to a voltage value. A lookup table is established according to the parameters. A timing signoff corresponding to the integrated circuit is obtained. A timing analysis is performed on a plurality of timing paths of the integrated circuit according to the timing signoff and the parameters of the lookup table to obtain a critical timing path, and the operation parameter of the integrated circuit is predicted according to the critical timing path.

A method for predicting an operation parameter of an integrated circuit includes the following steps. A plurality of cells used by the integrated circuit are provided. A voltage-frequency sweep test is performed on each of cells through a test model to generate a plurality of parameters, wherein the parameters correspond to a voltage value. A lookup table is established according to the parameters. A timing signoff corresponding to the integrated circuit is obtained. A timing analysis is performed on a plurality of timing paths of the integrated circuit according to the timing signoff and the parameters of the lookup table to obtain a critical timing path, and the operation parameter of the integrated circuit is predicted according to the critical timing path.

Circuits and methods for measuring a working current of a circuit module. An exemplary circuit for measuring a working current of a circuit module includes a capacitor. The capacitor supplies a voltage to the circuit module using a voltage on the two terminals of the capacitor. The circuit also includes a voltage measuring module. The voltage measuring module measures a voltage change amount on the two terminals of the capacitor in an unit time. The working current of the circuit module is determined by the circuit according to the voltage change amount on the two terminals of the capacitor in the unit time and a capacitance of the capacitor.

Various devices, methods and systems are provided for aging-sensitive chip authentication. In one example, among others, a chip includes a reference Schmitt trigger ring oscillator (STRO) configured to enter a sleep mode during operation of the chip; a stressed STRO; a VDD charge pump configured to boost a positive voltage supplied to the stressed STRO during operation of the chip; and/or a GND charge pump configured to under-drive a ground voltage supplied to the stressed STRO during operation of the chip. In another example, a method includes detecting activation of a chip including a reference STRO and a stressed STRO and, in response to the activation of the chip, initiating sleep mode operation of the reference STRO. In response to the activation of the chip, a VDD voltage supplied to the stressed STRO can be boosted and/or a GND voltage supplied to the stressed STRO can be under-driven.

A direct-current power supply applies a DC voltage to test semiconductor devices. A current detection unit detects a leakage current of a test circuit in which test semiconductor devices are included. A measuring instrument records a pulse waveform of the leakage current. An analyzer analyzes reliability of test semiconductor devices included in the test circuit based on the recorded pulse waveform.

Obtaining a periodic test signal, sampling the periodic test signal using a sampling element according to a sampling clock to generate a sampled periodic output, the sampling element operating according to a supply voltage provided by a voltage regulator, the voltage regulator providing the supply voltage according to a supply voltage control signal, comparing the sampled periodic output to the sampling clock to generate a clock-to-Q measurement indicative of a delay value associated with the generation of the sampled periodic output in response to the sampling clock, generating the supply voltage control signal based at least in part on an average of the clock-to-Q measurement, and providing the supply voltage to a data sampling element connected to the voltage regulator, the data sampling element being a replica of the sampling element, the data sampling element sampling a stream of input data according to the sampling clock.