Systems, devices, and methods are described herein for measuring an impedance of a DUT using an integrated impedance measurement device. A system includes a plurality of measurement circuits, a FFT processor, and a controller. The measurement circuits are coupled to the DUTs. Each measurement circuit is configured to generate a clock signal for a respective DUT, detect a voltage of the respective DUT, and generate first voltage related data using the clock signal and the voltage. The FFT processor is coupled to the measurement circuits. The FFT processor is configured to convert the first voltage related data into second voltage related data using a fast Fourier transform for each measurement circuit. The controller is coupled to the measurement circuits and the FFT processor. The controller is configured to calculate an impedance using the second voltage related data for each measurement circuit and output the impedance to each DUT.

Systems, devices, and methods are described herein for measuring an impedance of a DUT using an integrated impedance measurement device. A system includes a plurality of measurement circuits, a FFT processor, and a controller. The measurement circuits are coupled to the DUTs. Each measurement circuit is configured to generate a clock signal for a respective DUT, detect a voltage of the respective DUT, and generate first voltage related data using the clock signal and the voltage. The FFT processor is coupled to the measurement circuits. The FFT processor is configured to convert the first voltage related data into second voltage related data using a fast Fourier transform for each measurement circuit. The controller is coupled to the measurement circuits and the FFT processor. The controller is configured to calculate an impedance using the second voltage related data for each measurement circuit and output the impedance to each DUT.

The present invention provides a chip comprising a circuit module, a power switch and a detection and control circuit. The power switch is coupled between a supply voltage and the circuit module, and is used to selectively connect the supply voltage to the circuit module, and control a current amount flowing into the circuit module according to at least a control signal. The detection and control circuit is coupled to the power switch, and is used to detect a first signal generated by a first circuit positioned surrounding the circuit module, and compare the first signal with a second signal in a real-time manner to generate the control signal to adjust the current amount flowing into the circuit module.

The present disclosure provides a test system and a test method for a charging device. The test system for the charging device includes a charging device and a power supply module. The charging device has a switch tube and a control module. The power supply module is coupled to a control electrode of the switch tube and is configured to output a voltage signal to the control electrode of the switch tube, so that a voltage between a first end and a second end of the switch tube is greater than a preset voltage protection value. The control module is configured to determine whether the charging device enters a protection state when the voltage between the first end and the second end of the switch tube is greater than the preset voltage protection value, thereby testing a protection function against abnormal voltage drop of the charging device.

An integrated circuit (IC) includes subcircuits, power switches coupled to pass load current to a respective one of the subcircuits when activated by a respective switch control signal, and sensing circuits. Each of the sensing circuits is coupled to a respective one of the subcircuits, wherein the sensing circuits are configured to generate sense currents that are proportional to the respective load currents. The IC also includes a conversion circuit configured to receive at least one of the sense currents and to convert the at least one of the sense currents to an equivalent multi-bit digital signal, a timestamp circuit configured to generate a timestamp value that is correlated with the multi-bit digital signal, and a controller configured to provide signals to operate the power switches and the sensing circuits.

A pulsed-laser LADA system is provided, which utilizes temporal resolution to enhance spatial resolution. The system is capable of resolving CMOS pairs within the illumination spot using synchronization of laser pulses with the DUT clock. The system can be implemented using laser wavelength having photon energy above the silicon bandgap so as to perform single-photon LADA or wavelength having photon energy below the silicon bandgap so as to generate two-photon LADA. The timing of the laser pulses can be adjusted using two feedback loops tied to the clock signal of an ATE, or by adjusting the ATE's clock signal with reference to a fixed-pulse laser source.

A method for estimating the aging of an electronic component, characterized in that it includes the following steps: —compiling a thermal specification of the electronic component in order to determine a reference lifetime, —determining a reference temperature quantity, —measuring the actual temperature of the electronic component in operation, —determining an actual temperature quantity, —determining an equivalent operating time at the actual temperature, —transposing this equivalent operating time to the reference temperature to obtain a transposed operating time, —summing the transposed operating times to obtain a consumed lifetime comparable to the reference lifetime.

Described herein are improved techniques for measuring propagation delay of an integrated circuit that facilitate performing propagation delay measurements on-chip. Some embodiments relate to an integrated circuit comprising programmable oscillator circuitry with a plurality of oscillator stages that are switchable into and out of a delay path based on control signals from a controller, allowing the same programmable oscillator to generate many different oscillator signals according to the received control signals, for the controller to determine a central tendency and/or variance of propagation delay of the integrated circuit. Some embodiments relate to an integrated circuit including programmable delay paths configured to provide an amount of cell delay and an amount of wire delay based on control signals from a controller, allowing the same programmable delay path to generate signals for measuring delays due to cell and wire delays of the integrated circuit.

Devices and techniques for an adjustable voltage drop detection threshold in a memory device are disclosed herein. A voltage drop detection threshold of a memory device is dynamically established. A power loss event is triggered when the supply voltage falls below the voltage drop detection threshold. An error parameter associated with performing multiple memory operations on the memory device is collected. The multiple memory operations are performed while applying a supply voltage at a second supply voltage level of the memory device which is less than a first supply voltage level established as a first operating voltage for the memory device. Determining whether the error parameter is below an allowable error threshold. In response to determining that the error parameter is below the allowable error threshold, the voltage drop detection threshold is established at a voltage level less than the first supply voltage level.

Devices and techniques for an adjustable voltage drop detection threshold in a memory device are disclosed herein. A voltage drop detection threshold of a memory device is dynamically established. A power loss event is triggered when the supply voltage falls below the voltage drop detection threshold. An error parameter associated with performing multiple memory operations on the memory device is collected. The multiple memory operations are performed while applying a supply voltage at a second supply voltage level of the memory device which is less than a first supply voltage level established as a first operating voltage for the memory device. Determining whether the error parameter is below an allowable error threshold. In response to determining that the error parameter is below the allowable error threshold, the voltage drop detection threshold is established at a voltage level less than the first supply voltage level.