This document describes techniques and systems for leakage screening based on power prediction. In particular, the described systems and techniques estimate, during a silicon manufacturing process, use-case power (e.g., low power, ambient power, high power, gaming power) to apply leakage screening for apart (e.g., a chip package). In some aspects, measurable silicon parameters (e.g., leakage values, bin values, processor sensor values) may be used for use-case power prediction. Using the described techniques, a maximum allowable predicted use-case power can be determined and used for leakage screening regardless of an individual rail leakage or voltage bin assignment.

A method for estimating jitter of a clock-signal-under-test includes generating a phase-adjusted clock signal based on an input clock signal and a feedback clock signal using a frequency-divided clock signal. The method includes generating N digital time codes for each phase adjustment of P phase adjustments of the phase-adjusted clock signal using a reference clock signal. Each digital time code of the N digital time codes corresponds to a first edge of a clock signal based on the phase-adjusted clock signal. P is a first integer greater than zero and N is a second integer greater than zero. The method includes generating a jitter estimate using an estimated standard deviation of a distribution of edges of the clock signal based on the N digital time codes for each of the P phase adjustments.

A method for estimating jitter of a clock signal includes generating a phase-adjusted clock signal based on an input clock signal and a feedback clock signal using a frequency-divided clock signal. The method generating N digital time codes for each phase adjustment of P phase adjustments of the phase-adjusted clock signal using a reference clock signal. Each digital time code of the N digital time codes corresponds to a first edge of a clock signal based on the frequency-divided clock signal. P is a first integer greater than zero and N is a second integer greater than zero. The method includes generating a jitter indicator based on an expected period of the clock signal and the N digital time codes for each phase adjustment of the P phase adjustments.

An apparatus for testing a device under test (DUT) is provided. The apparatus includes a power supply device and a data generating device. The power supply device is configured to provide a first voltage and a second voltage to the DUT. The data generating device is configured to provide first data to the DUT. The power supply device is configured to provide the first voltage to the DUT in a first time duration. The data generating device is configured to provide the first data to the DUT in the first time duration. The power supply device is configured to provide the second voltage to the DUT in a second time duration after the first time duration. The second voltage is different from the first voltage.

A method for characterizing an integrated circuit that includes ramping the supply voltage to an integrated circuit as a function of time for each of the transistors in the integrated circuit, and measuring a power supply current for the integrated circuit during the ramping of the power supply voltage. The measured peaks in the power supply current are a current pulse that identifies an operation state in which each of the transistors are in an on state. The peaks in the power supply current are compared to the reference peaks for the power supply current for a reference circuit having a same functionality as the integrated circuit to determine the integrated circuit's fitness.

An apparatus includes an integrated circuit that includes an in-circuit power switch coupled to a power supply node, a functional circuit coupled between the in-circuit power switch and a ground node, a test circuit, and a test power switch coupled to the test circuit, wherein the test power switch is a replica of the in-circuit power switch. The test circuit is configured to determine characteristics of the test power switch, and to measure a voltage difference across the in-circuit power switch. The test circuit is also configured to use the characteristics of the test power switch and the voltage difference to determine a power consumption of the functional circuit.

A test and measurement system for analyzing a device under test, including a database configured to store test results related to tests performed with one or more prior devices under test, a receiver to receive new test results about a new device under test, a data analyzer configured to analyze the new test results based on the stored test results, and a health score generator configured to generate a health score for the new device under test based on the analysis from the data analyzer.

An abnormality detection method according to one aspect of the present disclosure is a method of detecting an abnormality in an AC signal to be input from an AC power supply. The method includes, where an ideal AC signal is represented as V.sub.0 sin ωt (V.sub.0: amplitude, co: angular frequency, t: time), calculating an arithmetic value including a value represented by sin.sup.2ωt+cos.sup.2ωt and determining that the AC signal is abnormal when the arithmetic value is out of a threshold range.

Various implementations described herein relate to systems and methods for determining abnormal leakage current of a capacitor by determining a number of recent leakage current values for the capacitor and determining a maximum upper limit, minimum upper limit, maximum lower limit, and minimum lower limit based on leakage current values different from the recent leakage current values. A present upper limit and a present lower limit are determined for the recent leakage current values. Abnormal leakage current is determined in response to determining that the present upper limit being greater than an upper threshold (determined based on the maximum upper limit and the minimum upper limit) or the present lower limit being less than a lower threshold (determined based on the maximum lower limit and the minimum lower limit).

A temperature measurement circuit includes a band-gap reference circuit configured to generate a band-gap reference voltage that is fixed regardless of an operation temperature, a reference voltage generator circuit configured to generate a measurement reference voltage by adjusting the band-gap reference voltage, a sensing circuit configured to generate a temperature-variant voltage based on a bias current, where the temperature-variant voltage is varied depending on the operation temperature, an analog-digital converter circuit configured to generate a first digital code indicating the operation temperature based on the measurement reference voltage and the temperature-variant voltage, and an analog built-in self-test (BIST) circuit configured to generate a plurality of flag signals indicating whether each of the band-gap reference voltage, the measurement reference voltage, and a bias voltage corresponding to the bias current is included in a predetermined range.