A test assembly for testing an antenna-in-package (AiP) device includes a socket over a circuit board, where the socket includes an opening for receiving the AiP device; a plunger configured to move along sidewalls of the opening, where during testing of the AiP device, the plunger is configured to cause the AiP device to be pressed towards the circuit board such that the AiP device is operatively coupled to the circuit board via input/output connections of the AiP device and of the circuit board; and a loadboard disposed within the socket and between the plunger and the AiP device, where the loadboard includes a coupling structure configured to be electromagnetically coupled to a transmit antenna and to a receive antenna of the AiP device, so that testing signals transmitted by the transmit antenna are conveyed to the receive antenna externally relative to the AiP device through the coupling structure.

A method for measuring performance of at least one DUT in a reverberation chamber over a frequency band, the method including, iteratively: generating a fading scenario by the reverberation chamber; identifying at least one measurement sub-band included in the frequency band, wherein the at least one measurement sub-band complies with a gain flatness criterion; measuring performance of the at least one DUT in the at least one identified measurement sub-band, thereby generating at least one performance measurement result; accumulating the at least one performance measurement result; and determining measurement coverage and terminating the performance measurement in case the measurement coverage meets a coverage criterion.

The disclosed technology generally relates to characterization of semiconductor structures, and more particularly to optical characterization of high-k dielectric materials. A method includes providing a semiconductor structure comprising a semiconductor and a high-k dielectric layer formed over the semiconductor, wherein the dielectric layer has electron traps formed therein. The method additionally includes at least partially transmitting an incident light having an incident energy through the high-k dielectric layer and at least partially absorbing the incident light in the semiconductor. The method additionally includes measuring a nonlinear optical spectrum resulting from the light having the energy different from the incident energy, the nonlinear optical spectrum having a first region and a second region, wherein the first region changes at a different rate in intensity compared to the second region. The method further includes determining from the nonlinear optical spectrum one or both of a first time constant from the first region and a second time constant from the second region, and determining a trap density in the high-k dielectric layer based on the one or both of the first time constant and the second time constant.

The disclosed technology generally relates to characterization of semiconductor structures, and more particularly to optical characterization of high-k dielectric materials. A method includes providing a semiconductor structure comprising a semiconductor and a high-k dielectric layer formed over the semiconductor, wherein the dielectric layer has electron traps formed therein. The method additionally includes at least partially transmitting an incident light having an incident energy through the high-k dielectric layer and at least partially absorbing the incident light in the semiconductor. The method additionally includes measuring a nonlinear optical spectrum resulting from the light having the energy different from the incident energy, the nonlinear optical spectrum having a first region and a second region, wherein the first region changes at a different rate in intensity compared to the second region. The method further includes determining from the nonlinear optical spectrum one or both of a first time constant from the first region and a second time constant from the second region, and determining a trap density in the high-k dielectric layer based on the one or both of the first time constant and the second time constant.

Systems, devices, and methods for performing a non-contact electrical measurement (NCEM) on a NCEM-enabled cell included in a NCEM-enabled cell vehicle may be configured to perform NCEMs while the NCEM-enabled cell vehicle is moving. The movement may be due to vibrations in the system and/or movement of a movable stage on which the NCEM-enabled cell vehicle is positioned. Position information for an electron beam column producing the electron beam performing the NCEMs and/or for the moving stage may be used to align the electron beam with targets on the NCEM-enabled cell vehicle while it is moving.

A system for over-the-air testing of a device under test includes a measurement antenna, a reference antenna, a device under test capable of wirelessly transmitting and/or receiving complex radio frequency signals, and an analyzer. The analyzer has at least two ports, wherein the reference antenna is connected with a first port of the analyzer. The measurement antenna is connected with a second port of the analyzer. The analyzer is capable of determining a phase difference and a power ratio of radio frequency signals received via the measurement antenna and the reference antenna. The analyzer is capable of performing an IQ analysis on complex radio frequency signals. Further, a method of over-the-air testing of a device under test is disclosed.

Methods of characterizing electrical properties of a semiconductor layer structure on a wafer with topside semiconductor layers on an insulating or semi-insulating substrate, the semiconductor layer structure including a high electron mobility transistor (HEMT) heterostructure with a two-dimensional electron gas (2DEG) at a heterointerface between the semiconductor layers of the heterostructure. The methods include: (a) physically contacting the topside of the wafer within a narrow border zone at an edge of the wafer with a flexible metal cantilever electrode of a contacting device, wherein the flexible metal cantilever electrode contacts one or more of the semiconductor layers exposed at the narrow border zone so that the flexible metal cantilever electrode is in electrical contact with the 2DEG; and (b) applying corona charge bias and measuring a surface voltage of the semiconductor layers using a non-contact probe while maintaining the electrical contact with the 2DEG. The physical contacting to the topside of the wafer is noncontaminating and noninvasive to the semiconductor layers.

An integrated circuit (IC) includes a first circuit layer that includes a first wireless power transfer (WPT) device, a first chip electrically connected to the first circuit layer, and a first tracking circuit disposed in the first chip. The first WPT device may be configured to extract energy from an electromagnetic signal and provide an output voltage. The first tracking circuit may be powered by the output voltage of the first WPT device and may output tracking data in response to an instruction extracted from the electromagnetic signal.

The present disclosure relates to a metalens unit including a metalens having a structure for reducing a thickness. The metalens unit includes a metalens and a holding portion for the metalens. The metalens includes a base portion and a first antenna portion. The first antenna portion is constituted by a plurality of first antennas each having a first refractive index and a first intermediate portion having a second refractive index and positioned between the plurality of first antennas. A first antenna portion is formed such that one-dimensional arrangement constituted by some of end surfaces of the plurality of first antennas includes a pattern in which at least one of a size of the end surface, a shape of the end surface, and an arrangement pitch is changed along a reference line.

A circuit board incorporable into an apparatus includes a substrate, a reception unit that is provided on the substrate and that wirelessly receives a function program for achieving a function, a storage unit that is provided on the substrate and to which a writing program for writing the function program received by the reception unit has been written in advance, a power supply provided on the substrate, and a power control unit that supplies power for receiving, with the reception unit, the function program and power for writing, on a basis of the writing program, the function program to the storage unit using the power supply without using an external power supply.