A connection part which connects a terminal part and a processing part include an equalization resistor that is inserted into each main line and a 0-Ω resistor that is a short circuit line for short circuiting a main line of a first terminal and a main line of a second terminal. In the terminal part, the second terminal s unused, and a battery cell adjacent to a high-potential side of a stack bar is connected between the first terminal and a third terminal.

A connection part which connects a terminal part and a processing part include an equalization resistor that is inserted into each main line and a 0-Ω resistor that is a short circuit line for short circuiting a main line of a first terminal and a main line of a second terminal. In the terminal part, the second terminal s unused, and a battery cell adjacent to a high-potential side of a stack bar is connected between the first terminal and a third terminal.

A measuring assembly for measuring a temperature and a voltage includes a contact element including a temperature sensor and an electrically conductive portion, a voltage measurement conductor electrically connected to the conductive portion of the contact element, and an electrically conductive fixation element electrically connected to the conductive portion of the contact element, the electrically conductive fixation element extending through a fixation hole of a busbar in a fixed state to connect to the busbar by an elastic force provided by the electrically conductive fixation element in the fixed state, and the electrically conductive fixation element pressing the contact element to a measuring surface of the busbar by the elastic force in the fixed state.

A semiconductor device that is of a face-down mounted chip-size package type, discharges electric charges stored in an electric storage device (battery), and has a power loss area ratio of at least 0.4 (W/mm.sup.2) obtained by dividing a power loss (W) in the semiconductor device at time of the discharge by an area (mm.sup.2) of the semiconductor device, the semiconductor device comprising: a field-effect transistor of a horizontal type and a resistor that are connected in series in stated order between an inflow terminal and an outflow terminal; and a control circuit that causes a discharge current to be constant without depending on an applied voltage between the inflow terminal and the outflow terminal. A difference between a maximum temperature of a field-effect transistor portion and a temperature of a resistor portion is within five degrees Celsius in a discharge period.

A semiconductor device that is of a face-down mounted chip-size package type, discharges electric charges stored in an electric storage device (battery), and has a power loss area ratio of at least 0.4 (W/mm.sup.2) obtained by dividing a power loss (W) in the semiconductor device at time of the discharge by an area (mm.sup.2) of the semiconductor device, the semiconductor device comprising: a field-effect transistor of a horizontal type and a resistor that are connected in series in stated order between an inflow terminal and an outflow terminal; and a control circuit that causes a discharge current to be constant without depending on an applied voltage between the inflow terminal and the outflow terminal. A difference between a maximum temperature of a field-effect transistor portion and a temperature of a resistor portion is within five degrees Celsius in a discharge period.

Disclosed is a method and apparatus for testing an internal short of a secondary battery by simulating the use environment situation where the secondary battery is actually used, and a secondary battery for an internal short test, which is used in the method. The method for testing an internal short of a secondary battery includes the steps of mounting a P-N junction diode in a secondary battery; charging the secondary battery; and evaluating a state of the secondary battery by considering that an internal short occurs in the secondary battery when the P-N junction diode is switched on.

Disclosed is a method and apparatus for testing an internal short of a secondary battery by simulating the use environment situation where the secondary battery is actually used, and a secondary battery for an internal short test, which is used in the method. The method for testing an internal short of a secondary battery includes the steps of mounting a P-N junction diode in a secondary battery; charging the secondary battery; and evaluating a state of the secondary battery by considering that an internal short occurs in the secondary battery when the P-N junction diode is switched on.

A current detector includes: a printed circuit board; and a resistor for detecting an electric current of the electrochemical device, wherein a connector having a first terminal is mounted on the printed circuit board, and the resistor has a second terminal which is brought into contact with the first terminal.

Disclosed is a method for producing a sensor and a battery pressure detecting sensor produced thereby, which operate in a short mode when a pressure of a standard level or more is applied, thereby preventing the breakage and ignition of a battery due to swelling. The disclosed battery pressure detecting sensor disposes a membrane sheet formed with a first accommodation hole under a conductive sheet, has a part of the conductive sheet connected to a first terminal through a first accommodation hole, and has the membrane sheet connected to a second terminal.

Disclosed is a method for producing a sensor and a battery pressure detecting sensor produced thereby, which operate in a short mode when a pressure of a standard level or more is applied, thereby preventing the breakage and ignition of a battery due to swelling. The disclosed battery pressure detecting sensor disposes a membrane sheet formed with a first accommodation hole under a conductive sheet, has a part of the conductive sheet connected to a first terminal through a first accommodation hole, and has the membrane sheet connected to a second terminal.