An apparatus for magnetic flux density based DNA sequencing. The apparatus comprising a device for generating a static magnetic field; a nanopore device; a gel medium; and a magnetometer for measuring a change in magnetic flux density of the static magnetic field as a chain of nucleotides travels through the gel medium.

An apparatus for magnetic flux density based DNA sequencing. The apparatus comprising a device for generating a static magnetic field; a nanopore device; a gel medium; and a magnetometer for measuring a change in magnetic flux density of the static magnetic field as a chain of nucleotides travels through the gel medium.

The present invention provides a triaxial magnetism detecting apparatus having a high mechanical strength and being compact in size by simplifying the arrangement configuration of magnetism detectors for the reduction of the number of components and allowing easy angular adjustment of the magnetism detectors and easy installation of the magnetism detectors on the apparatus body, and a satellite. A triaxial magnetism detecting apparatus has a power supply board, a circuit board, and a magnetism detecting unit, which are fixed on a body, and the circuit board and the magnetism detecting unit are horizontally connected. By using the magnetism detecting unit, the triaxial magnetism detecting apparatus detects magnitudes of magnetic fields in mutually perpendicular X-axis, Y-axis, and Z-axis directions.

The present invention provides a triaxial magnetism detecting apparatus having a high mechanical strength and being compact in size by simplifying the arrangement configuration of magnetism detectors for the reduction of the number of components and allowing easy angular adjustment of the magnetism detectors and easy installation of the magnetism detectors on the apparatus body, and a satellite. A triaxial magnetism detecting apparatus has a power supply board, a circuit board, and a magnetism detecting unit, which are fixed on a body, and the circuit board and the magnetism detecting unit are horizontally connected. By using the magnetism detecting unit, the triaxial magnetism detecting apparatus detects magnitudes of magnetic fields in mutually perpendicular X-axis, Y-axis, and Z-axis directions.

Fluxgate based current transducer for measuring a primary current flowing in a primary conductor, comprising a fluxgate magnetic field detector and a measuring circuit. The fluxgate magnetic field detector includes an excitation coil driven by an oscillating excitation current (I.sub.fluxgate) supplied by the measuring circuit. The measuring circuit is configured to provide a first and a second measurement output of the oscillating excitation current. The transducer further comprises a signal output processing unit for comparing in real-time the first and second measurements outputs, wherein the signal output processing unit is configured to send an error signal output if the difference between said first and second measurements outputs exceeds a tolerance value.

Fluxgate based current transducer for measuring a primary current flowing in a primary conductor, comprising a fluxgate magnetic field detector and a measuring circuit. The fluxgate magnetic field detector includes an excitation coil driven by an oscillating excitation current (I.sub.fluxgate) supplied by the measuring circuit. The measuring circuit is configured to provide a first and a second measurement output of the oscillating excitation current. The transducer further comprises a signal output processing unit for comparing in real-time the first and second measurements outputs, wherein the signal output processing unit is configured to send an error signal output if the difference between said first and second measurements outputs exceeds a tolerance value.

An integrated fluxgate magnetic gradient sensor includes a common mode sensitive fluxgate magnetometer and a differential mode sensitive fluxgate magnetometer. The common mode sensitive fluxgate magnetometer includes a first core adjacent to a second core. The first and second cores are wrapped by a first excitation wire coil configured to receive an excitation current that affects a differential mode magnetic field. The differential mode sensitive fluxgate magnetometer includes a third core adjacent to the first core and a fourth core adjacent to the second core. The third and fourth cores are wrapped by a second excitation wire coil configured to receive an excitation current that affects a common mode magnetic field.

An integrated fluxgate magnetic gradient sensor includes a common mode sensitive fluxgate magnetometer and a differential mode sensitive fluxgate magnetometer. The common mode sensitive fluxgate magnetometer includes a first core adjacent to a second core. The first and second cores are wrapped by a first excitation wire coil configured to receive an excitation current that affects a differential mode magnetic field. The differential mode sensitive fluxgate magnetometer includes a third core adjacent to the first core and a fourth core adjacent to the second core. The third and fourth cores are wrapped by a second excitation wire coil configured to receive an excitation current that affects a common mode magnetic field.

An integrated circuit has a substrate, a circuit, a core structure, a first encapsulation layer, a second encapsulation layer, and an oxide layer. The circuit includes transistors with active regions developed on the substrate and a metal layer formed above the active regions to provide interconnections for the transistors. The core structure is formed above the metal layer. The first encapsulation layer covers the core structure, and it has a first thermal expansion coefficient. The second encapsulation layer covers the first encapsulation layer over the core structure, and it has a second thermal expansion coefficient that is different from the first thermal expansion coefficient. As a part of the stress relief structure, the oxide layer is formed above the second encapsulation layer. The oxide layer includes an oxide thickness sufficient to mitigate a thermal stress between the first and second encapsulation layers.

An integrated circuit has a substrate, a circuit, a core structure, a first encapsulation layer, a second encapsulation layer, and an oxide layer. The circuit includes transistors with active regions developed on the substrate and a metal layer formed above the active regions to provide interconnections for the transistors. The core structure is formed above the metal layer. The first encapsulation layer covers the core structure, and it has a first thermal expansion coefficient. The second encapsulation layer covers the first encapsulation layer over the core structure, and it has a second thermal expansion coefficient that is different from the first thermal expansion coefficient. As a part of the stress relief structure, the oxide layer is formed above the second encapsulation layer. The oxide layer includes an oxide thickness sufficient to mitigate a thermal stress between the first and second encapsulation layers.