Methods and apparatus for providing a high isolation current sensor. In embodiments, a current sensor includes a leadframe having a current conductor first portion and a second portion, a magnetic field sensing element positioned in relation to the current conductor for detecting a magnetic generated by current flow through the current conductor, and a die supported by at least a portion of the first and/or second portions of the leadframe, wherein the first portion of the lead frame includes an isolation region aligned with a first edge of the die. In embodiments, a current sensor includes SOI processing and features to enhance active layer isolation.

Methods and apparatus for providing a high isolation current sensor. In embodiments, a current sensor includes a leadframe having a current conductor first portion and a second portion, a magnetic field sensing element positioned in relation to the current conductor for detecting a magnetic generated by current flow through the current conductor, and a die supported by at least a portion of the first and/or second portions of the leadframe, wherein the first portion of the lead frame includes an isolation region aligned with a first edge of the die. In embodiments, a current sensor includes SOI processing and features to enhance active layer isolation.

It is aimed at improving sensitivity of a magnetic sensor using the magnetic impedance effect. A magnetic sensor includes: a non-magnetic substrate; and a sensitive element including a soft magnetic material layer composed of an amorphous alloy with an initial magnetic permeability of 5,000 or more, the soft magnetic material layer being provided on the substrate, having a longitudinal direction and a short direction, being provided with uniaxial magnetic anisotropy in a direction crossing the longitudinal direction, and sensing a magnetic field by a magnetic impedance effect.

The sensitivity of a magnetic sensor using a sensitive element sensing a magnetic field by the magnetic impedance effect is increased. The magnetic sensor includes: a sensitive element sensing a magnetic field by a magnetic impedance effect; and a focusing member provided to face the sensitive element, configured with a soft magnetic material, and focusing magnetic force lines from outside onto the sensitive element.

A magnetic field sensor apparatus includes a sensor signal generator generating a sensor signal responsive to a magnetic field. A switching level provider provides during a power up mode a switching level based on a most recently updated valid one of a first and a second value of a default switching level. If an update triggering condition occurs, the not most recently updated one of the first and second values of the default switching level is updated and the most recently updated one of the first and second values of the default switching level is maintained unchanged until a next update triggering condition occurs, so that the first and second values of the default switching level are updated alternately on consecutive triggering conditions.

According to some embodiments, a method implemented in electronic circuitry includes: receiving a first signal having a sinusoidal waveform; receiving a second signal having a sinusoidal waveform; generating a composite signal responsive to the first and second signals; determining an orthogonality adjustment coefficient based on a duty cycle of the composite signal; and applying the orthogonality adjustment coefficient to generate an adjusted second signal that is substantially orthogonal to the first signal.

According to some embodiments, a method implemented in electronic circuitry includes: receiving a first signal having a sinusoidal waveform; receiving a second signal having a sinusoidal waveform; generating a composite signal responsive to the first and second signals; determining an orthogonality adjustment coefficient based on a duty cycle of the composite signal; and applying the orthogonality adjustment coefficient to generate an adjusted second signal that is substantially orthogonal to the first signal.

A chopping technique, and associated structure, is implemented to cancel the magnetic 1/f noise contribution in a Tunneling Magnetoresistance (TMR) field sensor. The TMR field sensor includes a first bridge circuit including multiple TMR elements to sense a magnetic field and a second circuit to apply a bipolar current pulse adjacent to each TMR element. The current lines are serially or sequentially connected to a current source to receive the bipolar current pulse. The field sensor has an output including a high output and a low output in response to the bipolar pulse. This asymmetric response allows a chopping technique for 1/f noise reduction in the field sensor.

A chopping technique, and associated structure, is implemented to cancel the magnetic 1/f noise contribution in a Tunneling Magnetoresistance (TMR) field sensor. The TMR field sensor includes a first bridge circuit including multiple TMR elements to sense a magnetic field and a second circuit to apply a bipolar current pulse adjacent to each TMR element. The current lines are serially or sequentially connected to a current source to receive the bipolar current pulse. The field sensor has an output including a high output and a low output in response to the bipolar pulse. This asymmetric response allows a chopping technique for 1/f noise reduction in the field sensor.

Provided is a magnetic field detection device that includes a first soft magnetic body and a magnetic detector. The first soft magnetic body includes a first plate and a first protrusion. The first plate includes a first surface including a first outer edge. The first protrusion is provided at a first arrangement position in the first surface and includes a first tip on opposite side to the first surface. The first arrangement position is set back from the first outer edge. The magnetic detector is provided in the vicinity of the first tip.