Transistor devices are provided. In some example implementations, a magnetic field sensor chip is fitted on a load electrode of a transistor chip. In other example implementations, two magnetic field sensors are arranged on a load electrode of a transistor chip in such a way that they measure different effective magnetic fields in the event of current flow through the transistor chip.

A magnetic sensor circuit includes: a first element including series-connected resistor and capacitor, or including only a capacitor; a second element including series-connected resistor and inductor, or including a magnetic sensor sensing a magnetic field by a magnetic impedance effect; a third element including series-connected resistor and capacitor, or including only a capacitor; and a fourth element including a magnetic sensor sensing a magnetic field by a magnetic impedance effect, wherein a first series circuit part including the series-connected first and second elements and a second series circuit part including the series-connected third and fourth elements are connected in parallel, and, when the magnetic field sensed by the magnetic sensor has a predetermined reference value, a product of impedance Z1 of the first element and impedance Z4 of the fourth element and a product of impedance Z2 of the second element and impedance Z3 of the third element are equal.

A structure includes a substrate which includes a surface. The structure also includes a horizontal-type Hall sensor positioned within the substrate and below the surface of the substrate. The structure further includes a patterned magnetic concentrator positioned above the surface of the substrate, and a protective overcoat layer positioned above the magnetic concentrator.

In a GSR sensor element, tm and ti of rising pulse detection are close, and the induced voltage is significantly high at tm. Thus, a variation due to the magnetic field cannot be ignored. To remove an induced voltage from an output voltage and achieve a GSR sensor with a rising pulse detection system. On the basis of the knowledge that the polarity of an induced voltage becomes opposite relative to a direction of the current flowing in a magnetic wire, if one coil includes therein two magnetic wires in which currents of opposite polarities flow, an induced current is cancelled, allowing for the detection of a voltage in proportion to a magnetic field.

A magnetic sensor senses a magnetic field in a predetermined magnetic sensing direction. The magnetic sensor includes a chip on which at least one magnetic device is provided. The length of the chip in the magnetic sensing direction is twice or more the length of the chip in an orthogonal direction that is orthogonal or substantially orthogonal to the magnetic sensing direction.

A method for scanning artificial structure, wherein a scanning artificial structure apparatus comprises four magnetic-field sensors, the four magnetic-field sensors are non-coplanar configured, the method comprises following steps of: moving the scanning artificial structure apparatus along a scanning path within a to-be-tested area, in the meantime, measuring magnetic field by the four magnetic-field sensors, and recording a position sequence when measuring magnetic field, wherein four magnetic-field measurement sequences are measured by the four magnetic-field sensors; and calculating a magnetic-field variation distribution from the four magnetic-field measurement sequences and the position sequence, wherein the magnetic-field variation distribution is corresponding to at least one artificial structure distribution.

A planar Hall sensing element includes a first pair of sensing electrodes mutually opposed in a first direction across the sensing element and a second pair of sensing electrodes mutually opposed in a second direction across the sensing element, with the second direction orthogonal to the first direction. A first pair of bias electrodes is mutually opposed in a third direction and a second pair mutually opposed in a fourth direction across the sensing element, the fourth direction orthogonal to the third direction. The third and fourth directions are rotated 45° with respect to the first and second directions so each sensing electrode is arranged between a bias electrode of the first pair and second pair. A DC bias current is supplied between the first and second pairs of bias electrodes. First and second Hall voltages are sensed at the first and second pairs of sensing electrodes.

A device for guiding charge carriers and uses of the device are proposed, wherein the charge carriers are guided by means of a magnetic field along a curved or angled main path in a two-dimensional electron gas or in a thin superconducting layer, so that a different presence density is produced at electrical connections.

A device for guiding charge carriers and uses of the device are proposed, wherein the charge carriers are guided by means of a magnetic field along a curved or angled main path in a two-dimensional electron gas or in a thin superconducting layer, so that a different presence density is produced at electrical connections.

A magnetic field sensor apparatus includes a sensor signal generator generating a sensor signal responsive to a magnetic field. A switching level provider provides during a power up mode a switching level based on a most recently updated valid one of a first and a second value of a default switching level. If an update triggering condition occurs, the not most recently updated one of the first and second values of the default switching level is updated and the most recently updated one of the first and second values of the default switching level is maintained unchanged until a next update triggering condition occurs, so that the first and second values of the default switching level are updated alternately on consecutive triggering conditions.