A magnetic sensor using a spin-orbit torque (SOT) and a sensing method using the same, include an SOT channel layer made of a heavy metal material, a ferromagnetic layer stacked on the SOT channel layer, and a protective layer stacked on the ferromagnetic layer, wherein an SOT is generated due to a current applied to the SOT channel layer to vary magnetization of the ferromagnetic layer, and the magnetic sensor which utilizes an SOT with a fast response speed and high sensitivity using a simplified metal thin film structure in which the SOT is generated is provided.

Systems, methods and apparatuses for magnetic field sensors with self-test include a detection circuit to detect speed and direction of a target. One or more circuits to test accuracy of the detected speed and direction may be included. One or more circuits to test accuracy of an oscillator may also be included. One or more circuits to test the accuracy of an analog-to-digital converter may also be included. Additionally one or more IDDQ and/or built-in-self test (BEST) circuits may be included.

Systems, methods and apparatuses for magnetic field sensors with self-test include a detection circuit to detect speed and direction of a target. One or more circuits to test accuracy of the detected speed and direction may be included. One or more circuits to test accuracy of an oscillator may also be included. One or more circuits to test the accuracy of an analog-to-digital converter may also be included. Additionally one or more IDDQ and/or built-in-self test (BEST) circuits may be included.

It is aimed at improving sensitivity of a magnetic sensor using the magnetic impedance effect. A magnetic sensor includes: a non-magnetic substrate; and a sensitive element including a soft magnetic material layer composed of an amorphous alloy with an initial magnetic permeability of 5,000 or more, the soft magnetic material layer being provided on the substrate, having a longitudinal direction and a short direction, being provided with uniaxial magnetic anisotropy in a direction crossing the longitudinal direction, and sensing a magnetic field by a magnetic impedance effect.

A method of calibrating a magnetic field sensor includes setting a first input signal at a first input node of a processor of the magnetic field sensor to a constant value. While the magnetic field sensor experiences a magnetic field, a first transition at an output node of the processor is measured. A second input signal at a second input node of the processor is set to the constant value. While the magnetic field sensor experiences the magnetic field, a second transition of at the output node of the processor is measured. An orthogonality error value is calculated based on a deviation of the first transition and the second transition. The first and/or second input signal is adjusted by modifying the first and/or second input signal by a function of the calculated orthogonality error value to compensate for the orthogonality error.

A sensor includes a lead frame having a first surface, a second opposing surface, and a plurality of leads and a semiconductor die having a first surface attached to the first surface of the lead frame and a second, opposing surface. The sensor further includes a non-conductive mold material enclosing the die and at least a portion of the lead frame, a conductive coil secured to the non-conductive mold material, a mold material secured to the non-conductive mold material and enclosing the conductive coil, wherein the mold material has a central region and an element disposed in the central region of the mold material.

A sensor includes a lead frame having a first surface, a second opposing surface, and a plurality of leads and a semiconductor die having a first surface attached to the first surface of the lead frame and a second, opposing surface. The sensor further includes a non-conductive mold material enclosing the die and at least a portion of the lead frame, a conductive coil secured to the non-conductive mold material, a mold material secured to the non-conductive mold material and enclosing the conductive coil, wherein the mold material has a central region and an element disposed in the central region of the mold material.

A magnetic-field-sensitive MOSFET (MagFET) is described herein. In accordance with one embodiment, the MagFET comprises a semiconductor body, a first well region arranged in the semiconductor body and being doped with dopants of a first doping type, and a number of N contact regions arranged in the first well region and doped with dopants of a second doping type, which is complementary to the first doping type, wherein N is equal to or greater than three. A gate electrode covers the first well region between the contact regions. The gate electrode is separated from the first well region by an isolation layer and is configured to control a charge carrier density in the first well region between the contact regions dependent on a voltage applied at the gate electrode. The first well region has a center of symmetry and the contact regions are arranged rotationally symmetric with respect to the center of symmetry with a rotational symmetry of order N.

A magnetic-field-sensitive MOSFET (MagFET) is described herein. In accordance with one embodiment, the MagFET comprises a semiconductor body, a first well region arranged in the semiconductor body and being doped with dopants of a first doping type, and a number of N contact regions arranged in the first well region and doped with dopants of a second doping type, which is complementary to the first doping type, wherein N is equal to or greater than three. A gate electrode covers the first well region between the contact regions. The gate electrode is separated from the first well region by an isolation layer and is configured to control a charge carrier density in the first well region between the contact regions dependent on a voltage applied at the gate electrode. The first well region has a center of symmetry and the contact regions are arranged rotationally symmetric with respect to the center of symmetry with a rotational symmetry of order N.

Sensors measure magnetic field components, and the measured fields are used to calculate and estimated transverse position of a longitudinal electric current flowing as an electric discharge across a discharge gap. Based on the estimated position, and according to a selected transverse trajectory or distribution of the estimated discharge position, magnetic fields are applied transversely across the discharge gap so as to control or alter the estimated discharge position. Inventive apparatus and methods can be employed, inter alia, during operation of a vacuum arc furnace.