A control device configured to communicate with a first projector which projects a first image in a first projection area, and a second projector which projects a second image in a second projection area having a first overlap area overlapping the first projection area to make the first projector and the second projector perform an edge blending process includes a reception section for receiving input of designation information including a direction in which an overlap width, a generation section for generating first overlap information including information representing first side in the first overlap area and information representing the overlap width of the first overlap area, and second overlap information including information representing second side in the first overlap area and the information, and a transmission section for transmitting the first overlap information to the first projector, and the second overlap information to the second projector.

Systems and methods are provided that facilitate high-sensitivity, carrier-resolved photo-Hall effect measurements. Majority and minority carrier properties can be measured and determined simultaneously. In one aspect, a system and method determine majority carrier type, density and mobility and, with modulated illumination, minority carrier mobility and photocarrier density. In another aspect, a system and method can determine hole and electron mobility, photocarrier density, absorbed photon density, recombination lifetime and diffusion length for hole, electron and ambipolar transport.

Systems and methods are provided that facilitate high-sensitivity, carrier-resolved photo-Hall effect measurements. Majority and minority carrier properties can be measured and determined simultaneously. In one aspect, a system and method determine majority carrier type, density and mobility and, with modulated illumination, minority carrier mobility and photocarrier density. In another aspect, a system and method can determine hole and electron mobility, photocarrier density, absorbed photon density, recombination lifetime and diffusion length for hole, electron and ambipolar transport.

According to one embodiment, a measurement apparatus includes a magnetic field generation section that applies a predetermined magnetic field to a device under test. A current source supplies a current of a rectangular wave to the device under test in a direction of crossing the magnetic field. A voltage measurement section measures a voltage difference generated in the device under test. A restoration section demodulates the voltage difference using a demodulated signal having the same frequency as a frequency of the rectangular wave and synchronized with the rectangular wave, removes harmonic components from the demodulated voltage difference, and restores an electromotive voltage generated in the device under test. A computing section measures the device under test using low frequency components of the electromotive voltage.

The size and cost of a magnetic sensor suitable for closed loop control is reduced. A magnetic sensor includes a magnetoresistive effect element that is electrically connected between terminals and extends in the x-direction and a magnetic member that is electrically connected between the terminals and extends in the x-direction along the magnetoresistive effect element. The magnetoresistive effect element is disposed offset with respect to the center position of the magnetic member in the y-direction. Magnetic flux to be detected is collected by a magnetic member and current is made to flow in the magnetic member in accordance with the resistance value of the magnetoresistive effect element, achieving closed loop control. The magnetic member functions both as a magnetism collection function and as a cancel coil, which reduces the number of elements required, and which also achieves a reduction in size and cost.

A control device configured to communicate with a first projector which projects a first image in a first projection area, and a second projector which projects a second image in a second projection area having a first overlap area overlapping the first projection area to make the first projector and the second projector perform an edge blending process includes a reception section for receiving input of designation information including a direction in which an overlap width, a generation section for generating first overlap information including information representing first side in the first overlap area and information representing the overlap width of the first overlap area, and second overlap information including information representing second side in the first overlap area and the information, and a transmission section for transmitting the first overlap information to the first projector, and the second overlap information to the second projector.

Provided are magnetoresistance effect element and a Heusler alloy in which an amount of energy required to rotate magnetization can be reduced. The magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, in which at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy in which a portion of elements of an alloy represented by Co.sub.2Fe.sub.Z.sub. is substituted with a substitution element, in which Z is one or more elements selected from the group consisting of Mn, Cr, Al, Si, Ga, Ge, and Sn, and satisfy 2.3+, <, and 0.5<<1.9, and the substitution element is an element different from the Z element and has a smaller magnetic moment than Co.

To provide a magnetoresistance effect element that can further increase an MR ratio (Magnetoresistance ratio) and an RA (Resistance Area product).

The magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1):

Co.sub.2Fe.sub.X.sub.(1)

(in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and and represent numbers that satisfy 2.3+, <, and 0.5<<1.9).

A control device configured to communicate with a first projector which projects a first image in a first projection area, and a second projector which projects a second image in a second projection area having a first overlap area overlapping the first projection area to make the first projector and the second projector perform an edge blending process includes a reception section for receiving input of designation information including a direction in which an overlap width, a generation section for generating first overlap information including information representing first side in the first overlap area and information representing the overlap width of the first overlap area, and second overlap information including information representing second side in the first overlap area and the information, and a transmission section for transmitting the first overlap information to the first projector, and the second overlap information to the second projector.

Systems and methods include determining energy usage of a residence from a current that flows through a first main conductor and a second main conductor that transport the current into the residence. Embodiments of the present disclosure relate to sensors (130a-b) that monitor magnetic fields (150a-b) generated by the first and second main conductors (120a-b). After a resistive load (210a-b) is added for an electrical path in the residence, the first and second magnetic fields (150a-b) may be converted to generate first and second calibrating currents. A first prototype current is corrected to eliminate the influence of the second magnetic field (150b) onto the first magnetic field (150a) and a second prototype current is corrected to eliminate the influence of the first magnetic field (150a) onto the second magnetic field (150b). The energy usage of the residence is determined from the corrected currents.