The present disclosure provides a method of monitoring the magnetic field in which a magnetic sensor is operating in to ensure that the sensor is operating within its defined magnetic window. For example, the method uses the sensor output of either a multi-turn sensor, or some other magnetoresistive sensor that is being used in conjunction with the multi-turn sensor, for example, a magnetic single turn sensor or a second multi-turn sensor, to monitor the operating magnetic field.

A magnetic distribution detection method includes the steps of providing a magnetic sensor and a sample, selecting a multiple of measuring points on the sample, sensing the measuring points by the magnetic sensor, obtaining a multiple of sense data and a series of the heights of the magnetic sensor from each measuring point, using a signal decomposition algorithm to convert these sense data into data groups, and selecting one of the data groups as the magnetic distribution data of the sample.

The techniques described are applicable to closed-loop magnetic multi-turn sensors including giant magnetoresistance (GMR-MT) sensors as well as tunnel magnetoresistive (TMR) multi-turn sensors. Techniques, e.g., lithography techniques, are described to form crossings so that a distortion of an ideal shape is reduced or minimized. Another aspect describes techniques to modify the material thickness and/or magnetic properties in such an area of the crossing. Yet another aspect describes techniques to locally weaken the applied field in the area of the crossing to prevent nucleation events in this area. The techniques described are applicable to closed-loop magnetic multi-turn sensors including giant magnetoresistance (GMR-MT) sensors as well as tunnel magnetoresistive (TMR) multi-turn sensors.

A spin element includes an element portion including a first ferromagnetic layer, a conducting portion that extends in a first direction as viewed in a lamination direction of the first ferromagnetic layer and faces the first ferromagnetic layer, and a current path extending from the conducting portion to a semiconductor circuit and having a resistance adjusting portion between the conducting portion and the semiconductor circuit, wherein the resistance value of the resistance adjusting portion is higher than the resistance value of the conducting portion, and the temperature coefficient of the volume resistivity of a material forming the resistance adjusting portion is lower than the temperature coefficient of the volume resistivity of a material forming the conducting portion.

A magnetoresistance effect element includes a underlayer, a protective layer, a laminated body located between the underlayer and the protective layer and including a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer in order from a side closest to the underlayer, and an intermediate layer located between the underlayer and the first ferromagnetic layer, or between the second ferromagnetic layer and the protective layer, wherein, one ferromagnetic layer selected from the first ferromagnetic layer and the second ferromagnetic layer and be in contact with the intermediate layer is a Heusler alloy having a Co basis, and a main component of the intermediate layer is an element other than Co among elements constituting the Heusler alloy having the Co basis.

In an image acquisition system, a distortion distribution is easily measured in a wide range. A standard image of magnetic domain of a sample serving as a standard is acquired by radiation of light using a standard external magnetic field which serves as a standard, a plurality of magnetic domain images are acquired in a state where an external magnetic field is applied while being changed, a plurality of subtraction images obtained by subtracting the standard image of magnetic domain from each of the plurality of magnetic domain images are acquired, a magnetization reversal area in which a magnetic domain is reversed is extracted from each of the plurality of subtraction images, and a composite image having a plurality of magnetization reversal areas is acquired by compositing the plurality of subtraction images each having the magnetization reversal area.

Position sensing units, comprising a magnetic assembly (MA) having a width W measured along a first direction and a height H measured along a second direction and including at least three magnets having respective magnetic polarizations that define along the first direction at least a left MA domain, a middle MA domain and a right MA domain, wherein the magnetic polarizations of each MA domain are different, and a magnetic flux measuring device (MFMD) for measuring a magnetic flux B, wherein the MA moves relative to the MFMD along the first direction within a stroke L that fulfils 1 mm≤L≤100 mm, stroke L beginning at a first point x.sub.0 and ending at a final point x.sub.max, and wherein a minimum value D.sub.min of an orthogonal distance D, measured along the second direction between a particular MA domain and the MFMD, fulfills L/D.sub.min>10.

A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer. The nonmagnetic layer is between the first ferromagnetic layer and the second ferromagnetic layer. At least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy layer. The nonmagnetic layer includes a first region and a second region in a plane. Both of the first region and the second region are formed of a metal. The second region is different in constituent material from the first region. The second region has a crystal structure of a body-centered cubic lattice structure (bcc).

Aspects of this disclosure relate to a resettable closed-loop multi-turn magnetic sensor. In one aspect, the sensor includes a nanowire forming a plurality of loops, a plurality of domain orientation sensors configured to detect locations of a pair of domain walls within the nanowire, and an initialization circuit configured to inject the pair of domain walls into the nanowire. The nanowire forms a closed-loop via a bridge crossing connecting two of the loops.

A magnetoresistance effect element includes a underlayer, a protective layer, a laminated body located between the underlayer and the protective layer and including a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer in order from a side closest to the underlayer, and an intermediate layer located between the underlayer and the first ferromagnetic layer, or between the second ferromagnetic layer and the protective layer, wherein, one ferromagnetic layer selected from the first ferromagnetic layer and the second ferromagnetic layer and in contact with the intermediate layer is a Heusler alloy having a Co basis, and a main component of the intermediate layer is an element other than Co among elements constituting the Heusler alloy having the Co basis.