A spin element includes an element portion including a first ferromagnetic layer, a conducting portion that extends in a first direction as viewed in a lamination direction of the first ferromagnetic layer and faces the first ferromagnetic layer, and a current path extending from the conducting portion to a semiconductor circuit and having a resistance adjusting portion between the conducting portion and the semiconductor circuit, wherein the resistance value of the resistance adjusting portion is higher than the resistance value of the conducting portion, and the temperature coefficient of the volume resistivity of a material forming the resistance adjusting portion is lower than the temperature coefficient of the volume resistivity of a material forming the conducting portion.

A magnetic domain wall movement element according to the present embodiment includes a magnetoresistance effect element that has a reference layer, a nonmagnetic layer, and a magnetic domain wall movement layer in order from a side closer to a substrate; and a first magnetization fixed layer and a second magnetization fixed layer which are each in contact with the magnetic domain wall movement layer and are separated from each other, wherein the magnetic domain wall movement layer includes a plurality of ferromagnetic layers and a plurality of insertion layers sandwiched between the plurality of ferromagnetic layers, wherein the ferromagnetic layer contains Co and Fe and has perpendicular magnetic anisotropy, and wherein, when writing is performed, a write current is allowed to flow between the first magnetization fixed layer and the second magnetization fixed layer along the magnetic domain wall movement layer.

The present disclosure provides a magnetic multi-turn sensor comprising a continuous coil of magnetoresistive elements and a method of manufacturing said sensor. The continuous coil is formed on a substrate such as a silicon wafer that has been fabricated so as to form a trench and bridge arrangement that enables the inner and outer spiral to be connected without interfering with the magnetoresistive elements of the spiral winding in between. Once the substrate has been fabricated with the trench and bridge arrangement, a film of the magnetoresistive material can be deposited to form a continuous coil on the surface of the substrate, wherein a portion of the coil is formed in the trench and a portion of the coil is formed on the bridge.

A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a nonmagnetic layer that is disposed between the first ferromagnetic layer and the second ferromagnetic layer, and an insertion layer that is disposed at least one of a position between the first ferromagnetic layer and the nonmagnetic layer and a position between the second ferromagnetic layer and the nonmagnetic layer, in which the nonmagnetic layer is composed of an oxide containing Mg and Ga, and the insertion layer is a ferromagnetic component containing Ga.

A rotation detection apparatus includes a magnetic field generation source, a spin valve element, and a calculator. The magnetic field generation source is rotatable while generating a magnetic field, and has a temperature coefficient of residual magnetic flux density having an absolute value of 0.1%/° C. or less. The spin valve element includes a magnetic layer configured to generate a movement of a magnetic domain wall in accordance with a change in direction of the magnetic field associated with a rotation of the magnetic field generation source. The calculator is configured to detect a change in resistance of the spin valve element caused by the movement of the magnetic domain wall and to calculate the number of rotations or a rotation angle of the magnetic field generation source.

A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a first non-magnetic layer; and a second non-magnetic layer, wherein, the first ferromagnetic layer and the second ferromagnetic layer are formed so that at least one of them includes a Heusler alloy layer, the first non-magnetic layer is provided between the first ferromagnetic layer and the second ferromagnetic layer, the second non-magnetic layer is in contact with any surface of the Heusler alloy layer and has a discontinuous portion with respect to a lamination surface, and the second non-magnetic layer is made of a material different from that of the first non-magnetic layer and is a (001)-oriented oxide containing Mg.

In an image acquisition system, a distortion distribution is easily measured in a wide range. A standard image of magnetic domain of a sample serving as a standard is acquired by radiation of light using a standard external magnetic field which serves as a standard, a plurality of magnetic domain images are acquired in a state where an external magnetic field is applied while being changed, a plurality of subtraction images obtained by subtracting the standard image of magnetic domain from each of the plurality of magnetic domain images are acquired, a magnetization reversal area in which a magnetic domain is reversed is extracted from each of the plurality of subtraction images, and a composite image having a plurality of magnetization reversal areas is acquired by compositing the plurality of subtraction images each having the magnetization reversal area.

Voltage-controlled spin field effect transistors (“spin transistors”) and methods for their use in switching applications are provided. In the spin transistors, spin current is transported from a spin injection contact to a spin detection contact through a multiferroic antiferromagnetic channel via magnon propagation. The spin current transport is modulated by the application of a gate voltage that increases the number of domain boundaries the multiferroic antiferromagnetic material.

Aspects of this disclosure relate to a resettable closed-loop multi-turn magnetic sensor. In one aspect, the sensor includes a nanowire forming a plurality of loops, a plurality of domain orientation sensors configured to detect locations of a pair of domain walls within the nanowire, and an initialization circuit configured to inject the pair of domain walls into the nanowire. The nanowire forms a closed-loop via a bridge crossing connecting two of the loops.

The present disclosure provides a device for initializing a multi-turn sensor that initializes the sensor almost instantaneously, thereby consuming very little energy. The initialisation device is provided in the form of a conductor that is placed a small distance above or below the sensor spiral, the conductor being configured so that it crosses at least two opposing corners of the spiral. A current is then applied to the conductor to generate a magnetic field in the corner sections of the spiral to nucleate domain walls. Once the domain walls have been nucleated, the external magnetic field will drive the pairs of domain walls away from each other towards the adjacent corners, changing the magnetic alignment of the tracks as they pass through. As such, the spiral can be initialised very quickly by applying a current to the conductor in the correct direction.