A system and method for an acoustically driven ferromagnetic resonance (ADFMR) based sensor including: a power source, that provides an electrical signal to power the system; and an ADFMR circuit, sensitive to electromagnetic fields, wherein the ADFMR circuit comprises an ADFMR device. The system functions to detect and measure external electromagnetic (EM) fields by measuring a perturbation of the electrical signal through the ADFMR circuit due to the EM fields.

A magnetostrictive-type sensor temperature-detecting circuit configured to be used in a magnetostrictive-type sensor including an applied stress-detecting coil, and a driving section to output an alternating voltage, excite the coil with a resulting alternating electric current, and switch flow directions of the electric current flowing in the coil in response to switching voltage polarities of the output alternating voltage, to detect a temperature of the coil in the sensor. This temperature-detecting circuit includes an alternating electric current direction switching time-detecting section to detect an amount of time from when the voltage polarities of the output alternating voltage are switched until when the flow directions of the electric current flowing in the coil are switched, and a temperature-computing section to compute the temperature of the coil on the basis of the amount of time detected by the alternating electric current direction switching time-detecting section.

A magnetostrictive-type sensor temperature-detecting circuit configured to be used in a magnetostrictive-type sensor including an applied stress-detecting coil, and a driving section to output an alternating voltage, excite the coil with a resulting alternating electric current, and switch flow directions of the electric current flowing in the coil in response to switching voltage polarities of the output alternating voltage, to detect a temperature of the coil in the sensor. This temperature-detecting circuit includes an alternating electric current direction switching time-detecting section to detect an amount of time from when the voltage polarities of the output alternating voltage are switched until when the flow directions of the electric current flowing in the coil are switched, and a temperature-computing section to compute the temperature of the coil on the basis of the amount of time detected by the alternating electric current direction switching time-detecting section.

A stress distribution measurement device includes: a first magnetostrictive sensor and a second magnetostrictive sensor each including an excitation coil that excites AC magnetism in a measurement target using alternating current, and a detection coil to which alternating current is induced due to the AC magnetism flowing in the measurement target; an excitation circuit that applies a first excitation voltage to the excitation coil of the first magnetostrictive sensor and applies a second excitation voltage to the excitation coil of the second magnetostrictive sensor, the second excitation voltage having a phase or a waveform different from the first excitation voltage; and a detection circuit that includes a first detector that performs synchronous detection of current flowing in the detection coil of the first magnetostrictive sensor based on the first excitation voltage and a second detector that performs synchronous detection of current flowing in the detection coil of the second magnetostrictive sensor based on the second excitation voltage.

Magnetoelectric devices based on piezoelectric/magnetostrictive bilayers are provided. Also provided are methods of using the devices to modulate or to sense the magnetization of the magnetostrictive material. The devices include an island of magnetostrictive material that is strain-coupled to a thin layer of a piezoelectric material at an interface. A bottom electrode is placed in electrical communication with one surface of the piezoelectric film, and an unpaired top electrode is placed in electrical communication with a second, opposing surface of the piezoelectric film.

Encapsulation packages for stent-deployable monitoring devices formed of resonator sensors and allowing for magnetic biasing elements that exhibit a targeted impact on the mechanical characteristics of a stent are provided. Encapsulation packages are formed of different types and include a longitudinal shield and curved end on profile for aligning the shield within the deployable stent, the shield having perforations such that a resonator can be positioned adjacent the perforations for allowing particulate within the stent to collect and be measured by the resonator during deployment.

Encapsulation packages for stent-deployable monitoring devices formed of resonator sensors and allowing for magnetic biasing elements that exhibit a targeted impact on the mechanical characteristics of a stent are provided. Encapsulation packages are formed of different types and include a longitudinal shield and curved end on profile for aligning the shield within the deployable stent, the shield having perforations such that a resonator can be positioned adjacent the perforations for allowing particulate within the stent to collect and be measured by the resonator during deployment.

Methods and apparatus for an integrated circuit having first and second domains with an insulative material electrically isolating the first and second domains. A conductive shield is disposed between the first and second domains and a current sensor has at least one magnetoresistive element proximate the shield to detect current flow in the shield due to breakdown of the insulative material.

Methods and apparatus for an integrated circuit having first and second domains with an insulative material electrically isolating the first and second domains. A conductive shield is disposed between the first and second domains and a current sensor has at least one magnetoresistive element proximate the shield to detect current flow in the shield due to breakdown of the insulative material.

A method for stress-induced magnetic field signal acquisition and stress measurement is disclosed. The method can include the following steps: a1, conducting AC magnetization on a to-be-tested structure by using an AC magnetic field with preset frequencies and strengths, and acquiring the excitation magnetic field signals in at least one cycle; a2, subtracting the excitation magnetic field signals in at least one cycle of a stress-free sample having the same material as the to-be-tested structure from the excitation magnetic field signals acquired in step a1 to obtain a stress-induced magnetic field signals of the to-be-tested structure; a3, quantitatively assessing the stresses in the to-be-tested structure by comparing the mean values of the stress-induced magnetic field signals acquired in step a2 with the pre-calibrated relationship of stresses and the mean values of the stress-induced magnetic field signals for the material of the to-be-tested structure.