Patent classifications
G01T1/24
OPTICAL SYSTEM AND CORRESPONDING OPTICAL METHOD
In one aspect, an optical system is disclosed. In some embodiments, the optical system includes an optical waveguide, and at least two coupling means forming at least one confocal point being located within the optical waveguide, where a first coupling means of the at least two coupling means has a first focal length, and a second coupling means of the at least two coupling means has a second focal length. In some examples, the first coupling means is configured to couple and/or focus incident light to the optical waveguide, and the second coupling means is configured to emit and/or collimate light conveyed by the optical waveguide.
Radiation Detection Device and Radiographic Imaging Device Comprising Radiation Detection Device and Image Conversion Unit
Provided is a radiation detection device, comprising: a radiation detection unit consisting of two or more radiation detection elements each constituted by a pair of electrodes consisting of a first electrode and a second electrode and a radiation absorption layer that is sandwiched between the pair of electrodes, the two or more radiation detection elements being arranged in a surface direction of the radiation absorption layer; and one or more power supply units electrically connected to the first electrode, wherein the radiation detection unit comprises two or more of the first electrodes to which mutually different voltages are applied.
Radiation Detection Device and Radiographic Imaging Device Comprising Radiation Detection Device and Image Conversion Unit
Provided is a radiation detection device, comprising: a radiation detection unit consisting of two or more radiation detection elements each constituted by a pair of electrodes consisting of a first electrode and a second electrode and a radiation absorption layer that is sandwiched between the pair of electrodes, the two or more radiation detection elements being arranged in a surface direction of the radiation absorption layer; and one or more power supply units electrically connected to the first electrode, wherein the radiation detection unit comprises two or more of the first electrodes to which mutually different voltages are applied.
A PREAMPLIFIER CIRCUIT
In accordance with an example embodiment, a preamplifier circuit is provided, the preamplifier circuit comprising an amplifier arranged in a first current path between an input node and an output node of the preamplifier circuit; a feedback capacitor arranged in a second current path between said input node and said output node; a feedback circuit having an adjustable transfer function arranged in a third current path between said input node and said output node; a reset switch arranged in said third current path to enable selectively coupling the output of the feedback circuit to the input of the amplifier and decoupling the output of the feedback circuit from the input of the amplifier; and a loop controller arranged to selectively, in dependence of a voltage in the preamplifier circuit, one of open the reset switch to set the preamplifier circuit in a normal operating mode and close the reset switch to set the preamplifier circuit in a reset mode, wherein the loop controller is arranged to adjust the transfer function of the feedback circuit at least in part in dependence of the current operating mode of the preamplifier circuit.
A PREAMPLIFIER CIRCUIT
In accordance with an example embodiment, a preamplifier circuit is provided, the preamplifier circuit comprising an amplifier arranged in a first current path between an input node and an output node of the preamplifier circuit; a feedback capacitor arranged in a second current path between said input node and said output node; a feedback circuit having an adjustable transfer function arranged in a third current path between said input node and said output node; a reset switch arranged in said third current path to enable selectively coupling the output of the feedback circuit to the input of the amplifier and decoupling the output of the feedback circuit from the input of the amplifier; and a loop controller arranged to selectively, in dependence of a voltage in the preamplifier circuit, one of open the reset switch to set the preamplifier circuit in a normal operating mode and close the reset switch to set the preamplifier circuit in a reset mode, wherein the loop controller is arranged to adjust the transfer function of the feedback circuit at least in part in dependence of the current operating mode of the preamplifier circuit.
SENSOR LAYOUT FOR DIRECT CONVERTER DETECTOR
A system and method include an array of sensors electrically coupled to a material capable of converting a gamma ray to electrical charge, where distances between a center of a first sensor and centers of each sensor immediately-adjacent to the first sensor are substantially equal. Signals are collected from each sensor immediately-adjacent to the first sensor, and one of a plurality of logical sub-pixels of the first sensor is determined based on the signals collected from each sensor immediately-adjacent to the first sensor.
SENSOR LAYOUT FOR DIRECT CONVERTER DETECTOR
A system and method include an array of sensors electrically coupled to a material capable of converting a gamma ray to electrical charge, where distances between a center of a first sensor and centers of each sensor immediately-adjacent to the first sensor are substantially equal. Signals are collected from each sensor immediately-adjacent to the first sensor, and one of a plurality of logical sub-pixels of the first sensor is determined based on the signals collected from each sensor immediately-adjacent to the first sensor.
DEVICES, SYSTEMS, AND METHODS FOR DETECTING RADIATION WITH SCHOTTKY DIODES FOR ENHANCED IN-CORE MEASUREMENTS
An in-core detector configured to measure a power distribution in a nuclear reactor is disclosed herein. The in-core detector includes a housing configured to be placed within a predetermined location of the nuclear reactor and a plurality of a gamma detectors. Each gamma detector of the plurality of gamma detectors includes a Schottky diode including an active semiconductor region and a Schottky contact, an Ohmic contact, a photoelectron source material configured to transfer electrons to the active region upon contact with gamma radiation, and a first and second lead. The plurality of gamma detectors are positioned within the housing such that each gamma detector of the plurality of gamma detectors is radially offset relative to an adjacent gamma detector of the plurality of gamma detectors, such that the first and second leads of each gamma detector are offset relative to the first and second leads of the adjacent gamma detector.
Radiation detector, radiographic imaging device, and radiation detector manufacturing method
A radiation detector includes a flexible substrate, plural pixels provided on the substrate and each including a photoelectric conversion element, a scintillator stacked on the substrate, and a bending suppression member configured to suppress bending of the substrate. The bending suppression member has a rigidity that satisfies R≥X.sup.2/2Z.sub.L wherein X is a pixel size, Z.sub.L is a critical deformation amount of the pixel through bending of the substrate, and R is a radius of curvature of bending occurring in the substrate due to the weight of the scintillator.
Halide-Semiconductor Radiation Detector
A radiation detector includes a halide semiconductor sandwiched a cathode and an anode and a buffer layer between the halide semiconductor and the anode. The anode comprises a composition selected from: (a) an electrically conducting inorganic-oxide composition, (b) an electrically conducting organic composition, and (c) an organic-inorganic hybrid composition. The buffer layer comprises a composition selected from: (a) a composition distinct from the composition of the anode and including at least one other electrically conducting inorganic-oxide composition, electrically conducting organic composition, or organic-inorganic hybrid composition; (b) a semi-insulating layer selected from: (i) a polymer-based composition; (ii) a perovskite-based composition; (iii) an oxide-semiconductor composition; (iv) a polycrystalline halide semiconductor; (v) a carbide, nitride, phosphide, or sulfide semiconductor; and (vi) a group II-VI or III-V semiconductor; and (c) a component metal of the halide-semiconductor.