Patent classifications
G01T1/24
Analysis method and X-ray fluorescence analyzer
An analysis method using an X-ray fluorescence analyzer is provided in which an X-ray spectrum is acquired by detecting a secondary X-ray emitted from a specimen when the specimen is irradiated with a primary X-ray. The analysis method includes: acquiring a first X-ray spectrum obtained, with a take-off angle of the secondary X-ray being set as a first take-off angle; acquiring a second X-ray spectrum obtained, with a take-off angle of the secondary X-ray being set as a second take-off angle that is different from the first take-off angle; and obtaining information on an element in a depth direction of a specimen based on the first X-ray spectrum and the second X-ray spectrum.
Analysis method and X-ray fluorescence analyzer
An analysis method using an X-ray fluorescence analyzer is provided in which an X-ray spectrum is acquired by detecting a secondary X-ray emitted from a specimen when the specimen is irradiated with a primary X-ray. The analysis method includes: acquiring a first X-ray spectrum obtained, with a take-off angle of the secondary X-ray being set as a first take-off angle; acquiring a second X-ray spectrum obtained, with a take-off angle of the secondary X-ray being set as a second take-off angle that is different from the first take-off angle; and obtaining information on an element in a depth direction of a specimen based on the first X-ray spectrum and the second X-ray spectrum.
RADIATION DETECTOR WITH BUTTED ABSORBER TILES WITHOUT DEAD AREAS
Example embodiments generally relate to a detector for electromagnetic radiation such as a detector comprising a first, pixelated electrode layer comprising a plurality of electrode pixels, a first layer comprising a plurality of tiles comprising a material configured to absorb and convert the electromagnetic radiation, and a second electrode layer, as well as a method of producing a detector for electromagnetic radiation, comprising providing a first, pixelated electrode layer comprising a plurality of electrode pixels, applying a plurality of tiles comprising a material configured to absorb and convert the electromagnetic radiation on the first, pixelated electrode layer, and applying a second electrode layer on the first layer.
RADIATION DETECTOR WITH BUTTED ABSORBER TILES WITHOUT DEAD AREAS
Example embodiments generally relate to a detector for electromagnetic radiation such as a detector comprising a first, pixelated electrode layer comprising a plurality of electrode pixels, a first layer comprising a plurality of tiles comprising a material configured to absorb and convert the electromagnetic radiation, and a second electrode layer, as well as a method of producing a detector for electromagnetic radiation, comprising providing a first, pixelated electrode layer comprising a plurality of electrode pixels, applying a plurality of tiles comprising a material configured to absorb and convert the electromagnetic radiation on the first, pixelated electrode layer, and applying a second electrode layer on the first layer.
SEMICONDUCTOR RADIATION DETECTOR
Disclosed herein is a radiation detector comprising: an electronics layer comprising a first set of electric contacts and a second set of electric contacts; a radiation absorption layer configured to absorb radiation; a semiconductor substrate, portions of which extend into the radiation absorption layer in a direction of thickness thereof, the portions forming a first set of electrodes and a second set of electrodes; wherein the first set of electrodes and the second set of electrodes are interdigitated; wherein the semiconductor substrate comprises a p-n junction that separates first set of electrodes from the second set of electrodes; wherein the electronics layer and the semiconductor substrate are bonded such that the first set of electrodes are electrically connected to the first set of electric contacts and the second set of electrodes are electrically connected to the second set of electric contacts.
READOUT AND PROCESSING ARRANGEMENT IN A SENSOR SYSTEM
A sensor system includes a detector substrate, multiple readout substrates and a processing substrate. The detector substrate has a detector mounted thereon. Each of the readout substrates is disposed perpendicular to the detector substrate, and has corresponding readout circuitry mounted thereon. The processing substrate is disposed perpendicular to each of the readout substrates and parallel to the detector substrate, and has one or more processing elements mounted thereon. Electrical connections between component nodes on the detector substrate and corresponding readout substrates are made using connectors or right-angled solder joints created using a solder reflow process. Electrical connections between component nodes on the processing substrate and corresponding readout substrates are also made using connectors or right-angled solder joints created using a solder reflow process. The geometric arrangement of the substrates allows for high density of pixelation on the detector. In an embodiment, the sensor system is a radiation detector system.
Dynamic noise shaping in a photon counting system
In described examples, a charge sensitive amplifier (CSA) generates an integrated signal in response to a current signal. A high pass filter is coupled to the CSA and receives the integrated signal and an inverse of an event signal, the high pass filter generates a coarse signal. An active comparator is coupled to the high pass filter and receives the coarse signal and a primary reference voltage signal, the active comparator generates the event signal.
WIRELESS GAMMA AND/OR HARD X-RAY RADIATION DETECTOR
In an example, a wireless gamma and or hard X-ray radiation detector includes a bulk semiconductor crystal, electrical contacts, a bias circuit, and a terahertz (THz) electromagnetic (EM) wave receiver. The bulk semiconductor crystal and includes indium antimonide (InSb), cadmium telluride (CdTe), or cadmium zinc telluride (CdZnTe). The electrical contacts are coupled to two facets of the bulk semiconductor crystal. The bias circuit is electrically coupled to the bulk semiconductor crystal through the electrical contacts. The THz EM wave receiver is positioned to detect THz radiation emitted by the bulk semiconductor crystal.
PHOTON COUNTING DETECTOR
A method, a system, a device, and a computer program produce for photon detection is disclosed. The method includes receiving, by a plurality of anodes, a photon via one or more of the plurality of anodes; measuring respective voltages of the photon at each of the plurality of anodes; counting incidents in which the photon is detected by more than one of the plurality of anodes based on the measuring; and outputting information regarding a counted number of incidents in which the photon is detected by more than one of the plurality of anodes, wherein the information regarding the courted number of incidents in which the photon is detected by more than one of the plurality of anodes is used as part of a production of an image associated with the received photon.
Perovskite-based detectors with increased adhesion
A detector is for electromagnetic radiation. In an embodiment, the detector includes a first, pixelated electrode layer, a second electrode, and a first layer including at least one first perovskite, located between the first, pixelated electrode layer and the second electrode. An embodiment further relates to a method for manufacturing a corresponding detector.