An EUV lighting device for metrology and inspection of an EUV mask in an EUV exposure process of a semiconductor device manufacturing process includes: an EUV light source for outputting EUV light with a wavelength ranging from 5 nm to 15 nm; and a multilayer reflection zone plate having an EUV reflection multilayer film, which is a planar substrate, and a zone plate pattern. The EUV lighting device radiates EUV light output from the EUV light source to the multilayer reflection zone plate, acquires 1.sup.st diffraction light reflected, and creates EUV illumination light.

In a method for producing an optical element for an EUV projection exposure apparatus, a shaping layer (22.sub.1) is applied onto a substrate (20) so as to have a surface roughness of at most 0.5 nm rms directly after the application of the shaping layer onto the substrate.

Provided are a sterilization device, an air filter, and a filtration system, which relate to the technical filed of sterilization equipment. The sterilization device includes an ultraviolet (UV) lamp module, two cover plates arranged opposite each other, and two reflecting layers, where a flow chamber which allows the air to flow therein is formed between the two cover plates, and each of the two cover plates is provided with at least one air vent communicated with the flow chamber; wherein two opposite surfaces of the two cover plates respectively have the two reflecting layers disposed thereon, and at least one of the two reflecting layers is a diffuse reflection layer; and the UV lamp module is disposed on the cover plate and is used to emit UV light into the flow chamber.

An extreme ultraviolet light generation apparatus includes a first chamber, an EUV light concentrating mirror arranged in the first chamber and configured to concentrate extreme ultraviolet light generated at a first point in the first chamber onto a second point, a first planar mirror arranged on an optical path of the extreme ultraviolet light reflected by the EUV light concentrating mirror, a second chamber accommodating the first planar mirror, a flexible tube arranged between the first and second chambers, an alignment optical system arranged at the first chamber and configured to cause alignment light to be incident on the EUV light concentrating mirror, a detector arranged at the second chamber and configured to detect the alignment light reflected by the EUV light concentrating mirror, an actuator configured to change posture of the first planar mirror, and a processor configured to control the actuator based on output of the detector.

A mirror, e.g. for a microlithographic projection exposure apparatus, includes an optical effective surface, a mirror substrate, a reflection layer stack for reflecting electromagnetic radiation incident on the optical effective surface, at least one first electrode arrangement, at least one second electrode arrangement, and an actuator layer system situated between the first and the second electrode arrangements. The actuator layer system is arranged between the mirror substrate and the reflection layer stack, has a piezoelectric layer, and reacts to an electrical voltage applied between the first and the second electrode arrangements with a deformation response in a direction perpendicular to the optical effective surface. The deformation response varies locally by at least 20% in PV value for a predefined electrical voltage that is spatially constant across the piezoelectric layer.

An extreme ultra violet (EUV) light source apparatus includes a metal droplet generator, a collector mirror, an excitation laser inlet port for receiving an excitation laser, a first mirror configured to reflect the excitation laser that passes through a zone of excitation, and a second mirror configured to reflect the excitation laser reflected by the first mirror.

A mirror structure includes an insulator layer and a first conductive layer disposed on the insulator layer. The first conductive layer includes a first non-conductive film disposed on the insulator layer. The first non-conductive film includes one or more first conductive segments. The mirror structure also includes a reflective layer disposed on the first conductive layer and an electro optical layer disposed on the reflective layer. The mirror structure further includes a second conductive layer disposed on the electro optical layer. The second conductive layer includes a second non-conductive film disposed on the electro optical layer. The second non-conductive film includes one or more second conductive segments.

The present disclosure provides a solar reflecting film and a preparation method thereof. The solar reflecting film includes a substrate and a functional layer stacked on each other. The functional layer includes a first reflecting layer, a barrier layer, and a second reflecting layer stacked on the substrate in order. The barrier layer includes a first barrier layer and a second barrier layer stacked on the first barrier layer. The first barrier layer is metal fluoride, inorganic non-metallic oxide, metal oxide or a combination thereof. The second barrier layer is metal oxides, metal nitrides, semiconductor doped compounds or a combination thereof. And a material of the first barrier layer is at least partially different from that of the second barrier layer.

Methods and systems are provided for ultra-violet curing, and in particular, for ultra-violet curing of optical fiber surface coatings. In one example, a curing device includes a first elliptic cylindrical reflector, with a second elliptic cylindrical reflector housed within the first elliptic cylindrical reflector. The first elliptic cylindrical reflector and second elliptic cylindrical reflector have a co-located focus, and a workpiece to be cured by the curing device may be arranged at the co-located focus.

An optical arrangement, in particular to a lithography system, includes: a first component, in particular a carrying frame; a second component which is movable relative to the first component, in particular a mirror or a housing; and at least one stop having at least one stop face for limiting the movement of the second component in relation to the first component. The stop includes a metal foam for absorbing the kinetic energy of the second component when it strikes against the stop face. A method for repairing an optical arrangement of this kind after a shock load includes replacing at least one stop, in which the metal foam was compressed under the shock load, with a stop in which the metal foam is not compressed.