The present invention provides a color filter film manufacturing method and a color filer film. The color filter film manufacturing method of the present invention includes forming transparent photoresist layers in blue sub-pixel zones and forming first and second recesses respectively in red and green sub-pixel zones and subjecting bottoms thereof to a treatment for hydrophilicity/hydrophobicity. The difference of hydrophilicity/hydrophobicity between the bottoms of the first and second recesses and a surface of the photoresist layer, in combination with altitude differences, makes the red and green quantum dot materials to respectively form red and green quantum dot layers in the first and second recesses through autonomous flowing. The red and green quantum dot layers are excited by blue backlight source to respectively emit red light and green light, while the blue backlight source directly transmits through the transparent photoresist layers to give off blue light thereby providing three primary colors of red, green, and blue to achieve color displaying, increasing utilization of quantum dots, the effect of autonomous flowing of the quantum dot paste being made better for higher resolution and denser arrangement of pixels, and thus, making it better suitable for manufacture of high-resolution panels than ink-jet printing techniques.

A color filter array may include a plurality of color filters arranged two-dimensionally and configured to allow light of different wavelengths to pass therethrough. Each of the plurality of color filters includes at least one Mie resonance particle and a transparent dielectric surrounding the at least one Mie resonance particle.

The present disclosure provides a quantum dot display apparatus. By adding quantum dot display technology of the present disclosure can provide sophisticated quantum dot patterns in the color filter layer and have higher resolution, color saturation and color gamut of the display apparatus, the well structure and manufacture is simple. The disclosure also provides a manufacturing method of a quantum dot display apparatus, the methods includes exposure, coating, developing process of the existing color filter to contain the surface modified red and green quantum dot resin composition with more sophisticated patterns, and making high resolution, color saturation and color gamut quantum dot display apparatus, the material preparation and fabrication process of this manufacturing method is simple, less waste of materials, low production cost, suitable for mass production.

The present invention provides a quantum dot display device and a manufacturing method thereof. The quantum dot display device includes a base substrate, a backlight, a color conversion layer disposed on a side of the backlight away from the base substrate, and an electro-fluidic shutter disposed on a side of the color conversion layer away from the backlight. The electro-fluidic shutter includes a plurality of shutter units, and a sealing portion is disposed between adjacent shutter units. Contrast of the quantum dot display device under strong ambient light is improved, which is beneficial for application in outdoor advertising displays and the like.

a composite barrier film, comprising: an ultra-thin barrier film, wherein the ultra-thin barrier film is capable of being water-resistant and oxygen-resistant; and a protection film, being attached on the ultra-thin barrier film for increasing the stiffness of the ultra-thin barrier film, wherein a thickness of the ultra-thin barrier film is less than a thickness of the protection film.

A sputtering system may include a substrate. The sputtering system may include at least one target. The at least one target may include at least one coating material to coat at least one layer onto the substrate. The at least one coating material may be sputtered onto the substrate in a presence of an inert gas. The inert gas may include argon gas and helium gas.

A quantum dot including fluorescent crystalline nanoparticle, wherein surface of the quantum dot is modified with a ligand containing fluorine. The quantum dots include fluorescent crystalline nanoparticles which have high stability and are less likely to agglomerate when added to a fluororesin.

A radiation suppression film includes a porous body containing a material transparent to a long wavelength infrared ray as a base material.

A device includes a substrate having a pattern of surface features on a surface thereof, and a layer including a material having an Epsilon-Near-Zero (ENZ) condition for a wavelength range. The layer extends on the surface of the substrate and along the pattern of surface features. Related devices and fabrication methods are also discussed.

An optical filter having a passband at least partially overlapping with a wavelength range of 800 nm to 1100 nm is provided. The optical filter includes a filter stack formed of hydrogenated silicon layers and lower-refractive index layers stacked in alternation. The hydrogenated silicon layers each have a refractive index of greater than 3 over the wavelength range of 800 mn to 1100 nm and an extinction coefficient of less than 0.0005 over the wavelength range of 800 nm to 1100 nm.