G02B5/207

COLOR FILTER UNIT AND METHOD OF MANUFACTURING THE SAME
20220137273 · 2022-05-05 ·

A color filter unit includes an upper substrate, a color filter layer on a lower surface of the upper substrate, and a quantum dot layer on a lower surface of the color filter layer and including a quantum dot layer material and an arrangement assistant defining a space in which the quantum dot layer material is arranged.

Color filter unit and display apparatus including the same
11770960 · 2023-09-26 · ·

A color filter unit having improved optical efficiency and color reproduction and a display apparatus including the color filter unit are provided. The display apparatus includes a first pixel, a second pixel, and a third pixel on a first substrate, the first pixel, the second pixel, and the third pixel are configured to emit light of different colors from one another, wherein each of the first pixel and the second pixel includes a display element, a light scattering layer corresponding to the display element, the light scattering layer comprising first scattering particles and first quantum dots, and a color conversion layer on the light scattering layer, the color conversion layer including second scattering particles and second quantum dots configured to convert incident light into light of a set color.

VARIABLE LIGHT TRANSMITTANCE ELEMENT, AND COLOR FILTER AND SMART WINDOW FOR DISPLAY DEVICE COMPRISING SAME
20220026606 · 2022-01-27 ·

The present invention relates to a variable light transmittance element including a variable light transmittance structure, wherein the variable light transmittance structure includes: a first electrode; a variable light transmittance layer made of a transparent semiconductor material in which metal nanoparticles are dispersed, and electrically connected to the first electrode; a second electrode; and an insulating layer interposed between the variable light transmittance layer and the second electrode, and also relates to a color filter for a display device and smart window including the same. The variable light transmittance element according to the present invention induces a change in the localized surface plasmon resonance (LSPR) state by applying a voltage to both ends of the variable light transmittance stack structure including the electrode/insulation layer/metal nanoparticle-containing transparent semiconductor layer, and thus the light transmittance and color of the metal nanoparticle-containing transparent semiconductor layer may be freely changed.

HIGH DYNAMIC RANGE OPTICAL SENSING DEVICE EMPLOYING BROADBAND OPTICAL FILTERS INTEGRATED WITH LIGHT INTENSITY DETECTORS
20220021828 · 2022-01-20 · ·

A high dynamic range image sensors enabled by integrating broadband optical filters with individual sensor pixels of a pixel array. The broadband optical filters are formed of engineered micro or nanostructures that exhibit large differences in transmittance, e.g. up to 5 to 7 orders of magnitude. Such high transmittance difference can be achieved by using a single layer of individually designed filters, which show varied transmittance as a result of the distinct absorption of various material and structures. The high transmittance difference can also be achieved by controlling the polarization of light and using polarization-sensitive structures as filters. With the presence of properly designed integrated nanostructures, broadband transmission spectrum with transmittance spanning several orders of magnitude can be achieved. This enables design and manufacturing of image sensors with high dynamic range which is crucial for applications including autonomous driving and surveillance.

OPTICAL ABSORPTION FILTER FOR AN INTEGRATED DEVICE

Apparatus and methods relating to attenuating excitation radiation incident on a sensor in an integrated device that is used for sample analysis are described. At least one semiconductor film of a selected material and crystal morphology is located between a waveguide and a sensor in an integrated device that is formed on a substrate. Rejection ratios greater than 100 or more can be obtained for excitation and emission wavelengths that are 40 nm apart for a single layer of semiconductor material.

Luminous body, light emitting film, light emitting diode and light emitting device having luminous body

A luminous body includes a first moiety including a plurality of first ligands combined to a surface of an inorganic emitting particle; and a second moiety including silsesquioxanes connected to a second ligand connected to one of the first ligands, wherein one of the first and second ligands is a polar ligand, and the other one of the first and second ligands is a non-polar ligand.

Color filter array having color filters, and image sensor and display device including the color filter array

A color filter array may include a plurality of color filters arranged two-dimensionally and configured to allow light of different wavelengths to pass therethrough. Each of the plurality of color filters includes at least one Mie resonance particle and a transparent dielectric surrounding the at least one Mie resonance particle.

COMPOSITION FOR THE MANUFACTURE OF AN OPHTALMIC LENS COMPRISING SEMI-CONDUCTIVE NANOPARTICLES

A polymerizable liquid composition including semi-conductive nanoparticles for the manufacture of ophthalmic lenses. Specifically, polymerizable composition has at least one monomer or oligomer; at least one catalyst for initiating the polymerization of the monomer or oligomer; and semi-conductive nanoparticles, which are dispersed in the monomer or oligomer. The absorbance through a 2-millimeter-thick layer of the polymerizable composition is higher than 0.5 for each light wavelength ranging from 350 to λ.sub.cut, λ.sub.cut being in the visible range, preferably in the range from 400 nm to 480 nm.

INTEGRATED PHOTODETECTING SEMICONDUCTOR OPTOELECTRONIC COMPONENT
20230084888 · 2023-03-16 ·

An integrated photodetecting semiconductor optoelectronic component for measuring the intensity of each of the two colour constituents of dichromatic light irradiating the optoelectronic component includes a first SPAD and a second SPAD that detect photons over a broad range of wavelengths. The component also includes a semiconductor optical longpass filter that at least partially covers an active surface area of the first SPAD. The longpass filter is permissive to a first one of the two colour constituents of the dichromatic light and blocking the second one of the two colour constituents of the dichromatic light. The component further includes electronic circuitry for the readout and processing of detection signals delivered by the first and second SPAD. The electronic circuitry is adapted to provide a first intensity output signal and a second intensity output signal via a differential analysis based on the detection signals delivered by the first and second SPAD.

PHOTOSENSOR AND BAND-PASS FILTER INCLUDED IN PHOTOSENSOR
20230136184 · 2023-05-04 ·

Provided is a photosensor that measures a state of a detection subject, the photosensor including a light source that emits irradiation light in a wavelength band including a specific peak wavelength to the detection subject, a band-pass filter that allows the irradiation light reflected by the detection subject to be selectively transmitted through the band-pass filter, a light receiver that receives the irradiation light transmitted through the band-pass filter, and a measuring device that measures the state of the detection subject by using the light received by the light receiver. The light source has a temperature characteristic in which the specific wavelength peak of the emitted irradiation light shifts by a first wavelength shift amount depending on an environmental temperature. The band-pass filter has a temperature characteristic in which the specific wavelength peak of the emitted irradiation light shifts by a second wavelength shift amount depending on the environmental temperature. A shape and a material of the band-pass filter are selected in such a manner that the second wavelength shift amount is equivalent to the first wavelength shift amount.