A stop, such as a numerical aperture stop, obscuration stop or false-light stop, for a lithography apparatus, includes a light-transmissive aperture and a stop element, in which or at which the aperture is provided. The stop element is opaque and fluid-permeable outside the aperture.

A catoptric system having a reference axis and including a reflective pattern-source (carrying a substantially one-dimensional pattern) and a combination of two optical reflectors disposed sequentially to transfer EUV radiation incident onto the first optical component to the pattern-source the substantially one-dimensional pattern of which is disposed in a curved surface. In one case, such combination includes only two optical reflectors (each may contain multiple constituent components). The combination is disposed in a fixed spatial and optical relationship with respect to the pattern-source, and represents an illumination unit (IU) of a 1D EUV exposure tool that additionally includes a projection optical sub-system configured to form an optical image of the pattern-source on an image plane with the use of only two beams of radiation. These only two beams of radiation originate at the pattern-source from the EUV radiation transferred onto the pattern-source.

A maskless, extreme ultraviolet (EUV) lithography scanner uses an array of microlenses, such as binary-optic, zone-plate lenses, to focus EUV radiation onto an array of focus spots (e.g. about 2 million spots), which are imaged through projection optics (e.g., two EUV mirrors) onto a writing surface (e.g., at 6X reduction, numerical aperture 0.55). The surface is scanned while the spots are modulated to form a high-resolution, digitally synthesized exposure image. The projection system includes a diffractive mirror, which operates in combination with the microlenses to achieve point imaging performance substantially free of geometric and chromatic aberration. Similarly, a holographic EUV lithography stepper can use a diffractive photomask in conjunction with a diffractive projection mirror to achieve substantially aberration-free, full-field imaging performance for high-throughput, mask-projection lithography. Maskless and holographic EUV lithography can both be implemented at the industry-standard 13.5-nm wavelength, and could potentially be adapted for operation at a 6.7-nm wavelength.

An optical lithography system for patterning semiconductor devices and a method of using the same are disclosed. In an embodiment, an apparatus includes an optical path; a prism disposed on the optical path; a lens disposed on the optical path; and a tunable mirror disposed on the optical path, the tunable mirror including a mirror having a concave surface at a front-side thereof; a rear support attached to a backside of the mirror; and a plurality of fine-adjustment screws extending from the rear support to the backside of the mirror.

The invention relates to a catadioptric medical imaging system (1), in particular a surgical microscope (2). During surgery, it may be necessary to gain more information about a surgical cavity (6), in particular the type of tissue (29) at the inside walls (4) of the surgical cavity (6). To solve this problem, the catadioptric medical imaging system (1) according to the invention comprises a camera device (8) and a convex catoptric mirror (20) adapted to be inserted into the surgical cavity (6). The catoptric mirror (20) is mounted on an arm (22) and spaced apart from the camera device (8).

An objective lens according to an aspect of the present disclosure includes a first element having a first surface to a fourth surface and a second element having a first planar surface and a second planar surface and being located on the specimen-side of the first element. The first surface is a transmissive planar surface located on the optical axis, the second surface is a reflective convex surface located on the optical axis, the third surface is a reflective concave surface located on the outer side of the first surface, and the fourth surface is a transmissive planar surface located on the outer side of the second surface. The first planar surface is a transmissive planar surface to be joined to the fourth surface and the second planar surface is a transmissive planar surface parallel to the first planar surface.

A beam delivery system according to an aspect of the present disclosure is used for an extreme ultraviolet light generation apparatus and includes a propagation mirror disposed on an optical path between a laser apparatus and a condensation optical system and configured to change the propagation direction of a pulse laser beam, and a curvature mirror disposed on an optical path between the propagation mirror and the condensation optical system and having a concave reflective surface configured to convert the pulse laser beam to be incident on the condensation optical system into a convergent beam. The curvature mirror has a focal length selected so that the beam spread angle of the pulse laser beam from the curvature mirror is constant irrespective of thermal deformation of the propagation mirror or constant with change in a predetermined allowable range irrespective of thermal deformation of the propagation mirror.

The present invention provides a local clean microenvironment near optical surfaces of an extreme ultraviolet (EUV) optical assembly maintained in a vacuum process chamber and configured for EUV lithography, metrology, or inspection. The system includes one or more EUV optical assemblies including at least one optical element with an optical surface, a supply of cleaning gas stored remotely from the one or more optical assemblies and a gas delivery unit comprising: a plenum chamber, one or more gas delivery lines connecting the supply of gas to the plenum chamber, one or more delivery nozzles configured to direct cleaning gas from the plenum chamber to a portion of the EUV assembly, and one or more collection nozzles for removing gas from the EUV optical assembly and the vacuum process chamber.

An optical assembly guides an output beam of a free electron laser to a downstream illumination-optical assembly of an EUV projection exposure apparatus. The optical assembly has first and a second GI mirrors, each with a structured reflection surface to be impinged upon by the output beam. A first angle of incidence on the first GI mirror is between one mrd and 10 mrad. A maximum first scattering angle is produced, amounting to between 50% and 100% of the first angle of incidence. A second angle of incidence on the second GI mirror is at least twice as large as the first angle of incidence. A maximum second scattering angle of the output beam amounts to between 30% and 100% of the second angle of incidence. The two planes of incidence on the two GI mirrors include an angle with respect to one another that is greater than 45.

A catoptric system having a reference axis and including a reflective pattern-source (carrying a substantially one-dimensional pattern) and a combination of only three optical components disposed sequentially to transfer EUV radiation incident the first optical component onto the pattern-source. The combination is disposed in a fixed spatial and optical relationship with respect to the pattern-source, and represents an illumination unit (IU) of a 1D EUV exposure tool that additionally includes a projection optic sub-system configured to form an optical image of the pattern-source on an image plane with the use of only two beams of radiation. These only two beams of radiation originate at the pattern-source from the EUV radiation transferred onto the pattern-source.