Provided is a light illuminating apparatus for irradiating light of a line shape extending in a first direction and having a line width in a second direction. The light illuminating apparatus includes light emitting units, each including a substrate, light sources arranged at an interval along the first direction on the substrate and placed such that a direction of an optical axis is matched to a direction perpendicular to the substrate surface, and optical devices placed on optical paths of each light source to shape light from each light source into light with a predetermined divergence angle, wherein the light emitting units are arranged on an arc having its center at the irradiation position when viewed in the first direction, and an irradiation width in the second direction of light from the light emitting units is approximately equal within a preset range in a direction perpendicular to the irradiation surface.

A beam delivery system may include: beam adjusters configured to adjust a divergence angle of a pulse laser beam; a beam sampler configured to separate a part of the pulse laser beam outputted from a first beam adjuster provided at the most downstream among the beam adjusters to acquire a sample beam; a beam monitor configured to receive the sample beam and output a monitored diameter; and a beam delivery controller configured to control the beam adjusters based on the monitored diameter. The beam delivery controller may adjust each of beam adjusters other than the first beam adjuster selected one after another from the most upstream so that the monitored diameter at the beam monitor becomes a predetermined value specific to the beam adjuster, and adjust the first beam adjuster so that the pulse laser beam becomes focused at a position downstream of a target position.

An illumination optical unit for projection lithography serves for illuminating an object field, in which an object to be imaged can be arranged, with illumination light. The illumination optical unit has a field facet mirror having a plurality of field facets. Furthermore, the illumination optical unit has a pupil facet mirror having a plurality of pupil facets. The field facets are imaged into the object field by a transfer optical unit. The illumination optical unit additionally has a deflection facet mirror having a plurality of deflection facets, which is arranged in the illumination beam path between the field facet mirror and the pupil facet mirror. This results in an illumination optical unit in which the illumination of the object to be imaged can be configured flexibly and can be adapted well to predefined values.

Provided are a mask inspection apparatus and a mask inspection method that can prevent a reduction in a reflectance of a drop-in mirror, which is caused by carbon contaminants. A mask inspection apparatus according to the present invention includes a drop-in mirror including multi-layer film and a reflective surface. The drop-in mirror is configured to reflect illumination light incident on the reflective surface and illuminate the mask. An area of the reflective surface is configured to be greater than an area of an illuminated spot irradiated with the illumination light on the reflective surface. The drop-in mirror is configured to be movable. A position of the illuminated spot on the reflective surface is configured to be moved when the drop-in mirror is moved.

An extreme ultraviolet (EUV) collector inspection apparatus and method capable of precisely inspecting a contamination state of an EUV collector and EUV reflectance in accordance with the contamination state are provided. The EUV collector inspection apparatus includes a light source arranged in front of an EUV collector to be inspected and configured to output light in a visible light (VIS) band from UV rays, an optical device configured to output narrowband light from the light, and a camera configured to perform imaging from an UV band to a VIS band. An image by wavelength of the EUV collector is obtained by using the optical device and the camera and a contamination state of the EUV collector is inspected.

Beam guiding devices for guiding a laser beam, in particular in a direction towards a target region for producing extreme ultraviolet (EUV) radiation, include an adjustment device for adjusting a beam diameter and an aperture angle of the laser beam. The adjustment device includes a first mirror having a first curved reflecting surface, a second mirror having a second curved reflecting surface, a third mirror having a third curved reflecting surface, a fourth mirror having a fourth curved reflecting surface, and a movement device configured to adjust the beam diameter and the aperture angle of the laser beam by moving the first reflecting surface and the fourth reflecting surface relative to one another and, independently thereof, moving the second reflecting surface and the third reflecting surface together relative to the first reflecting surface and the fourth reflecting surface.

A collector transfers EUV illumination light from a radiation source region to illumination optics. Imaging optics of the collector image the radiation source region in a downstream focal region. The imaging optics are embodied so that the radiation source is imaged with at least one first imaging scale by the EUV illumination light, which is emitted with beam angles <20° between the radiation source region and the downstream focal region. The imaging optics are also embodied so that the radiation source is imaged with at least one second imaging scale by the illumination light emitted with beam angles >70°. The two imaging scales for the beam angles <20° on the one hand and >70° on the other hand differ by no more than a factor of 2.5. In addition to a corresponding collector, an illumination system contains field facets transfer optics.

An EUV collector mirror has a reflection surface (16) to reflect usable EUV light which impinges on the reflection surface (16) from a source region (17) to a subsequent EUV optics. The reflection surface (16) carries a pump light grating structure (19) configured to retroreflect pump light (22) which impinges upon the pump light grating structure (19) from the source region (17) back to the source region (17). The pump light (22) has a wavelength deviating from the wavelength of the usable EUV light. Such EUV collector mirror enables a high conversion efficiency between the energy of pump light of a laser discharged produced plasma (LDPP) EUV light source on the one hand and the resulting usable EUV energy on the other.

An extreme ultraviolet light condensation mirror includes a substrate, and a multi-layer reflective film provided on the substrate, formed by alternately stacking an amorphous silicon layer and a layer having a refractive index different from a refractive index of the amorphous silicon layer, and configured to reflect extreme ultraviolet light, a layer on a most surface side in the multi-layer reflective film being the amorphous silicon layer containing a silicon atom bonded with a cyano radical.

A light source module includes: laser light sources; parallel light lenses that converts laser beams from the laser light sources to collimated laser beams; a demagnification optical system including that demagnifies the collimated laser beams; an optical fiber; and a condenser lens that converges and couples the laser beams demagnified by the demagnification optical system with the optical fiber; wherein an Abbe number of each of the parallel light lenses is set to a set value suppressing an output fluctuation from the optical fiber to a predetermined value or less, the set value determined based on: a transverse magnification defined by a focal length of a corresponding one of the parallel light lenses, a demagnification of the demagnification optical system, and a focal length of the condenser lens; and a corresponding one of wavelength shifts of the laser beams generated by the laser light source.