A metasurface optical component including a first substrate, a set of subwavelength structures for forming a metasurface optic and a layer, referred to as an encapsulation layer, that is substantially parallel to the surface of the first substrate, the encapsulation layer being spaced apart from the set of structures by a space referred to as the encapsulated space, the encapsulation layer and the encapsulated space together forming a multilayer antireflective coating in the given wavelength range.

Gallium nitride (GaN) integrated circuit technology with optical communication is described. In an example, an integrated circuit structure includes a layer or substrate having a first region and a second region, the layer or substrate including gallium and nitrogen. A GaN-based device is in or on the first region of the layer or substrate. A CMOS-based device is over the second region of the layer or substrate. An interconnect structure is over the GaN-based device and over the CMOS-based device, the interconnect structure including conductive interconnects and vias in a dielectric layer. A photonics waveguide is over the interconnect structure, the photonics waveguide including silicon, and the photonics waveguide bonded to the dielectric layer of the interconnect structure.

An electro-optic modulator for a waveguide is presented. The electro-optic modulator includes a first semiconductor layer, a second semiconductor layer, a dielectric layer interposed between the second semiconductor layer and the first semiconductor layer and a coupling layer for coupling a guided mode of the waveguide to at least one of the first semiconductor layer and the second semiconductor layer. The electro-optic modulator is configured to induce a modulation on the guided mode of the waveguide by changing a refractive index in response to a voltage applied between the first semiconductor layer and the second semiconductor layer.

An electro-absorption modulator 100 including a quantum well 102 configured to provide a variable electromagnetic absorption spectrum in response to an applied electric field, wherein the quantum well is a type-II quantum well comprising two material layers, each material layer having a graded material composition, such that the potential in each material layer varies as a function of position.

An electro-absorption modulator (EAM) configured to receive light and output a modulated optical signal. The EAM may include a current source used to set a predetermined modulation performance and an output power of the EAM. The current source is set to provide a constant current and constant bias for the electro-absorption modulator, where the EAM automatically self-adjusts to detuning changes between the EAM and the optical light source to maintain a predetermined modulation performance and output power of the EAM.

An optical attenuating structure is provided. The optical attenuating structure includes a substrate, a waveguide, doping regions, an optical attenuating member, and a dielectric layer. The waveguide is extended over the substrate. The doping regions are disposed over the substrate, and include a first doping region, a second doping region opposite to the first doping region and separated from the first doping region by the waveguide, a first electrode extended over the substrate and in the first doping region, and a second electrode extended over the substrate and in the second doping region. The first optical attenuating member is coupled with the waveguide and disposed between the waveguide and the first electrode. The dielectric layer is disposed over the substrate and covers the waveguide, the doping regions and the first optical attenuating member.

An optical frequency comb device includes: an optical waveguide; a first mirror disposed at a first position in the optical waveguide; a second mirror disposed at a second position different from the first position, in the optical waveguide; a gain medium and a saturable absorber which are disposed between the first mirror and the second mirror; and a controller that fixes one of a repetition frequency and a carrier-envelope offset frequency of an optical frequency comb output from an end of the optical waveguide, and changes the other of the repetition frequency and the carrier-envelope offset frequency.

A spatial light modulator and a light detection and ranging (LiDAR) apparatus including the spatial light modulator are provided. The spatial light modulator includes: a first reflective layer; a second reflective layer comprising a plurality of grating structures spaced apart from each other; a resonance layer provided between the first reflective layer and the second reflective layer; and a filling layer having a heat transfer coefficient of about 100 mW/mK or less and being in contact with an upper surface of the resonance layer while surrounding at least one grating structure of the plurality of grating structures.

A semiconductor Mach-Zehnder optical modulator includes input-side lead-out lines, phase modulation electrode lines, and electrodes that apply modulation signals propagating through the phase modulation electrode lines to waveguides, respectively. The semiconductor Mach-Zehnder optical modulator further includes a conductive layer between a substrate and the waveguides, a plurality of first wiring layers connected to the conductive layer, and a second wiring layer that connects an electrode pad and the plurality of first wiring layers.

An LED wall system, with a camera for imaging an area that is illuminated by the LED wall system. The LEDs have a plurality of emitting pixels, each emitting pixel formed of at least one LED, the emitting pixels having primary colors, and also having at least one secondary color other than primary color pixels.