An optical microphone module for installation in a microphone assembly is described. The module is manufactured by assembling a semiconductor chip, a spacer and an interferometric component in a stack with the spacer disposed between the semiconductor chip and the interferometric component. The interferometric component comprises a membrane and a substrate comprising an optical element spaced from the membrane. The semiconductor chip comprises an optoelectronic circuit including at least one photo detector and has a light source mounted thereon or integrated therein. The light source is disposed to provide light to the interferometric arrangement such that two light portions propagate via respective optical paths to create an interference pattern at the photo detector which is dependent on a position of the membrane. The stack comprises an internal cavity and at least one aperture providing a passage for air between the internal cavity and an exterior of the stack, such that the internal cavity is in fluid communication with the exterior of the stack. A first side of the membrane is in fluid communication with the exterior of the stack and a second side of the membrane is in fluid communication with the internal cavity.

An optical modulator carrier assembly includes a optical modulator, a transmission line substrate, a first via, a second via and a wire having an inductor component provided on a second surface of the transmission line substrate, and electrically connecting between the another end of the first via and the another end of the second via. The one end of the first via, the cathode electrode pad, the terminating resistor, the one end of the second via are arranged on the in this order.

An optical modulator carrier assembly includes a optical modulator, a transmission line substrate, a first via, a second via and a wire having an inductor component provided on a second surface of the transmission line substrate, and electrically connecting between the another end of the first via and the another end of the second via. The one end of the first via, the cathode electrode pad, the terminating resistor, the one end of the second via are arranged on the in this order.

A display screen assembly, an electronic device, and an image acquisition method are provided. The display screen assembly includes: a display screen including a first region and a second region; a coupling grating, used to couple and transmit an external light being incident toward the first region to the second region; and an electroluminescent device, used to allow the external light to be incident toward the first region or block the external light from being incident toward the first region.

A display screen assembly, an electronic device, and an image acquisition method are provided. The display screen assembly includes: a display screen including a first region and a second region; a coupling grating, used to couple and transmit an external light being incident toward the first region to the second region; and an electroluminescent device, used to allow the external light to be incident toward the first region or block the external light from being incident toward the first region.

An optical transceiver including a submount, a Mach-Zehnder Modulator (MZM), bonding wires, and a low pass filter type matching network is provided. The MZM includes an input port and an output port and disposed on the submount. The bonding wires are coupled to the submount and the MZM. The low pass filter type matching network is coupled to the bonding wires and is configured to absorb inductance of the bonding wires at a high frequency.

An optical transceiver including a submount, a Mach-Zehnder Modulator (MZM), bonding wires, and a low pass filter type matching network is provided. The MZM includes an input port and an output port and disposed on the submount. The bonding wires are coupled to the submount and the MZM. The low pass filter type matching network is coupled to the bonding wires and is configured to absorb inductance of the bonding wires at a high frequency.

An optical semiconductor chip of the present disclosure includes a high frequency line between an electrode pad receiving a modulation signal and a modulation electrode on the optical waveguide having a light absorption layer. The depletion layer capacitance generated in the light absorption layer is canceled by an inductor component of the high frequency line. When a portion directly below the high frequency line is embedded with a low-dielectric-constant material or is made hollow, the parasitic capacitance is further reduced. The high frequency line may have a zigzag shape as well as a linear shape. The electrode pad on the optical semiconductor chip can be connected to other substrates including RF lines for modulation signal input by bumps or wire bonding.

An electro-optical includes, in part, a multitude of phase modulators each of which includes, in part, a p-type semiconductor region, an n-type semiconductor region, and a χ.sup.(2) insulating dielectric material disposed between the p-type and n-type semiconductor regions. The electro-optical device may be a phased array in which each phase modulator is associated with a different one of the transmitting elements of the phased array. The χ.sup.(2) insulating dielectric material may be an organic polymer. The electro-optical device may further include, in part, a multitude of sensors each associated with a different one of the phase modulators. Each sensor is adapted to receive a phase modulated signal generated by the sensor’s associated phase modulator. The electro-optical device may further include, in part, a multitude of amplitude modulators each associated with a different one of the multitude of phase modulators.

An electro-optical includes, in part, a multitude of phase modulators each of which includes, in part, a p-type semiconductor region, an n-type semiconductor region, and a χ.sup.(2) insulating dielectric material disposed between the p-type and n-type semiconductor regions. The electro-optical device may be a phased array in which each phase modulator is associated with a different one of the transmitting elements of the phased array. The χ.sup.(2) insulating dielectric material may be an organic polymer. The electro-optical device may further include, in part, a multitude of sensors each associated with a different one of the phase modulators. Each sensor is adapted to receive a phase modulated signal generated by the sensor’s associated phase modulator. The electro-optical device may further include, in part, a multitude of amplitude modulators each associated with a different one of the multitude of phase modulators.