A first resistor connected in parallel to a semiconductor optical modulator having first ends, the first resistor and first ends connected to a reference potential. A first end of a first transmission line is connected to second ends of the semiconductor optical modulator and the first resistor. A second transmission line is connected in series to the first transmission line and has an impedance lower than that of the first resistor. A first end of the second transmission line is connected to a second end of the first transmission line. A third transmission line is connected in series to the first and second transmission lines and has an end connected to a second end of the second transmission line, and has an impedance equal to that of the first transmission line. A second resistor and a capacitor are connected in series between the third transmission line and the reference potential.

A first resistor connected in parallel to a semiconductor optical modulator having first ends, the first resistor and first ends connected to a reference potential. A first end of a first transmission line is connected to second ends of the semiconductor optical modulator and the first resistor. A second transmission line is connected in series to the first transmission line and has an impedance lower than that of the first resistor. A first end of the second transmission line is connected to a second end of the first transmission line. A third transmission line is connected in series to the first and second transmission lines and has an end connected to a second end of the second transmission line, and has an impedance equal to that of the first transmission line. A second resistor and a capacitor are connected in series between the third transmission line and the reference potential.

An optical communication device is configured to include: a laser diode that outputs light; an EA modulator including a cathode and an anode, to modulate the light output from the laser diode on the basis of a high-frequency signal applied between the cathode and the anode; a resistor connected between the cathode and the anode; and a pattern line connected in series with the resistor and having an inductance component, in which each of the laser diode and the EA modulator is formed on a front surface of the high-frequency line substrate or a back surface of the high-frequency line substrate, and the pattern line is formed on a side face of the high-frequency line substrate.

The present invention describes a semiconductor interferometric device capable of modulating an electromagnetic wave by modulating the carrier concentration inside a semiconductor device. The variation of the carrier concentration within the device causes the variation of the physical properties inside the semiconductor material leading to a shift of the reflected and absorbed spectrums. One or more rays are generated within the device so as to operate the device through interference effects. The present invention may be utilized for an antenna or for beam steering purposes comprising an array of semiconductor interferometric reflecting devices. Furthermore the same principle could be utilized to generate tunable meta-surfaces, so as to modulate phase, amplitude or polarization of an incident electromagnetic wave.

The present invention describes a semiconductor interferometric device capable of modulating an electromagnetic wave by modulating the carrier concentration inside a semiconductor device. The variation of the carrier concentration within the device causes the variation of the physical properties inside the semiconductor material leading to a shift of the reflected and absorbed spectrums. One or more rays are generated within the device so as to operate the device through interference effects. The present invention may be utilized for an antenna or for beam steering purposes comprising an array of semiconductor interferometric reflecting devices. Furthermore the same principle could be utilized to generate tunable meta-surfaces, so as to modulate phase, amplitude or polarization of an incident electromagnetic wave.

An optoelectronic component including a waveguide, the waveguide comprising an optically active region (OAR), the OAR having an upper and a lower surface; a lower doped region, wherein the lower doped region is located at and/or adjacent to at least a portion of a lower surface of the OAR, and extends laterally outwards from the OAR in a first direction; an upper doped region, wherein the upper doped region is located at and/or adjacent to at least a portion of an upper surface of the OAR, and extends laterally outwards from the OAR in a second direction; and an intrinsic region located between the lower doped region and the upper doped region.

A system for converting digital data into a modulated optical signal, comprises an electrically controllable device having M actuating electrodes. The device provides an optical signal that is modulated in response to binary voltages applied to the actuating electrodes. The system also comprises a digital-to-digital converter that provides a mapping of input data words to binary actuation vectors of M bits and supplies the binary actuation vectors as M bits of binary actuation voltages to the M actuating electrodes, where M is larger than the number of bits in each input data word. The digital-to-digital converter is enabled to map each digital input data word to a binary actuation vector by selecting a binary actuation vector from a subset of binary actuation vectors available to represent each of the input data words.

An optical modulator of an optical transceiver can be calibrated using intermediate frequency (IF) signals to generate accurate crossing point values (e.g., DC bias). A photodiode can measure output from the optical modulator at intermediate and high-speed frequencies to generate crossing point values that avoid crossing point errors. A target crossing point can be selected at any value (e.g., 40%, 50%) and bias values can be generated from IF signals and then stored in a lookup date for setting the modulator bias during operation.

An optical modulator of an optical transceiver can be calibrated using intermediate frequency (IF) signals to generate accurate crossing point values (e.g., DC bias). A photodiode can measure output from the optical modulator at intermediate and high-speed frequencies to generate crossing point values that avoid crossing point errors. A target crossing point can be selected at any value (e.g., 40%, 50%) and bias values can be generated from IF signals and then stored in a lookup date for setting the modulator bias during operation.

The present disclosure is directed to systems for tuning nanocube plasmonic resonators and methods for forming tunable plasmonic resonators. A tunable plasmonic resonator system can include a substrate and a nanostructure positioned on a surface of the substrate. The substrate can include a semiconductor material having a carrier density distribution. A junction can be formed between the nanostructure and the substrate forming a Schottky junction. Changing the carrier density distribution of the semiconductor material can change a plasmonic response of the plasmonic resonator.