An optical device includes a first substrate having a first surface, a second substrate having a second surface, at least one optical waveguide, and a plurality of spacers, disposed on at least either the first surface or the second surface, that include a first portion and a second portion. The first portion of the plurality of elastic spacers is at least one elastic spacer located in a region between the first substrate and the second substrate in which the first substrate and the second substrate overlap each other as seen from an angle parallel with a direction perpendicular to the first surface. The second portion of the plurality of elastic spacers is at least one elastic spacer located in a region in which the first substrate and the second substrate do not overlap each other as seen from an angle parallel with the direction perpendicular to the first surface.

An on-chip optical phased array includes an array of photonic antenna units connected in series by photonic waveguides and arranged in a two-dimensional array to produce complex still and scanning optical patterns through optical interference effect. Each antenna unit includes an output photonic antenna (e.g. grating antenna), and a waveguide phase shifter for adjusting the optical phase of the optical beam output by the antenna unit. The grating antenna and the waveguide phase shifter are formed in the same optical wave guiding layer which includes a core layer between two cladding layers. The grating antennas may be a shallow-etched structure or a deep-etched edge-modulated grating. The optical phased array, including the array of photonic antenna units and the electrodes that connect and provide electrical power to them, can be made on a single chip of silicon using complementary metal-oxide-semiconductor (CMOS) or compatible fabrication processes.

A base device has a first waveguide positioned on a first base. The waveguide is at least partially defined by a ridge extending away from the first base. An auxiliary optical device has a second waveguide positioned on a second base. The second optical device is immobilized on the base device such that the second waveguide is between the first base of the first optical device and the second base of the auxiliary device. The first waveguide is optically aligned with the second waveguide such that the first waveguide and second waveguides can exchange optical signals.

A method of manufacturing an electro-optically active device. The method comprising the steps of: etching a cavity on a silicon-on-insulator wafer; providing a sacrificial layer adjacent to a substrate of a lll-V semiconductor wafer; epitaxially growing an electro-optically active structure on the lll-V semiconductor wafer; etching the epitaxially grown optically active structure into an electro-optically active mesa; disposing the electro-optically active mesa in the cavity of the silicon-on-insulator wafer and bonding a surface of the electro-optically active mesa, which is distal to the sacrificial layer, to a bed of the cavity; and removing the sacrificial layer between the substrate of the lll-V semiconductor wafer and the electro-optically active mesa.

Embodiments include a method and associated apparatuses for phase-shifting an optical signal. The method comprises receiving, at a first end of an optical waveguide formed in a semiconductor layer and extending along a first axis, an optical signal having a first phase. The method further comprises transmitting, at a second end of the optical waveguide opposite the first end, a modified optical signal having a second phase different than the first phase. Transmitting a modified optical signal comprises applying a voltage signal between a first contact region and a second contact region formed in the semiconductor layer apart from the first axis. Applying a voltage signal causes an electrical current to be conducted along a dimension of the optical waveguide. The electrical current causes resistive heating of the optical waveguide and a desired phase shift between the first phase and the second phase.

Embodiments include a method and associated apparatuses for phase-shifting an optical signal. The method comprises receiving, at a first end of an optical waveguide formed in a semiconductor layer and extending along a first axis, an optical signal having a first phase. The method further comprises transmitting, at a second end of the optical waveguide opposite the first end, a modified optical signal having a second phase different than the first phase. Transmitting a modified optical signal comprises applying a voltage signal between a first contact region and a second contact region formed in the semiconductor layer apart from the first axis. Applying a voltage signal causes an electrical current to be conducted along a dimension of the optical waveguide. The electrical current causes resistive heating of the optical waveguide and a desired phase shift between the first phase and the second phase.

When an optical waveguide is formed, an area of an opening of a resist mask is equal to an area of a semiconductor layer for a dummy pattern exposed from the resist mask, and the semiconductor layer for the dummy pattern exposed from the resist mask has a uniform thickness in a region in which the dummy pattern is formed. As a result, an effective pattern density does not change in etching the semiconductor layer for the dummy pattern, and accordingly, it is possible to form a rib-shaped optical waveguide having desired dimensions and a desired shape.

A display device includes: a display panel; a mold frame which supports the display panel, where the mold frame includes a frame body comprises a recessed portion, and a first light-transmit member extending in a first direction and at least partially inserted into the recessed portion; and a joining member which couples the display panel and the mold frame to each other, where the first light-transmit member and the joining member at least partially overlap each other.

According to embodiments of the present invention, an optical device is provided. The optical device includes a channel waveguide, and a plurality of optical elements arranged along at least a portion of the channel waveguide to interact with light propagating in the channel waveguide, wherein a period of the plurality of optical elements changes nonlinearly along the portion of the channel waveguide. According to further embodiments of the present invention, a method for forming an optical device is also provided.

When an optical waveguide is formed, an area of an opening of a resist mask is equal to an area of a semiconductor layer for a dummy pattern exposed from the resist mask, and the semiconductor layer for the dummy pattern exposed from the resist mask has a uniform thickness in a region in which the dummy pattern is formed. As a result, an effective pattern density does not change in etching the semiconductor layer for the dummy pattern, and accordingly, it is possible to form a rib-shaped optical waveguide having desired dimensions and a desired shape.