A sub-pixel unit for a reflective display includes a color filter including a tunable high contrast grating. The tunable high contrast grating reflects light within a first range of wavelengths, and the sub-pixel unit can exist in a first state and a second state, the first state reflecting at least one of (i) light within a different range of wavelengths, and (ii) light of a different intensity level, than the second state.

According to one embodiment, a liquid crystal optical element includes a substrate, a plurality of structures, a first liquid crystal layer including a plurality of liquid crystal molecules having alignment directions fixed, and a second liquid crystal layer including a plurality of liquid crystal molecules having alignment directions fixed. In an area overlapping a groove, a first director of the first liquid crystal layer extends along the groove, and a second director of the second liquid crystal layer is uniformly aligned with the first director of the second surface side, on the third surface side, and turns in planar view.

There is provided a diffractive waveguide device comprising: a light source, at least one light detector, an SBG device comprising a multiplicity of separately switchable SBG elements sandwiched between transparent substrate to which transparent electrodes have been applied. The substrates function as a light guide. Each SBG element encodes image information to be projected on an image surface. Each SBG element when in a diffracting state diffracts light out of the light guide to form an image region on an image surface. The light detector detects light scattered from an object disposed in proximity to the image surface and illuminated by said image region.

This application provides a display panel and a display device. The display panel includes a first substrate, a second substrate, and a duty cycle circuit. The first substrate includes a reflective polarizer, and there is only one reflective polarizer in the display panel.

There is provided an object tracker comprising: a first waveguide; a source of illumination light; a detector optically coupled to said waveguide; and at least one grating lamina formed within said waveguide. Illumination light propagating along a first optical path from said source to an object in relative motion to the object tracker. Image light reflected from at least one surface of an object is deflected by said grating lamina into a second optical path towards said detector.

The multi wavelength laser device includes a laser light source 10 that emits a plurality of laser lights 20 whose fundamental wavelengths differ from one another, a dispersing element 30 that changes the traveling direction of each of the plurality of laser lights according to the wavelength and the incidence direction, and that emits the laser lights in a state in which the laser lights are superposed on the same axis, and a wavelength conversion element 40 that has a plurality of polarization layers disposed therein and having different periods, and that performs wavelength conversion on the fundamental wave laser lights emitted from the dispersing element 30 and placed in the state in which the laser lights are superposed on the same axis, and emits a plurality of laser lights 50 acquired through the wavelength conversion in a state in which the laser lights are superposed on the same axis.

An apparatus, method and system are set forth for detection of fluids using Bragg grating sensors, wherein the Bragg grating sensing element comprises an optical fiber having a Bragg grating inscribed therein characterized by optical properties that are dependent upon the periodicity and effective refractive index of the grating, and a package for subjecting the Bragg grating to a change in strain when contacted by a fluid such that periodicity and effective refractive index of the grating changes, whereby when interrogated with laser light any such change in periodicity and effective refractive index may be detected.

The present disclosure provides a display device, including: a light emitting device and a light adjusting layer, the light adjusting layer being on a light emitting side of the light emitting device, and the light emitting device being configured to generate and emit light having a wavelength in a wavelength range of visible light, wherein the light adjusting layer is configured to block light having a wavelength in a partial wavelength range of blue light from passing through when subjected to an external stimulus and allow the light having the wavelength in the partial wavelength range of blue light to pass through when the external stimulus is removed, and the light adjusting layer includes a responsive photonic crystal.

Processing methods may be performed to forming a pixel material in a semiconductor structure. The methods may include forming a sacrificial hardmask overlying an uppermost layer of an optical stack of the semiconductor structure, the uppermost layer having a thickness. The methods may include forming a via through the sacrificial hardmask in the optical stack by a first etch process unselective to a metal layer of the semiconductor structure. The methods may include filling the via with a fill material, wherein a portion of the fill material extends over the sacrificial hardmask and contacts the metal layer. The methods may include removing a portion of the fill material external to the via by a removal process selective to the fill material. The methods may also include removing the sacrificial hardmask by a second etch process selective to the sacrificial hardmask while maintaining the thickness of the uppermost layer.

Processing methods may be performed to form a pixel isolation structure on a semiconductor substrate. The method may include forming a pixel isolation bilayer on the semiconductor substrate. The pixel isolation bilayer may include a high-k layer overlying a stopping layer. The method may include forming a lithographic mask on a first region of the pixel isolation bilayer. The method may also include etching the pixel isolation bilayer external to the first region. The etching may reveal the semiconductor substrate. The etching may form the pixel isolation structure.