Electrochromic devices with reflective structure and related manufacturing methods are provided. One of the electrochromic devices includes a bottom electrode layer, an electrochromic layer on the bottom electrode layer, an electrolyte layer on the electrochromic layer, a charge storage layer on the electrolyte layer, and a top electrode on the charge storage layer. The transmittance of the electrochromic device changes in response to a voltage applied between the bottom electrode layer and the top electrode layer. One of the bottom and the top electrode layers is a reflective conductive layer, while the other being a transparent conductive layer. This electrochromic device has a simplified structure due to the removal of a separated reflective film, which also results in simplified manufacturing process.

The present application relates to a filter module, a color filter, an image sensor and an imaging device. The filter module includes: a plurality of color filters and a control component. Each of the color filters includes: a first substrate; a metasurface structure located on the first substrate and including a plurality of microstructures periodically arranged; a dielectric layer located on a side of the metasurface structure away from the first substrate and covering the metasurface structure, wherein a refractive index of the dielectric layer is different from a refractive index of the metasurface structure; a second substrate located on a side of the dielectric layer away from the first substrate. The control component is configured to adjust the refractive index of the dielectric layer so as to adjust wavelengths of visible light passing through the color filter.

Thin multilayer reflectors are described. In particular, thin multilayer reflectors that partially transmit blue light and reflect green and red light are described. The thin multilayer reflectors have a uniform left bandedge across each dimension of the film, wherein the location of the left bandedge varies in a range of no more than 10% of the average left bandedge across that dimension.

A semiconductor laser source including a Mach-Zehnder interferometer including first and second arms. Each of these arms being divided into a plurality of consecutive sections. The first and second arms each include a gain-generating section forming first and second gain-generating waveguides, respectively. The laser source includes power sources able to deliver currents through the gain-generating waveguides such that the following condition is met: $\underset{n=1}{\overset{N_2}{.Math.}}{L}_{2,n}{\mathrm{neff}}_{2,n}-\underset{n=1}{\overset{N_1}{.Math.}}{L}_{1,n}{\mathrm{neff}}_{1,n}=k_f{\lambda }_{\mathrm{Si}}$
where: k.sub.f is a preset integer number higher than or equal to 1, N.sub.1 and N.sub.2 are the numbers of sections in the first and second arms, respectively, L.sub.1,n and L.sub.2,n are the lengths of the nth sections of the first and second arms, respectively, neff.sub.1,n and neff.sub.2,n are the effective indices of the nth sections of the first and second arms, respectively.

Provided is a light modulator including a substrate, and a resonator configured to modulate a phase of incident light by modulating a refractive index based on an external stimulus, the resonator comprising a first reflective structure provided on the substrate, a cavity layer provided on the first reflective structure, and a second reflective structure provided on the cavity layer, wherein at least one of the first reflective structure or the second reflective structure comprises first material layers, second material layers that are alternately stacked with the first material layers, and a third material layer, and wherein each of the first material layers has a first refractive index, each of the second material layers has a second refractive index that is different from the first refractive index, and the third material layer has a third refractive index that is different from the first refractive index

A method to configure an optical device. The method may rely on an optical device that includes two parallel mirrors extending, each, parallel to a reference plane, and an active material extending between the mirrors. An average plane of the active material is parallel to said reference plane, so as to form an optical resonator. The active material is energized so as to non-volatilely alter a refractive index and/or an optical absorption in one or more regions of said material. This results in forming one or more cavities, respectively, in which light can be laterally confined, in-plane with said average plane, in addition to being confined between the mirrors, along a direction perpendicular to said reference plane. Each of the one or more cavities has an altered mode profile compared to a non-altered region of the active material. Related methods and optical devices are also disclosed.

A display apparatus includes a light source array in which a plurality of light sources emitting light by a local dimming are arranged, a color conversion layer comprising color conversion particles that convert the emitted light into light of a certain color, and configured to emit white light by using the converted light, a display panel configured to generate an image by using the white light, and a selective transmission member arranged between the light source array and the color conversion layer. The selective transmission member is configured to transmit the light to the color conversion layer, and avoid transmitting the light in the color conversion layer to the light source array.

Electrochromic devices with reflective structure and related manufacturing methods are provided. One of the electrochromic devices includes a bottom electrode layer, an electrochromic layer on the bottom electrode layer, an electrolyte layer on the electrochromic layer, a charge storage layer on the electrolyte layer, and a top electrode on the charge storage layer. The transmittance of the electrochromic device changes in response to a voltage applied between the bottom electrode layer and the top electrode layer. One of the bottom and the top electrode layers is a reflective conductive layer, while the other being a transparent conductive layer. This electrochromic device has a simplified structure due to the removal of a separated reflective film, which also results in simplified manufacturing process.

An optoelectronic semiconductor chip includes a semiconductor body including a first semiconductor region and a second semiconductor region, a recess extending through the first semiconductor region, the recess having a bottom surface, where the second semiconductor region is exposed, and a blocking element arranged on the bottom surface, wherein the at least one recess has a first width and a second width parallel to the main extension plane of the semiconductor body, and the first width is smaller than the second width.

An optoelectronic device includes a silicon substrate, with a silicon waveguide layer disposed over the silicon substrate and including an optical waveguide. One or more through-silicon vias (TSVs) extend through the silicon substrate and contact the silicon waveguide layer. A III-V base layer is disposed over the silicon waveguide layer, and an optical amplifier is disposed on the III-V base layer and optically coupled to the optical waveguide.