A photo mask includes a transparent substrate, a transflective member, and a light shielding member. The transparent substrate has a transflective region including a first region, a second region located in opposing lateral portions of the first region, and an edge region located adjacent to the first and second regions, and a light shielding region surrounding the transflective region. The transflective member is disposed in the first, second and edge regions under the transparent substrate, and has a different light transmittance in each of the first, second and edge regions. The light shielding member is disposed in the light shielding region under the transparent substrate, and defines an opening which exposes the transflective region. The light shielding member includes a long side extending in a first direction parallel to an upper surface of the transparent substrate and a short side extending in a second direction.

A photo mask includes a transparent substrate, a transflective member, and a light shielding member. The transparent substrate has a transflective region including a first region, a second region located in opposing lateral portions of the first region, and an edge region located adjacent to the first and second regions, and a light shielding region surrounding the transflective region. The transflective member is disposed in the first, second and edge regions under the transparent substrate, and has a different light transmittance in each of the first, second and edge regions. The light shielding member is disposed in the light shielding region under the transparent substrate, and defines an opening which exposes the transflective region. The light shielding member includes a long side extending in a first direction parallel to an upper surface of the transparent substrate and a short side extending in a second direction.

A mask blank having a resist layer, which enables charge-up to be suppressed during electron beam irradiation. The mask blank having a resist layer includes a substrate having a thin film, a resist layer formed on a surface of the thin film, and a conductive layer formed on the resist layer. The conductive layer includes a first metal layer containing aluminum as a main component thereof and a second metal layer made of a metal other than aluminum. The first metal layer is formed on the resist layer side of the second metal layer.

A mask blank having a resist layer, which enables charge-up to be suppressed during electron beam irradiation. The mask blank having a resist layer includes a substrate having a thin film, a resist layer formed on a surface of the thin film, and a conductive layer formed on the resist layer. The conductive layer includes a first metal layer containing aluminum as a main component thereof and a second metal layer made of a metal other than aluminum. The first metal layer is formed on the resist layer side of the second metal layer.

A method for protecting a photomask comprises: (i) providing the photomask, (ii) providing a border, (iii) depositing at least two electrical contacts on the border, (iv) mounting a film comprising carbon nanotubes on the border such that the film comprises a free-standing part, wherein after the mounting and depositing steps, the electrical contacts are in contact with the film, (v) inducing a current through the free-standing part of the film by biasing at least one pair of the electrical contacts, and (vi) mounting the border on at least one side of the photomask with the free-standing part of the film above the photomask.

An alignment mark includes an alignment region, a peripheral region and a shielding region. The alignment region has an outer contour; the peripheral region is disposed around at least a part of the outer contour of the alignment region; the shielding region is disposed around at least a part of the outer contour of the alignment region and is non-overlapped with the peripheral region; and the alignment region and the shielding region are opaque, and the peripheral region is at least partially transparent.

An alignment mark includes an alignment region, a peripheral region and a shielding region. The alignment region has an outer contour; the peripheral region is disposed around at least a part of the outer contour of the alignment region; the shielding region is disposed around at least a part of the outer contour of the alignment region and is non-overlapped with the peripheral region; and the alignment region and the shielding region are opaque, and the peripheral region is at least partially transparent.

A substrate with an electrically conductive film for fabricating a reflective mask is obtained that is capable of preventing positional shift of the reflective mask during pattern transfer. Provided is a substrate with an electrically conductive film used in lithography, the substrate with an electrically conductive film having an electrically conductive film formed on one of the main surfaces of a mask blank substrate, and a coefficient of static friction of the surface of the electrically conductive film is not less than 0.25.

A substrate with an electrically conductive film for fabricating a reflective mask is obtained that is capable of preventing positional shift of the reflective mask during pattern transfer. Provided is a substrate with an electrically conductive film used in lithography, the substrate with an electrically conductive film having an electrically conductive film formed on one of the main surfaces of a mask blank substrate, and a coefficient of static friction of the surface of the electrically conductive film is not less than 0.25.

A reflective mask includes a substrate, a light absorbing layer over the substrate, a reflective layer over the light absorbing layer, and an absorption pattern over the reflective layer. The reflective layer covers a first portion of the light absorbing layer, and a second portion of the light absorbing layer is free from coverage by the reflective layer.