The present disclosure relates to a method and apparatus for mitigating printable native defects in an extreme ultra violet (EUV) mask substrate. In some embodiments, the method is performed by identifying a printable native defect within an EUV mask substrate that violates one or more sizing thresholds. A first section of the EUV mask substrate including the printable native defect is removed to form a concavity within the EUV mask substrate. A multi-layer replacement section that is devoid of a printable native defect is inserted into the concavity.

Provided is a reflective mask blank for manufacturing a reflective mask capable of suppressing peeling of an absorber pattern while suppressing an increase in the thickness of an absorber film when EUV exposure is conducted in an atmosphere including hydrogen gas. A reflective mask blank (100) comprises a substrate (1), a multilayer reflection film (2) on the substrate, and an absorber film (4) on the multilayer reflection film. The reflective mask blank (100) is characterized in that: the absorber film (4) includes an absorption layer (42) and a reflectance adjustment layer (44); the absorption layer (42) contains tantalum (Ta), nitrogen (N), and at least one added element selected from hydrogen (H) and deuterium (D); the absorption layer (42) includes a lower surface region (46) including a surface on the substrate side, and an upper surface region (48) including a surface on the side opposite to the substrate; and the concentration (at. %) of the added element in the lower surface region (46) and the concentration (at. %) of the added element in the upper surface region (48) are different.

A reflective mask includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an intermediate layer disposed over the capping layer, an absorber layer disposed over the intermediate layer, and a cover layer disposed over the absorber layer. The intermediate layer includes a material having a lower hydrogen diffusivity than a material of the capping layer.

Provided is a reflective mask blank for manufacturing a reflective mask capable of suppressing peeling of an absorber pattern when EUV exposure is performed in an atmosphere comprising a hydrogen gas.

A reflective mask blank comprises: a substrate; a multilayer reflective film on the substrate; and an absorber film on the multilayer reflective film. The absorber film comprises an absorption layer and a reflectance adjustment layer. The absorption layer comprises tantalum (Ta), boron (B), nitrogen (N), and at least one additive element selected from hydrogen (H) and deuterium (D). A content of the boron (B) in the absorption layer is more than 5 atomic %. A content of the additive element in the absorption layer is 0.1 atomic % or more and 30 atomic % or less.

An extreme ultraviolet (EUV) mask includes a multilayer Mo/Si stack comprising alternating Mo and Si layers disposed over a first major surface of a mask substrate, a capping layer made of ruthenium (Ru) disposed over the multilayer Mo/Si stack, and an absorber layer on the capping layer. The EUV mask includes a circuit pattern area and a particle attractive area, and the capping layer is exposed at bottoms of patterns in the particle attractive area.

An extreme ultraviolet (EUV) mask includes a multilayer Mo/Si stack comprising alternating Mo and Si layers disposed over a first major surface of a mask substrate, a capping layer made of ruthenium (Ru) disposed over the multilayer Mo/Si stack, and an absorber layer on the capping layer. The EUV mask includes a circuit pattern area and a particle attractive area, and the capping layer is exposed at bottoms of patterns in the particle attractive area.

A reflective mask blank for EUVL, includes a substrate; a multilayer reflective film reflecting EUV light; an absorber film absorbing EUV light; and an antireflective film. The multilayer reflective film, the absorber film, and the antireflective film are formed on or above the substrate in this order. The antireflective film includes an aluminum alloy containing aluminum (Al), and at least one metallic element selected from the group consisting of tantalum (Ta), chromium (Cr), titanium (Ti), niobium (Nb), molybdenum (Mo), tungsten (W), and ruthenium (Ru). The aluminum alloy further contains at least one element (X) selected from the group consisting of oxygen (O), nitrogen (N), and boron (B). An aluminum (Al) content of component of the aluminum alloy excluding the element (X) is greater than or equal to 3 at % and less than or equal to 95 at %.

A method of manufacturing a reticle includes depositing an etch stop layer over a substrate; and depositing an absorber layer over the etch stop layer. The method further includes depositing a hard mask layer over the absorber layer, wherein the hard mask layer includes tantalum. The method includes patterning the hard mask layer. The method further includes performing a first etch process to remove a portion of the absorber layer underneath the patterned hard mask. The method includes performing a second etch process to partially remove a portion of a thickness of an etch stop layer underneath the removed portion of the absorber layer, wherein performing the third etch process comprises maintaining a remaining thickness of the etch stop layer underneath the removed portion of the absorber. The method further includes maintaining the remaining thickness of the etch stop layer through a termination of the method of manufacturing the reticle.

A method of manufacturing a reticle includes depositing an etch stop layer over a substrate; and depositing an absorber layer over the etch stop layer. The method further includes depositing a hard mask layer over the absorber layer, wherein the hard mask layer includes tantalum. The method includes patterning the hard mask layer. The method further includes performing a first etch process to remove a portion of the absorber layer underneath the patterned hard mask. The method includes performing a second etch process to partially remove a portion of a thickness of an etch stop layer underneath the removed portion of the absorber layer, wherein performing the third etch process comprises maintaining a remaining thickness of the etch stop layer underneath the removed portion of the absorber. The method further includes maintaining the remaining thickness of the etch stop layer through a termination of the method of manufacturing the reticle.

A method of manufacturing a reticle includes depositing an etch stop layer over a substrate; and depositing an absorber layer over the etch stop layer. The method further includes depositing a hard mask layer over the absorber layer, wherein the hard mask layer includes tantalum. The method includes patterning the hard mask layer. The method further includes performing a first etch process to remove a portion of the absorber layer underneath the patterned hard mask. The method includes performing a second etch process to partially remove a portion of a thickness of an etch stop layer underneath the removed portion of the absorber layer, wherein performing the third etch process comprises maintaining a remaining thickness of the etch stop layer underneath the removed portion of the absorber. The method further includes maintaining the remaining thickness of the etch stop layer through a termination of the method of manufacturing the reticle.