A reflective mask includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an intermediate layer disposed over the capping layer, an absorber layer disposed over the intermediate layer, and a cover layer disposed over the absorber layer. The intermediate layer includes a material having a lower hydrogen diffusivity than a material of the capping layer.

According to an embodiment, a template is provided which includes a template substrate, and a device formation pattern and an alignment mark provided on a common surface of the template substrate. The alignment mark includes a refraction layer provided at a bottom of a first concave pattern provided on the template substrate, and an insulating layer filling the first concave pattern provided with the refraction layer.

According to an embodiment, a template is provided which includes a template substrate, and a device formation pattern and an alignment mark provided on a common surface of the template substrate. The alignment mark includes a refraction layer provided at a bottom of a first concave pattern provided on the template substrate, and an insulating layer filling the first concave pattern provided with the refraction layer.

Various embodiments provide a method for processing a carrier, the method including changing the three-dimensional structure of a mask layer arranged over the carrier so that at least two mask layer regions are formed having different mask layer thicknesses; and applying an ion implantation process to the at least two mask layer regions to form at least two implanted regions in the carrier having different implantation depth profiles.

A UV mask and a fabrication method thereof. The UV mask fabrication method includes: forming a UV shielding layer on a coverage area of a base substrate by using a color filter layer mask plate and a black matrix mask plate; or forming a UV shielding layer on the base substrate by using the color filter layer mask plate. In this way, the cost spent in manufacturing a display device by using a special mask plate (mask) to fabricate the UV mask is reduced.

A UV mask and a fabrication method thereof. The UV mask fabrication method includes: forming a UV shielding layer on a coverage area of a base substrate by using a color filter layer mask plate and a black matrix mask plate; or forming a UV shielding layer on the base substrate by using the color filter layer mask plate. In this way, the cost spent in manufacturing a display device by using a special mask plate (mask) to fabricate the UV mask is reduced.

A chemical amplification resist composition contains: (A) a polymer compound having a structure where a hydrogen atom of a phenolic hydroxyl group is replaced by a group having a non-acid-decomposable polycyclic alicyclic hydrocarbon structure; and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation.

A chemical amplification resist composition contains: (A) a polymer compound having a structure where a hydrogen atom of a phenolic hydroxyl group is replaced by a group having a non-acid-decomposable polycyclic alicyclic hydrocarbon structure; and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation.

Various embodiments provide a method for processing a carrier, the method including changing the three-dimensional structure of a mask layer arranged over the carrier so that at least two mask layer regions are formed having different mask layer thicknesses; and applying an ion implantation process to the at least two mask layer regions to form at least two implanted regions in the carrier having different implantation depth profiles.

An exposure system includes a data processing part that forms an exposure layout and an exposure part that irradiates an electron beam at a photoresist layer according to the exposure layout. The data processing part generates a control parameter for driving the exposure part without a pattern position error and a beam drift error and to prevent a discrepancy between the exposure layout and a mask layout to be formed in the photoresist layer. A controlling part controls the exposure part according to the control parameter.