G03F1/64

Pellicle Frame, Pellicle, Exposure Original Plate with Pellicle, Exposure Method, and Semiconductor or Liquid-Crystal-Display Manufacturing Method
20230061797 · 2023-03-02 · ·

The present invention provides a pellicle frame, a pellicle, an exposure original plate with the pellicle, an exposure method, and a semiconductor or liquid-crystal-display manufacturing method, the pellicle frame constituting a pellicle for photolithography.

PELLICLE FOR AN EUV LITHOGRAPHY MASK AND A METHOD OF MANUFACTURING THEREOF
20230069583 · 2023-03-02 ·

A pellicle for a reflective photo mask includes a frame, a core layer having a front surface and a rear surface, and disposed over the frame, a first capping layer disposed on the front surface of the core layer, an anti-reflection layer disposed on the first capping layer, a barrier layer disposed on the anti-reflection layer, and a heat emissive layer disposed on the barrier layer.

PELLICLE FOR AN EUV LITHOGRAPHY MASK AND A METHOD OF MANUFACTURING THEREOF
20230069583 · 2023-03-02 ·

A pellicle for a reflective photo mask includes a frame, a core layer having a front surface and a rear surface, and disposed over the frame, a first capping layer disposed on the front surface of the core layer, an anti-reflection layer disposed on the first capping layer, a barrier layer disposed on the anti-reflection layer, and a heat emissive layer disposed on the barrier layer.

PELLICLE FOR EXTREME ULTRAVIOLET LITHOGRAPHY CONTAINING MOLYBDENUM CARBIDE

A pellicle for extreme ultraviolet lithography containing molybdenum carbide is disclosed. The pellicle includes a substrate having an opening formed in a central portion, and a pellicle layer formed on the substrate to cover the opening and including a molybdenum carbide containing layer that contains molybdenum carbide expressed as MoC.sub.1-x (0<x<1). The pellicle layer includes a core layer formed on the substrate to cover the opening, and the core layer may be the molybdenum carbide containing layer.

PELLICLE FOR EXTREME ULTRAVIOLET LITHOGRAPHY CONTAINING MOLYBDENUM CARBIDE

A pellicle for extreme ultraviolet lithography containing molybdenum carbide is disclosed. The pellicle includes a substrate having an opening formed in a central portion, and a pellicle layer formed on the substrate to cover the opening and including a molybdenum carbide containing layer that contains molybdenum carbide expressed as MoC.sub.1-x (0<x<1). The pellicle layer includes a core layer formed on the substrate to cover the opening, and the core layer may be the molybdenum carbide containing layer.

PELLICLE FOR EXTREME ULTRAVIOLET LITHOGRAPHY BASED ON YTTRIUM

This application relates to a pellicle for extreme ultraviolet lithography based on yttrium (Y) and used in a lithography process using extreme ultraviolet rays. In one aspect, the pellicle includes a pellicle layer including a core layer formed of an yttrium-based material expressed as Y-M (M is one of B, Si, O, or F).

PELLICLE FOR EXTREME ULTRAVIOLET LITHOGRAPHY BASED ON YTTRIUM

This application relates to a pellicle for extreme ultraviolet lithography based on yttrium (Y) and used in a lithography process using extreme ultraviolet rays. In one aspect, the pellicle includes a pellicle layer including a core layer formed of an yttrium-based material expressed as Y-M (M is one of B, Si, O, or F).

EUV pellicle with structured ventilation frame

A reticle structure includes a reticle having patterned features and a first border section enclosing the patterned features. The reticle structure includes a membrane having a middle section a second border section enclosing the middle section. The reticle structure includes a frame disposed between the membrane and the reticle to mount the membrane over the patterned features of the reticle. The frame creates an enclosure between the reticle and the membrane and encircles the patterned features of the reticle. The frame includes a plurality of holes and the plurality of holes produces a threshold percentage of opening in the frame to maintain an equalized pressure difference between the enclosure and outside the enclosure below a threshold pressure.

EUV pellicle with structured ventilation frame

A reticle structure includes a reticle having patterned features and a first border section enclosing the patterned features. The reticle structure includes a membrane having a middle section a second border section enclosing the middle section. The reticle structure includes a frame disposed between the membrane and the reticle to mount the membrane over the patterned features of the reticle. The frame creates an enclosure between the reticle and the membrane and encircles the patterned features of the reticle. The frame includes a plurality of holes and the plurality of holes produces a threshold percentage of opening in the frame to maintain an equalized pressure difference between the enclosure and outside the enclosure below a threshold pressure.

PELLICLE FOR FLAT PANEL DISPLAY PHOTOMASK
20230161259 · 2023-05-25 ·

A pellicle assembly for large-size photomasks including a frame member configured to be affixed to a large-size photomask substrate, a substantially rigid and transparent pellicle membrane affixed to the frame member so as to protect at least a portion of the large-size photomask substrate from contamination during usage, storage and/or transport, and a coating on at least one of top and bottom surfaces of the pellicle membrane that binds the pellicle membrane to prevent separation of pellicle membrane material in the event of breakage.