A polymer comprising recurring units derived from vinylanthraquinone, recurring units containing a benzene ring having a hydroxyl-bearing tertiary alkyl group bonded thereto, and recurring units derived from hydroxystyrene is provided. The polymer is used as a base resin to formulate a negative resist composition having a high resolution and minimal LER.

A phase shift mask blank includes a transparent substrate, a phase shift layer, a first hard mask layer and an opaque layer. The transparent substrate is disposed on the transparent substrate. The first hard mask layer is disposed on the phase shift layer. The phase shift layer has an etching selectivity with respect to the first hard mask layer. The opaque layer is disposed on the first hard mask layer.

A phase shift mask blank includes a transparent substrate, a phase shift layer, a first hard mask layer and an opaque layer. The transparent substrate is disposed on the transparent substrate. The first hard mask layer is disposed on the phase shift layer. The phase shift layer has an etching selectivity with respect to the first hard mask layer. The opaque layer is disposed on the first hard mask layer.

A method of making a semiconductor device includes defining a pattern including a plurality of sub-patterns on the photomask in the pattern region based on the identifying information. The defining of the pattern includes defining a first sub-pattern of the plurality of sub-patterns having a first spacing from a second sub-pattern of the plurality of sub-patterns, wherein the first spacing is different from a second spacing between the second sub-pattern and a third sub-pattern of the plurality of sub-patterns, or rotating the first sub-pattern about an axis perpendicular to a top surface of the photomask relative to the second sub-pattern.

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

An object of the present invention is to provide a substrate with a multilayer reflective film, which gives a reflective mask achieving high reflectance and exhibiting excellent cleaning resistance. The present invention is directed to a substrate with a multilayer reflective film, which has: a substrate; a multilayer reflective film, formed on the substrate, comprising a layer that includes Si as a high refractive-index material and a layer that include a low refractive-index material, the layers being periodically laminated; a Ru protective film, formed on the multilayer reflective film, for protecting the multilayer reflective film; and a block layer, formed between the multilayer reflective film and the Ru protective film, for preventing the migration of Si to the Ru protective film, wherein the surface layer of the multilayer reflective film opposite from the substrate is the layer comprising Si, and at least part of the Si is diffused into the block layer.

An object of the present invention is to provide a substrate with a multilayer reflective film, which gives a reflective mask achieving high reflectance and exhibiting excellent cleaning resistance. The present invention is directed to a substrate with a multilayer reflective film, which has: a substrate; a multilayer reflective film, formed on the substrate, comprising a layer that includes Si as a high refractive-index material and a layer that include a low refractive-index material, the layers being periodically laminated; a Ru protective film, formed on the multilayer reflective film, for protecting the multilayer reflective film; and a block layer, formed between the multilayer reflective film and the Ru protective film, for preventing the migration of Si to the Ru protective film, wherein the surface layer of the multilayer reflective film opposite from the substrate is the layer comprising Si, and at least part of the Si is diffused into the block layer.

A negative resist composition comprising an onium salt having formula (A) and a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER. ##STR00001##

A negative resist composition comprising an onium salt having formula (A) and a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER. ##STR00001##