A photoresist material, a method of fabricating the same, and a color filter substrate are described. The photoresist material has an oligomer segment having a chemical structural formula of: ##STR00001##
wherein a value of n is 1 to 2.

Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.

It is an object of the present invention to provide a method of forming a high-contrast fine pattern onto a resist film. The present invention relates to a pattern forming method, comprising; applying a resist material onto a substrate to form a resist film, introducing a metal into the resist film, exposing, and developing. In addition, the present invention also relates to a resist material and a pattern forming apparatus.

The present disclosure relates to a patterning structure having a radiation-absorbing layer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the radiation-absorbing layer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.

A method for manufacturing a semiconductor device includes forming a resist layer including a resist composition over a substrate. The resist composition includes: a metal, a ligand, and a solvent. The solvent is mixture of a first solvent having a vapor pressure of at least 0.75 kPa, wherein the first solvent is one or more of an ether, an ester, an alkane, an aldehyde, or a ketone, and a second solvent different from the first solvent. Alternatively, the solvent is a third solvent, wherein the third solvent is a C4-C14 tertiary alcohol. The resist layer is patterned.

Photoresist materials described herein may include various types of tin (Sn) clusters having one or more types of ligands. As an example, a photoresist material described herein may include tin clusters bearing two or more different types of carboxylate ligands. As another example, a photoresist material described herein may include tin oxide clusters that include carbonate ligands. The two or more different types of carboxylate ligands and the carbonate ligands may reduce, minimize, and/or prevent crystallization of the photoresist materials described herein, which may increase the coating performance of the photoresist materials and may decrease the surface roughness of photoresist layers formed using the photoresist materials described herein.

The purification of monoalkyl tin trialkoxides and monoalkyl tin triamides are described using fractional distillation and/or ultrafiltration. The purified compositions are useful as radiation sensitive patterning compositions or precursors thereof. The fractional distillation process has been found to be effective for the removal of metal impurities down to very low levels. The ultrafiltration processes have been found to be effective at removal of fine particulates. Commercially practical processing techniques are described.

The purification of monoalkyl tin trialkoxides and monoalkyl tin triamides are described using fractional distillation and/or ultrafiltration. The purified compositions are useful as radiation sensitive patterning compositions or precursors thereof. The fractional distillation process has been found to be effective for the removal of metal impurities down to very low levels. The ultrafiltration processes have been found to be effective at removal of fine particulates. Commercially practical processing techniques are described.

An organic EL display device including a substrate, and a planarization layer, a first electrode, a pixel division layer, a light emitting pixel and a second electrode formed on the substrate, wherein the planarization layer and/or the pixel division layer contain(s) zirconium nitride particles, and a crystallite size of the zirconium nitride particles determined from a half width of a peak derived from a (111) plane in an X-ray diffraction spectrum using a CuKα ray as an X-ray source is 5 nm or more 20 nm or less. Provided are an organic EL display device with excellent visibility and fewer display defects, and a cured film which is excellent in storage stability of a photosensitive resin composition capable of being applied on an insulating layer of the organic EL display device, and which has high sensitivity and high visible light-shielding property and is also free from residue in the opening.

Provided are a composition with which a cured film having excellent light shielding properties and low reflection properties can be produced; a light shielding film; a solid-state imaging element; an image display device; and a method for manufacturing a cured film.

The composition including carbon black, barium sulfate, one or more kinds selected from the group consisting of copper phthalocyanine and a copper phthalocyanine derivative, a resin, and a solvent, in which the solvent includes a solvent A having a boiling point of 180° C. or higher, a solvent B having a boiling point of 140° C. or higher and lower than 180° C., and a solvent C having a boiling point of 100° C. or higher and lower than 140° C.