Provided is a method of manufacturing a patterned substrate. The method may be applied to a process of manufacturing a device such as an electronic device or integrated circuit, or another use, for example, to manufacture an integrated optical system, a guidance and detection pattern of a magnetic domain memory, a flat panel display, a LCD, a thin film magnetic head or an organic light emitting diode, and used to construct a pattern on a surface to be used to manufacture a discrete tract medium such as an integrated circuit, a bit-patterned medium and/or a magnetic storage device such as a hard drive.

New lactone-containing photoacid generator compounds (“PAGs”) and photoresist compositions that comprise each PAG compounds are provided. These photoresist compositions are useful in the manufacture of electronic device.

A photoresist composition containing (A) a polymer having a structural unit (I) that includes an acid-labile group, and (I) a compound represented by the following formula (1). In the following formula (1), R.sup.1, R.sup.2, R.sup.3 and R represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. X represents a single bond, an oxygen atom or —NR.sup.a—. R.sup.a represents a hydrogen atom, a hydroxy group or a monovalent organic group having 1 to 20 carbon atoms, and optionally taken together represents a ring structure by binding with R each other. A.sup.− represents —SO.sub.3.sup.− or —CO.sub.2.sup.−. M.sup.+ represents a monovalent onium cation. ##STR00001##

A chemically amplified positive resist composition is provided comprising (A) a sulfurane or selenurane compound having formula (A1) wherein M is sulfur or Selenium and (B) a base polymer containing a polymer comprising repeat units having formula (B1). The resist composition exhibits a high resolution during pattern formation and forms a pattern with improved LER and CDU.

##STR00001##

A resist composition is provided comprising a polymer comprising recurring units (a) having a succinimide structure and recurring units (b) containing a group capable of polarity switch with the aid of acid. The resist composition suppresses acid diffusion, exhibits a high resolution, and forms a pattern of satisfactory profile with low edge roughness.

Provided are chemically amplified resist compositions that include acid-labile sulfonate-ester photoresist polymers that are developable in an organic solvent. The chemically amplified resists produce high resolution positive tone development (PTD) and negative tone development (NTD) images depending on the selection of organic development solvent. Furthermore, the dissolution contrast of the traditional chemically amplified resists may be optimized for dual tone imaging through the addition of a photoresist polymer comprising an acid-labile sulfonate-ester moiety.

A salt represented by formula (I): ##STR00001##
wherein R.sup.1 and R.sup.2 independently represent a hydrogen atom, a hydroxy group or a C.sub.1 to C.sub.12 hydrocarbon group in which a methylene group may be replaced by a —O— or —CO—; m and n independently represent 1 or 2; Ar represents an optionally substituted phenyl group; Q.sup.1 and Q.sup.2 independently represent a fluorine atom or a C.sub.1 to C.sub.6 perfluoroalkyl group, A.sup.1 represents a single bond, a C.sub.1 to C.sub.24 alkanediyl group or the like, and Y represents an optionally substituted C.sub.1 to C.sub.18 alkyl group or monovalent C.sub.3 to C.sub.18 alicyclic hydrocarbon group, and a methylene group therein may be replaced by a —O—, O— or —SO.sub.2—, provided that the alkyl group or the alicyclic hydrocarbon group has at least one substituent, or at least one methylene group contained therein is replaced by a —O—, —CO— or —SO.sub.2—.

A fluorinated photopolymer composition is disclosed having a branched copolymer provided in a fluorinated solvent. The copolymer includes a branching unit, a first repeating unit having a fluorine-containing group, and a second repeating unit having a solubility-altering reactive group. The branched fluorinated photopolymer composition is particularly suited for the fabrication of organic electronic and bioelectronic devices, or other devices having sensitive active organic materials.

A photoresist composition includes a radiation-sensitive acid generator, particles, and a first solvent. The radiation-sensitive acid generator is capable of generating an acid upon irradiation with a radioactive ray, an action of the acid allowing a solubility of a film made from the photoresist composition in a developer solution to be altered. The particles include a metal element and have a hydrodynamic radius as determined by a dynamic light scattering analysis of no greater than 20 nm. The photoresist composition may include an acid-labile compound including an acid-labile group. The radiation-sensitive acid generator may be the acid-labile compound including a group that is capable of generating an acid upon exposure to a radioactive ray.

To provide a photosensitive resin composition containing a crosslinkable fluororesin which hardly damages a substrate of e.g. an organic semiconductor when a resin film is formed, and a resin film using it, an organic semiconductor device and its production process, and a fluororesin suitable for the photosensitive resin composition.

A photosensitive resin composition comprising a fluororesin having a polymerizable carbon-carbon double bond and having a fluorine atom content of at least 47 mass %, a crosslinking agent having a polymerizable carbon-carbon double bond (excluding the fluororesin), a photoinitiator and a non-aromatic fluorinated solvent.